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公开(公告)号：US06791147B1
公开(公告)日：2004-09-14
申请号：US09431762
申请日：1999-11-01
IPC分类号： H01L2976
CPC分类号： H01L27/11 , H01L21/823892 , H01L27/0928
摘要： A semiconductor memory device has a peripheral circuit area and a memory cell area on a main surface thereof. The semiconductor memory device includes a first well formed in the peripheral circuit area, a second well of a first conductivity type formed in the memory cell area, a third well of a second conductivity type formed in the memory cell area, and a device isolation structure formed in the memory cell area for isolating an element formed in the second well from an element formed in the third well. The second well of the first conductivity type has a depth shallower than a depth of the first well. The third well of the second conductivity type is equal in depth to the second well. The second and third wells are formed down to a level lower than the device isolation structure.
摘要翻译： 半导体存储器件在其主表面上具有外围电路区域和存储单元区域。 半导体存储器件包括形成在外围电路区域中的第一阱，形成在存储单元区域中的第一导电类型的第二阱，形成在存储单元区域中的第二导电类型的第三阱，以及器件隔离结构 形成在用于将形成在第二阱中的元件与形成在第三阱中的元件隔离的存储单元区域中。 第一导电类型的第二阱具有比第一阱的深度浅的深度。 第二导电类型的第三阱与第二阱的深度相等。 第二和第三阱形成为低于器件隔离结构的水平。
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公开(公告)号：US08553543B2
公开(公告)日：2013-10-08
申请号：US12947182
申请日：2010-11-16
CPC分类号： H04L47/2441 , H04L47/2475 , H04L47/50 , H04L47/522 , H04L47/627 , H04L49/254 , H04L49/602
摘要： A packet relay device comprises a distribution processing unit classifying traffics into groups and users based on header information of packets received; a calculation unit calculating available frame rate of each user from peak frame rate, minimum frame rate, and weight information set for each user; a scheduling control unit updating a transmission schedule point-in-time calculated based on the available frame rate of each user, and judging which packet should be transmitted in accordance with the transmission schedule point-in-time updated; and a shaping unit updating a transmission schedule point-in-time calculated based on the peak frame rate of each user, and performing a shaping of packets at the peak frame rate on each user basis in accordance with the transmission schedule point-in-time updated; and a priority-control processing unit performing a strict priority control over transmission of packets of each group in correspondence with degree of priority of each group.
摘要翻译： 分组中继装置包括：分发处理单元，基于接收到的分组的报头信息，将流量分组到组和用户; 计算单元，从针对每个用户的峰值帧速率，最小帧速率和权重信息计算每个用户的可用帧速率; 调度控制单元基于每个用户的可用帧速率来更新计算出的发送调度时间点，并且根据传输调度来更新哪个分组应该被发送; 以及整形单元，其更新基于每个用户的峰值帧速率计算出的传输调度时间点，并且根据传输调度时间点对每个用户基于峰值帧速率对分组进行整形 更新; 以及优先级控制处理单元，对与各组的优先级相对应地对每组的分组的发送执行严格的优先级控制。
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3.发明授权Silicon nitride film forming method, silicon nitride film forming system and silicon nitride film forming system precleaning method 有权氮化硅膜形成方法，氮化硅膜形成系统和氮化硅膜形成系统预清洗方法公开(公告)号：US07156923B2
公开(公告)日：2007-01-02
申请号：US10986282
申请日：2004-11-12
申请人： Hitoshi Kato , Kohei Fukushima , Atsushi Endo , Tatsuo Nishita , Takeshi Kumagai
发明人： Hitoshi Kato , Kohei Fukushima , Atsushi Endo , Tatsuo Nishita , Takeshi Kumagai
IPC分类号： C23C16/00 , C23C16/34 , C23C16/52 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02271 , C23C16/345 , C23C16/4405 , C23C16/4412 , H01L21/0217 , H01L21/3185 , Y10S438/905
摘要： A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).
摘要翻译： 热处理系统（1）包括能够通过六氯二硅烷和氨之间的相互作用在半导体晶片（10）上形成氮化硅膜的反应容器（2）和连接到反应容器（2）的排气管（16）。 反应容器2在500-900℃范围内的温度下被加热，排气管（16）在分解和清洁排气管16之前被加热到100℃。 氨通过工艺气体供给管（13）供给到反应容器（2）中，氨从反应容器（2）排出到排气管（16）中。
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公开(公告)号：US06594186B2
公开(公告)日：2003-07-15
申请号：US10171421
申请日：2002-06-12
IPC分类号： G11C2900
摘要： A semiconductor memory having a plurality of memory cells includes a first terminal that becomes a power supply terminal for the semiconductor memory, a second terminal that becomes a ground terminal for the semiconductor memory, a third terminal for inputting a burn-in mode signal to place the semiconductor memory in a burn-in mode and a fourth terminal for inputting an external clock signal. The semiconductor memory further includes an address signal generation section that generates an address signal for selecting each of the plurality of memory cells based on counting of the clock signal while the burn-in mode signal is input. A data signal generation section generates a data signal based on the clock signal while the burn-in mode signal is input. A data writing section writes data of the data signal in the memory cells selected by the address signal.
