公开(公告)号：US20070190235A1

公开(公告)日：2007-08-16

申请号：US11671225

申请日：2007-02-05

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Yoshiaki YAMAMOTO ,  Miki KATAYAMA ,  Kohei YOKOYAMA ,  Rie MATSUBARA ,  Takahiro KAWAKAMI

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Yoshiaki YAMAMOTO ,  Miki KATAYAMA ,  Kohei YOKOYAMA ,  Rie MATSUBARA ,  Takahiro KAWAKAMI

IPC分类号： B05D5/12 ,  B05D5/06 ,  C23C8/00 ,  C23C16/00

CPC分类号： H01L51/001 ,  B05D1/60 ,  B05D5/061 ,  C23C14/24 ,  H01L51/0027

摘要： An object of the present invention is to provide a film forming method for forming a film with reduced defect and to provide a film forming method for forming a film with a uniform quality. In addition, another object is to provide a manufacturing method of a light emitting element which can be driven with low voltage. Further, another object is to provide a manufacturing method of a light emitting element with high light emission efficiency. A film with reduced defect and a uniform quality can be formed by fixing a substrate to a substrate holding unit so that at least a part of a surface of the substrate is exposed, evaporating a vapor deposition material from an evaporation source filled with the vapor deposition material, irradiating the vapor deposition material which is evaporated with a laser beam, and depositing the vapor deposition material on the surface of the substrate.

摘要翻译： 本发明的目的是提供一种用于形成缺陷少的膜的成膜方法，并且提供一种质量均匀的膜形成方法。 此外，另一个目的是提供一种能够以低电压驱动的发光元件的制造方法。 此外，另一个目的是提供一种具有高发光效率的发光元件的制造方法。 可以通过将基板固定到基板保持单元上，使得基板的表面的至少一部分被暴露，从填充有气相沉积的蒸发源蒸发蒸镀材料， 照射用激光束蒸发的蒸镀材料，将该蒸镀材料沉积在基板的表面上。

公开(公告)号：US20090215353A1

公开(公告)日：2009-08-27

申请号：US12367796

申请日：2009-02-09

申请人： Junichiro SAKATA ,  Rie MATSUBARA

发明人： Junichiro SAKATA ,  Rie MATSUBARA

IPC分类号： H01J9/00

CPC分类号： C09K11/612 ,  H05B33/145

摘要： An object is to reduce effects of emission luminance change of the a light emitting body which exhibits blue light emission (a blue-light emitting body) by electric field excitation, that is, a blue-light emitting body which is applicable to an inorganic EL element on the chromaticity coordinates of the light it emits. Further, another object is to improve the repeatability of images displayed on a light emitting device including the inorganic EL element and to realize stable display with the light emitting device which is hardly affected by luminance change. In a method for manufacturing an inorganic EL blue-light emitting body, a sulfide light emitting body, an additive, and a copper compound are mixed and the obtained mixture is baked at 600° C. or more and 1000° C. or less, whereby the sulfide light emitting body can include copper sulfide (CuxS, wherein x is preferably 0.5 to 2.5) as a part of the sulfide light emitting body.

摘要翻译： 本发明的目的是减少通过电场激发发出蓝色发光的发光体（蓝色发光体）的发光亮度变化的影响，即可应用于无机EL的蓝色发光体 元素对其发出的光的色度坐标。 此外，另一个目的是提高显示在包括无机EL元件的发光器件上的图像的重复性，并且使用几乎不受亮度变化影响的发光器件实现稳定的显示。 在制造无机EL蓝光发射体的方法中，混合硫化物发光体，添加剂和铜化合物，将得到的混合物在600℃以上1000℃以下进行烘烤， 由此，作为硫化物发光体的一部分，硫化物发光体可以包括硫化铜（CuxS，其中x优选为0.5〜2.5）。

公开(公告)号：US20070187699A1

公开(公告)日：2007-08-16

申请号：US11671728

申请日：2007-02-06

申请人： Junichiro SAKATA ,  Yoshiaki YAMAMOTO ,  Takahiro KAWAKAMI ,  Kohei YOKOYAMA ,  Miki KATAYAMA ,  Rie MATSUBARA

发明人： Junichiro SAKATA ,  Yoshiaki YAMAMOTO ,  Takahiro KAWAKAMI ,  Kohei YOKOYAMA ,  Miki KATAYAMA ,  Rie MATSUBARA

