公开(公告)号：US20040043596A1

公开(公告)日：2004-03-04

申请号：US10646703

申请日：2003-08-25

Applicant: Kabushiki Kaisha Toshiba

Inventor： Keiichi Sasaki ,  Manabu Kimura ,  Yoshimi Hisatsune ,  Nobuo Hayasaka

IPC: H01L021/44

CPC classification number: H01L21/76898 ,  H01L21/288 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/481 ,  H01L2924/0002 ,  Y10S438/977 ,  H01L2924/00

Abstract: Form a trench in a major surface of a semiconductor substrate, then bury a paste in the trench. The paste contains solids having a conductive substance and a resin, and solvent for dissolving the resin. The solids content of the paste is not less than 60 vol % and a viscosity ratio thereof is not more than 2.

Abstract translation: 在半导体衬底的主表面上形成沟槽，然后在沟槽中埋设糊状物。 糊状物含有具有导电物质和树脂的固体，以及用于溶解树脂的溶剂。 糊剂的固体成分不小于60体积％，粘度比不大于2。

公开(公告)号：US20030181041A1

公开(公告)日：2003-09-25

申请号：US10392967

申请日：2003-03-21

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hiroshi Ikegami ,  Rempei Nakata ,  Takashi Yoda ,  Nobuo Hayasaka ,  Yoshimi Hisatsune

IPC: H01L021/44 ,  H01L023/48 ,  H01L029/40

CPC classification number: H01L23/53238 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02307 ,  H01L21/02315 ,  H01L21/3122 ,  H01L21/76838 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2924/00011 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/19043 ,  H01L2924/30105 ,  Y10S438/959 ,  H01L2924/00 ,  H01L2924/01005 ,  H01L2924/01004 ,  H01L2924/00014

Abstract: There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of CnullH bonds and CnullC bonds, and a total amount of C atoms forming the CnullH bonds and C atoms forming the CnullC bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.

公开(公告)号：US20020050647A1

公开(公告)日：2002-05-02

申请号：US09946601

申请日：2001-09-06

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hiroshi Ikegami ,  Rempei Nakata ,  Takashi Yoda ,  Nobuo Hayasaka ,  Yoshimi Hisatsune

IPC: H01L023/48

CPC classification number: H01L23/53238 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02307 ,  H01L21/02315 ,  H01L21/3122 ,  H01L21/76838 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2924/00011 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/19043 ,  H01L2924/30105 ,  Y10S438/959 ,  H01L2924/00 ,  H01L2924/01005 ,  H01L2924/01004 ,  H01L2924/00014

Abstract: There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of CnullH bonds and CnullC bonds, and a total amount of C atoms forming the CnullH bonds and C atoms forming the CnullC bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.

Abstract translation: 提供一种半导体器件，其包括半导体衬底和在半导体衬底之上的导电层，其中导电层包含铜，导电层的表面区域包含CH键和CC键中的至少一个，并且总量C 形成CH键的原子和在表面区域中形成CC键的C原子在表面区域中的元素的总量为30原子％以上。