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公开(公告)号：US4845578A
公开(公告)日：1989-07-04
申请号：US111553
申请日：1987-10-20
申请人： Takeshi Kumagai
发明人： Takeshi Kumagai
IPC分类号： G11B17/028 , G11B19/20
CPC分类号： G11B17/0282 , G11B19/2009
摘要： A disk driving apparatus is disclosed which, in such apparatus constituted of a disk holding portion on which a hub disposed in the center of a disk is loaded and a motor for supplying the disk holding portion with rotational power, comprises a guide cap which is disposed within the disk holding portion and driven by the motor. The guide cap is provided thereon with a centering peripheral surface, over which the center hole of the hub is to be fitted with virtually no clearance left therebetween, and a taper surface formed in continuance from the centering peripheral surface for guiding the center hole of the hub onto the centering peripheral surface.
摘要翻译： 一种磁盘驱动装置，其特征在于，在装载有设置在盘中心的轮毂的盘保持部和用于向盘保持部供给旋转动力的马达构成的这种装置中， 在盘保持部分内并由电动机驱动。 引导盖设置有定心周边表面，轮毂的中心孔几乎不与其间留有间隙，并且从中心圆周表面连续形成的锥形表面，用于引导中心孔的中心孔 轮毂到定心圆周表面。
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公开(公告)号：US08774001B2
公开(公告)日：2014-07-08
申请号：US13357927
申请日：2012-01-25
申请人： Takeshi Kumagai , Nobuhito Matsuyama , Takeshi Aimoto , Toshio Doi , Kazuo Sugai
发明人： Takeshi Kumagai , Nobuhito Matsuyama , Takeshi Aimoto , Toshio Doi , Kazuo Sugai
IPC分类号： H04L12/26
CPC分类号： H04L47/6275 , H04L47/2441 , H04L47/60 , H04L49/9036
摘要： A relay device of relaying a communication packet is disclosed, which comprises: an input module configured to receive the communication packet as an input; a buffer configured to have a plurality of queues and temporarily accumulated the received communication packet; a sorter configured to sort the received communication packet to one of the plurality of queues, depending on a specific value obtained by a predetermined function that gives an aggregate output from an input which is transfer information regarding transfer of the communication packet; and a band controller configured to control a bandwidth for each of the plurality of queues and output communication packets accumulated in the plurality of queues for transmission of the communication packets. This ensures the quality of service, while saving the capacity of the buffer used for the queues.
摘要翻译： 公开了一种中继通信分组的中继装置，包括：输入模块，用于接收通信分组作为输入; 配置为具有多个队列并临时累积所接收的通信分组的缓冲器; 分拣机，被配置为根据通过给出来自关于通信分组的传送的传输的信息的输入的聚合输出的预定功能获得的特定值，将接收到的通信分组排序到多个队列中的一个队列; 以及频带控制器，被配置为控制所述多个队列中的每一个的带宽，并且输出在所述多个队列中累积的通信分组，以发送所述通信分组。 这确保了服务质量，同时节省了用于队列的缓冲区的容量。
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公开(公告)号：US20120222615A1
公开(公告)日：2012-09-06
申请号：US13221188
申请日：2011-08-30
IPC分类号： C23C16/455
CPC分类号： H01L21/68764 , C23C16/45551 , H01L21/68771
摘要： A film deposition apparatus includes a first turntable including at least ten substrate receiving areas that receive corresponding 300 mm substrates; a first reaction gas supplying portion arranged in a first area inside the chamber to supply a first reaction gas; a second reaction gas supplying portion arranged in a second area away from the first reaction gas supplying portion along the rotation direction of the first turntable to supply a second reaction gas; and a separation area arranged between the first and the second areas. The separation area includes a separation gas supplying portion that supplies a separation gas that separates the first reaction and the second reaction gases, and a ceiling surface having a height so that a pressure in a space between the ceiling surface and the first turntable is higher with the separation gas than pressures in the first and the second areas.
