Resist composition and method of forming resist pattern
    1.
    发明授权
    Resist composition and method of forming resist pattern 有权
    抗蚀剂图案的抗蚀剂组成和方法

    公开(公告)号:US08034536B2

    公开(公告)日:2011-10-11

    申请号:US12453857

    申请日:2009-05-26

    IPC分类号: G03F7/004 G03F7/30

    摘要: A novel resist composition and method of forming a resist pattern that can be used in lithography applications. The resist composition includes a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a polymer compound (A1) having a structural unit (a0) represented by general formula (a0-1) shown below, wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms, R2 and R3 each independently represents a hydrogen atom or an alkyl group that may include an oxygen atom at an arbitrary position, or R2 and R3 are bonded together to form an alkylene group, and W represents a cyclic alkylene group that may include an oxygen atom at an arbitrary position.

    摘要翻译: 形成可用于光刻应用的抗蚀剂图案的新型抗蚀剂组合物和方法。 抗蚀剂组合物包括在酸的作用下在碱性显影液中显示改变的溶解性的基础组分(A)和暴露时产生酸的酸产生剂组分(B),其中所述碱性组分(A)含有高分子化合物 A1)具有下述通式(a0-1)表示的结构单元(a0),其中R1表示氢原子,1〜5个碳原子的烷基或1〜5个碳原子的氟化烷基,R2 和R 3各自独立地表示氢原子或可以在任意位置含有氧原子的烷基,或者R 2和R 3结合在一起形成亚烷基,W表示可以包含氧原子的环状亚烷基 任意的位置

    Resist composition and method of forming resist pattern
    2.
    发明申请
    Resist composition and method of forming resist pattern 有权
    抗蚀剂图案的抗蚀剂组成和方法

    公开(公告)号:US20090297980A1

    公开(公告)日:2009-12-03

    申请号:US12453857

    申请日:2009-05-26

    IPC分类号: G03F7/20 G03F7/004

    摘要: A novel resist composition and method of forming a resist pattern that can be used in lithography applications. The resist composition includes a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a polymer compound (A1) having a structural unit (a0) represented by general formula (a0-1) shown below, wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms, R2 and R3 each independently represents a hydrogen atom or an alkyl group that may include an oxygen atom at an arbitrary position, or R2 and R3 are bonded together to form an alkylene group, and W represents a cyclic alkylene group that may include an oxygen atom at an arbitrary position.

    摘要翻译: 形成可用于光刻应用的抗蚀剂图案的新型抗蚀剂组合物和方法。 抗蚀剂组合物包括在酸的作用下在碱性显影液中显示改变的溶解性的基础组分(A)和暴露时产生酸的酸产生剂组分(B),其中所述碱性组分(A)含有高分子化合物 A1)具有下述通式(a0-1)表示的结构单元(a0),其中R1表示氢原子,1〜5个碳原子的烷基或1〜5个碳原子的氟化烷基,R2 和R 3各自独立地表示氢原子或可以在任意位置含有氧原子的烷基,或者R 2和R 3结合在一起形成亚烷基,W表示可以包含氧原子的环状亚烷基 任意的位置

    RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD FOR RESIST PATTERN FORMATION
    3.
    发明申请
    RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD FOR RESIST PATTERN FORMATION 审中-公开
    耐久性暴露的耐腐蚀组合物和耐蚀模式的形成方法

    公开(公告)号:US20100028799A1

    公开(公告)日:2010-02-04

    申请号:US11721957

    申请日:2005-12-01

    IPC分类号: G03F7/20 G03F7/004

    摘要: A resist composition for immersion exposure including a resin component (A) that exhibits changed alkali solubility under the action of acid, wherein the resin component (A) includes a polymer compound (A1) containing a structural unit (a0) having an acid-generating group that generates acid upon irradiation.

    摘要翻译: 1.一种浸渍曝光用抗蚀剂组合物,其含有在酸作用下表现出碱溶解性变差的树脂成分(A),其中,所述树脂成分(A)含有含有产生酸的结构单元(a0)的高分子化合物(A1) 在照射时产生酸的组。

    Pattern-forming method, metal oxide film-forming material and method for using the metal oxide film-forming material
    5.
    发明授权
    Pattern-forming method, metal oxide film-forming material and method for using the metal oxide film-forming material 有权
    图案形成方法,金属氧化物成膜材料和使用金属氧化物成膜材料的方法

    公开(公告)号:US08349543B2

    公开(公告)日:2013-01-08

    申请号:US12373714

    申请日:2007-06-18

    IPC分类号: G03F7/26 C09D5/00

    摘要: A pattern-forming method, including: forming a first resist film by applying a first chemically amplified resist composition onto a support, forming a plurality of resist patterns by selectively exposing and then developing the first resist film, forming a plurality of coated patterns by forming a coating film composed of a metal oxide film on the surface of each resist pattern, forming a second resist film by applying a second chemically amplified resist composition onto the support having the coated patterns formed thereon, and selectively exposing and then developing the second resist film, thereby forming a pattern composed of the plurality of coated patterns and a resist pattern formed in the second resist film onto the support.