IPC分类号： H01L33/00

CPC分类号： C09K11/565 ,  C09K11/582 ,  C09K11/584 ,  C09K11/621 ,  H01L33/28 ,  H05B33/14

摘要： A light emitting element is provided, which comprises a pair of electrodes, a p-type semiconductor layer, and an n-type semiconductor layer. The p-type semiconductor layer and the n-type semiconductor layer are interposed between the pair of electrodes. The p-type semiconductor layer includes a first sulfide, and the n-type semiconductor layer includes a second sulfide. At least one of the p-type semiconductor layer and the n-type semiconductor layer includes a light emitting center.

摘要翻译： 提供了一种发光元件，其包括一对电极，p型半导体层和n型半导体层。 p型半导体层和n型半导体层插入在该对电极之间。 p型半导体层包括第一硫化物，n型半导体层包括第二硫化物。 p型半导体层和n型半导体层中的至少一个包括发光中心。

公开(公告)号：US20120319108A1

公开(公告)日：2012-12-20

申请号：US13602393

申请日：2012-09-04

申请人： Junichiro SAKATA ,  Hiromichi GODO ,  Takashi SHIMAZU

发明人： Junichiro SAKATA ,  Hiromichi GODO ,  Takashi SHIMAZU

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/78669 ,  H01L29/78696

摘要： To suppress deterioration in electrical characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the silicon layer is not provided.

摘要翻译： 为了抑制包括氧化物半导体层的晶体管或包括晶体管的半导体器件的电特性的劣化。 在其中使用氧化物半导体形成沟道层的晶体管中，提供与氧化物半导体层的表面接触的硅层。 此外，硅层设置成与至少形成沟道的氧化物半导体层的区域接触，并且提供与氧化物半导体层的区域接触的源电极层和漏电极层， 不提供硅层。

公开(公告)号：US20120300151A1

公开(公告)日：2012-11-29

申请号：US13567327

申请日：2012-08-06

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA ,  Tatsuya TAKAHASHI

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA ,  Tatsuya TAKAHASHI

IPC分类号： H01L27/15 ,  G02F1/136

CPC分类号： H01L27/1225 ,  G02F1/1368 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/45 ,  H01L29/78645

摘要： An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

摘要翻译： 半导体器件的开口率提高。 驱动电路和像素设置在一个基板上，驱动电路中的第一薄膜晶体管和像素中的第二薄膜晶体管均包括栅极电极层，栅电极层上的栅极绝缘层，氧化物 栅极绝缘层上的半导体层，氧化物半导体层上的源极和漏极层以及与栅极绝缘层，氧化物半导体层以及源极和漏极上的部分氧化物半导体层接触的氧化物绝缘层 层。 栅极电极层，栅极绝缘层，氧化物半导体层，源极和漏极电极层以及第二薄膜晶体管的氧化物绝缘层各自具有透光性。

公开(公告)号：US20120286256A1

公开(公告)日：2012-11-15

申请号：US13552899

申请日：2012-07-19

申请人： Yuji IWAKI ,  Junichiro SAKATA ,  Hisao IKEDA ,  Tomoya AOYAMA ,  Takaaki NAGATA ,  Takahiro KAWAKAMI ,  Satoshi SEO ,  Ryoji NOMURA

发明人： Yuji IWAKI ,  Junichiro SAKATA ,  Hisao IKEDA ,  Tomoya AOYAMA ,  Takaaki NAGATA ,  Takahiro KAWAKAMI ,  Satoshi SEO ,  Ryoji NOMURA

IPC分类号： H01L51/54

CPC分类号： H01L51/5048 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/0072 ,  H01L51/0081

摘要： An object of the present invention is to provide a light-emitting element with high luminous efficiency, and a light-emitting element of low-voltage driving. Another object is to provide a light-emitting device with low power consumption by using the light-emitting element. Another object is to provide an electronic appliance with low power consumption by using the light-emitting device in a display portion. A light-emitting element includes, between a pair of electrodes, a layer containing a composite material of a first organic compound and an inorganic compound and a layer containing a second organic compound being in contact with the layer containing the composite material, wherein the second organic compound does not have a peak of an absorption spectrum in a wavelength region of 450 to 800 nm if the second organic compound is compounded with the inorganic compound.