摘要翻译： 一种成膜装置包括：第一转盘，其包括至少十个接收对应的300mm基板的基板接收区域; 第一反应气体供给部，其布置在所述室内的第一区域中，以供应第一反应气体; 第二反应气体供给部，其沿着第一转台的旋转方向配置在远离第一反应气体供给部的第二区域，供给第二反应气体; 以及布置在第一和第二区域之间的分离区域。 分离区域包括供给分离第一反应和第二反应气体的分离气体的分离气体供给部以及具有使顶棚面与第一转台之间的空间内的压力较高的高度的顶面， 分离气体而不是第一和第二区域中的压力。
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8.发明申请FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开薄膜沉积装置，薄膜沉积方法和计算机可读存储介质公开(公告)号：US20110159188A1
公开(公告)日：2011-06-30
申请号：US12972599
申请日：2010-12-20
申请人： Hitoshi Kato , Kohichi Orito , Hiroyuki Kikuchi , Muneyuki Otani , Takeshi Kumagai , Kensaku Narushima , Takashi Nishimori
发明人： Hitoshi Kato , Kohichi Orito , Hiroyuki Kikuchi , Muneyuki Otani , Takeshi Kumagai , Kensaku Narushima , Takashi Nishimori
CPC分类号： C23C16/4584 , C23C16/34 , C23C16/4412 , C23C16/45519 , C23C16/45523 , C23C16/45591 , C23C16/4585 , C23C16/50 , C23C16/52 , H01L21/28556 , H01L21/76843
摘要： A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product.
摘要翻译： 当沉积氮化钛膜时，成膜装置以100rpm或更高的旋转速度使转台和每个气体喷嘴彼此相对旋转，以加速反应气体供应循环或反应产物的成膜循环。 在已经产生的反应产物的晶粒尺寸由于已经产生的反应产物的结晶开始生长之后，沉积下一个反应产物的膜。
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公开(公告)号：US07855960B2
公开(公告)日：2010-12-21
申请号：US12323578
申请日：2008-11-26
CPC分类号： H04L47/2441 , H04L47/2475 , H04L47/50 , H04L47/522 , H04L47/627 , H04L49/254 , H04L49/602
摘要： A packet relay device comprises a distribution processing unit classifying traffics into groups and users based on header information of packets received; a calculation unit calculating available frame rate of each user from peak frame rate, minimum frame rate, and weight information set for each user; a scheduling control unit updating a transmission schedule point-in-time calculated based on the available frame rate of each user, and judging which packet should be transmitted in accordance with the transmission schedule point-in-time updated; and a shaping unit updating a transmission schedule point-in-time calculated based on the peak frame rate of each user, and performing a shaping of packets at the peak frame rate on each user basis in accordance with the transmission schedule point-in-time updated; and a priority-control processing unit performing a strict priority control over transmission of packets of each group in correspondence with degree of priority of each group.
摘要翻译： 分组中继装置包括：分发处理单元，基于接收到的分组的报头信息，将流量分组到组和用户; 计算单元，从针对每个用户的峰值帧速率，最小帧速率和权重信息计算每个用户的可用帧速率; 调度控制单元基于每个用户的可用帧速率来更新计算出的发送调度时间点，并且根据传输调度来更新哪个分组应该被发送; 以及整形单元，其更新基于每个用户的峰值帧速率计算出的发送调度时间点，并且按照每个用户的时间点按照发送调度时间点以峰值帧速率对分组进行整形 更新; 以及优先级控制处理单元，对与各组的优先级相对应地对每组的分组的发送执行严格的优先级控制。
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10.发明授权公开(公告)号：US06844273B2
公开(公告)日：2005-01-18
申请号：US10066627
申请日：2002-02-06
申请人： Hitoshi Kato , Kohei Fukushima , Atsushi Endo , Tatsuo Nishita , Takeshi Kumagai
发明人： Hitoshi Kato , Kohei Fukushima , Atsushi Endo , Tatsuo Nishita , Takeshi Kumagai
IPC分类号： C23C16/34 , C23C16/44 , H01L21/318 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02271 , C23C16/345 , C23C16/4405 , C23C16/4412 , H01L21/0217 , H01L21/3185 , Y10S438/905
摘要： A thermal processing system (1) includes a reaction vessel (2) capable of forming a silicon nitride film on semiconductor wafers (10) through interaction between hexachlorodisilane and ammonia, and an exhaust pipe (16) connected to the reaction vessel (2). The reaction vessel 2 is heated at a temperature in the range of 500 to 900° C. and the exhaust pipe (16) is heated at 100° C. before disassembling and cleaning the exhaust pipe 16. Ammonia is supplied through a process gas supply pipe (13) into the reaction vessel (2), and the ammonia is discharged from the reaction vessel (2) into the exhaust pipe (16).
摘要翻译： 热处理系统（1）包括能够通过六氯二硅烷和氨之间的相互作用在半导体晶片（10）上形成氮化硅膜的反应容器（2）和连接到反应容器（2）的排气管（16）。 将反应容器2在500-900℃的温度范围内加热，并且排气管（16）在100℃下被加热，然后拆卸和清洁排气管16.氨通过工艺气体供应 管（13）进入反应容器（2），氨从反应容器（2）排出到排气管（16）中。
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