    摘要翻译: 一种图案形成方法,包括:通过将第一化学放大抗蚀剂组合物施加到载体上来形成第一抗蚀剂膜,通过选择性地暴露然后显影第一抗蚀剂膜形成多个抗蚀剂图案,通过形成 在每个抗蚀剂图案的表面上由金属氧化物膜构成的涂膜,通过将第二化学放大型抗蚀剂组合物施加到其上形成有涂覆图案的载体上形成第二抗蚀剂膜,并选择性地暴露然后显影第二抗蚀剂膜 从而形成由多个涂布图案构成的图案和形成在第二抗蚀剂膜上的抗蚀剂图案到支撑体上。

    FILM-FORMING MATERIAL AND METHOD OF FORMING PATTERN
    8.
    发明申请
    FILM-FORMING MATERIAL AND METHOD OF FORMING PATTERN 有权
    成膜材料和形成图案的方法

    公开(公告)号:US20090134119A1

    公开(公告)日:2009-05-28

    申请号:US11997300

    申请日:2006-08-24

    IPC分类号: C23F1/02

    摘要: A film-forming material that is capable of forming, at a low temperature, a film having a high degree of etching resistance and a high etching selectivity ratio relative to an organic film, as well as a method of forming a pattern that uses the film-forming material. The film-forming material includes a metal compound (W) capable of generating a hydroxyl group upon hydrolysis, and a solvent (S) in which the metal compound is dissolved, wherein the solvent (S) includes a solvent (S1) with a boiling point of at least 155° C. that contains no functional groups that react with the metal compound (W). The method of forming a pattern includes the steps of: coating a pattern, which has been formed on top of an organic film of a laminate that includes a substrate and the organic film, using the above film-forming material, and then conducting etching of the organic film using the pattern as a mask.

    摘要翻译: 能够在低温下形成相对于有机膜具有高耐蚀刻性和高蚀刻选择比的膜的成膜材料以及形成使用该膜的图案的方法 形成材料。 成膜材料包括水解时能够产生羟基的金属化合物(W)和其中溶解有金属化合物的溶剂(S),其中溶剂(S)包括沸腾的溶剂(S1) 至少155℃,不含与金属化合物(W)反应的官能团。 形成图案的方法包括以下步骤:使用上述成膜材料涂覆已经形成在包括基材和有机膜的层压体的有机膜的顶部上的图案,然后进行蚀刻 使用该图案作为掩模的有机膜。

    Compound, dissolution inhibitor, positive type resist composition, and method of forming resist pattern
    9.
    发明授权
    Compound, dissolution inhibitor, positive type resist composition, and method of forming resist pattern 失效
    化合物,溶解抑制剂,正型抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号:US08304163B2

    公开(公告)日:2012-11-06

    申请号:US12980914

    申请日:2010-12-29

    IPC分类号: G03F7/004

    摘要: A positive type resist composition for forming a high resolution resist pattern and a method of forming a resist pattern are provided which use a low-molecular-weight material as a base component, and a compound and a dissolution inhibitor that are each suitable for the positive type resist composition. Here, the compound is a non-polymer having a molecular weight of 500 to 3000, and is decomposed under the action of an acid to produce two or more molecules of a decomposition product having a molecular weight of 200 or more; the dissolution inhibitor comprises the compound; the positive type resist composition comprises the compound and the acid generator component; and the method of forming a resist pattern uses the positive type resist composition.

    摘要翻译: 提供了用于形成高分辨抗蚀剂图案的正型抗蚀剂组合物和形成抗蚀剂图案的方法,其使用低分子量材料作为基础组分,并且化合物和溶解抑制剂各自适用于阳性 型抗蚀剂组合物。 这里,该化合物是分子量为500〜3000的非聚合物,在酸的作用下分解,生成分子量为200以上的分解产物的2个以上分子; 该溶解抑制剂包含该化合物; 正型抗蚀剂组合物包含化合物和酸产生剂组分; 并且形成抗蚀剂图案的方法使用正型抗蚀剂组合物。