摘要翻译： 本发明的目的是提供一种发光效率高的发光元件和低电压驱动用发光元件。 另一个目的是通过使用发光元件来提供具有低功耗的发光装置。 另一个目的是通过在显示部分中使用发光装置来提供具有低功耗的电子设备。 发光元件在一对电极之间包括含有第一有机化合物和无机化合物的复合材料的层和包含与含有复合材料的层接触的第二有机化合物的层，其中第二 如果第二有机化合物与无机化合物混合，有机化合物在450-800nm的波长区域中不具有吸收光谱的峰值。

公开(公告)号：US20120280225A1

公开(公告)日：2012-11-08

申请号：US13455476

申请日：2012-04-25

申请人： Junichiro SAKATA

发明人： Junichiro SAKATA

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1156 ,  H01L28/40

摘要： An oxide semiconductor is used for a semiconductor layer of a transistor included in a semiconductor device, whereby leakage current between a source and a drain can be reduced, so that reduction in power consumption of a semiconductor device and a memory device including the semiconductor device and an improvement in characteristics of retaining stored data (electric charge) in the semiconductor device and the memory device can be achieved. Further, a drain electrode of the transistor, the semiconductor layer, and a first electrode which overlaps with the drain electrode form a capacitor, and a gate electrode is led to an overlying layer at a position which overlaps with the capacitor. Thus, the semiconductor device and the memory device including the semiconductor device can be miniaturized.

摘要翻译： 氧化物半导体被用于半导体器件中包括的晶体管的半导体层，由此可以减小源极与漏极之间的漏电流，从而降低半导体器件和包括半导体器件和存储器件的存储器件的功耗 可以实现在半导体器件和存储器件中保持存储数据（电荷）的特性的改进。 此外，晶体管的漏电极，半导体层和与漏电极重叠的第一电极形成电容器，并且在与电容器重叠的位置处将栅电极引导到上覆层。 因此，可以使包括半导体器件的半导体器件和存储器件小型化。

公开(公告)号：US20120256179A1

公开(公告)日：2012-10-11

申请号：US13528009

申请日：2012-06-20

申请人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

发明人： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

摘要翻译： 提供具有良好的电特性和高可靠性的晶体管以及包括该晶体管的显示装置。 晶体管是使用用于沟道区的氧化物半导体形成的底栅晶体管。 使用通过热处理进行脱水或脱氢的氧化物半导体层作为活性层。 有源层包括微结晶的浅表部分的第一区域和其余部分的第二区域。 通过使用具有这种结构的氧化物半导体层，可以抑制归因于表层部分的水分进入或从表面部分的氧的消除导致的n型变化，以及寄生通道的产生。 此外，可以减小氧化物半导体层与源极和漏极之间的接触电阻。

公开(公告)号：US20120241812A1

公开(公告)日：2012-09-27

申请号：US13478547

申请日：2012-05-23

申请人： Hisao IKEDA ,  Junichiro SAKATA

发明人： Hisao IKEDA ,  Junichiro SAKATA

IPC分类号： H01L33/40

CPC分类号： H01L51/5088 ,  H01L51/5048

摘要： A light-emitting element is disclosed that can drive at a low driving voltage and that has a longer lifetime than the conventional light-emitting element, and a method is disclosed for manufacturing the light-emitting element. The disclosed light-emitting element includes a plurality of layers between a pair of electrodes; and at least one layer among the plurality of layers contains one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. Such the light-emitting element can suppress the crystallization of a layer containing one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. As a result, a lifetime of the light-emitting element can be extended.

摘要翻译： 公开了一种可以在低驱动电压下驱动并且比常规发光元件具有更长寿命的发光元件，并且公开了一种用于制造发光元件的方法。 所公开的发光元件包括一对电极之间的多个层; 并且所述多个层中的至少一层包含选自氧化物半导体和金属氧化物的一种化合物和具有高空穴传输性的化合物。 这样的发光元件可以抑制含有选自氧化物半导体和金属氧化物的一种化合物的层和具有高空穴传输性的化合物的层的结晶。 结果，可以延长发光元件的寿命。

公开(公告)号：US20110215318A1

公开(公告)日：2011-09-08

申请号：US13104540

申请日：2011-05-10

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Jun KOYAMA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Jun KOYAMA

IPC分类号： H01L33/08 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

摘要： A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.