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    Resist composition and method of forming resist pattern
    1.
    发明授权
    Resist composition and method of forming resist pattern 有权
    抗蚀剂图案的抗蚀剂组成和方法

    公开(公告)号：US09005872B2

    公开(公告)日：2015-04-14

    申请号：US13398555

    申请日：2012-02-16

    Applicant: Hiroaki Shimizu ,  Sho Abe ,  Hideto Nito

    Inventor： Hiroaki Shimizu ,  Sho Abe ,  Hideto Nito

    IPC: G03F7/004 ,  G03F7/30 ,  C07C51/02 ,  C07C303/32 ,  C07C309/06 ,  C07C309/12 ,  C07C309/19 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/32

    CPC classification number: G03F7/0045 ,  G03F7/0046 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/325 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/123

    Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, a basic-compound component (C) and an acid-generator component (B) which generates acid upon exposure, the component (B) including a compound represented by formula (b1), and the component (C) including at least one compound represented by formulas (c1) to (c3) (wherein Z1 represents a ring skeleton-containing hydrocarbon group, Q1 represents a divalent linking group containing oxygen, Y1 represents a fluorinated alkylene group, M+ represents an organic cation, R1 represents a fluorinated alkyl group or a hydrocarbon group, L1+ and L2+ represents a sulfonium or an iodonium, Z2 represents a hydrogen atom or a hydrocarbon group, Y2 represents a single bond or a divalent linking group containing no fluorine, R2 represents an organic group, Y3 represents an alkylene group or an arylene group; and Rf represents a fluorine-containing hydrocarbon group).

    Abstract translation: 一种抗蚀剂组合物，其包含在酸作用下在显影液中溶解度变化的碱成分（A），暴露时产生酸的碱性化合物成分（C）和酸发生剂成分（B），成分（B ）和包含式（c1）〜（c3）所示的至少一种化合物的组分（C）（其中Z1表示含环骨架的烃基，Q1表示二价连接基团 含有氧的基团，Y 1表示氟化亚烷基，M +表示有机阳离子，R1表示氟代烷基或烃基，L1 +，L2 +表示锍或碘，Z2表示氢原子或烃基，Y2表示 单键或不含氟的二价连接基团，R 2表示有机基团，Y 3表示亚烷基或亚芳基，Rf表示含氟烃基）。

    Method of forming resist pattern
    3.
    发明授权
    Method of forming resist pattern 失效
    形成抗蚀剂图案的方法

    公开(公告)号：US08236483B2

    公开(公告)日：2012-08-07

    申请号：US12533685

    申请日：2009-07-31

    Applicant: Tomoyuki Ando ,  Sho Abe ,  Ryoji Watanabe ,  Komei Hirahara

    Inventor： Tomoyuki Ando ,  Sho Abe ,  Ryoji Watanabe ,  Komei Hirahara

    IPC: G03F7/26

    CPC classification number: G03F7/2022 ,  G03F7/095

    Abstract: A method of forming a resist pattern including: forming a resist film on a substrate using a chemically amplified negative resist composition; forming a latent image of a first line and space pattern by subjecting the resist film to first exposure through a photomask; forming a latent image of a second line and space pattern so as to intersect with the latent image of the first line and space pattern by subjecting the resist film to second exposure through a photomask; and subjecting the resist film to developing to form a hole pattern in the resist film.

    Abstract translation: 一种形成抗蚀剂图案的方法，包括：使用化学放大的负性抗蚀剂组合物在基板上形成抗蚀剂膜; 通过使抗蚀剂膜首先通过光掩模曝光来形成第一线和空间图案的潜像; 通过使光刻胶膜通过光掩模进行第二曝光，形成与第一线和空间图案的潜像相交的第二线和空间图案的潜像; 并且使抗蚀剂膜显影以在抗蚀剂膜中形成孔图案。

    Negative resist composition for immersion exposure and method of forming resist pattern
    4.
    发明授权
    Negative resist composition for immersion exposure and method of forming resist pattern 失效
    用于浸渍曝光的负型抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号：US08039199B2

    公开(公告)日：2011-10-18

    申请号：US12453152

    申请日：2009-04-30

    Applicant: Sho Abe

    Inventor： Sho Abe

    IPC: G03F7/004 ,  G03F7/30

    CPC classification number: G03F7/038 ,  G03F7/0046 ,  G03F7/2041 ,  Y10S430/108 ,  Y10S430/111

    Abstract: A negative resist composition for immersion exposure including a fluorine-containing polymeric compound (F) containing a structural unit having a base dissociable group, an alkali-soluble resin component (A) excluding the fluorine-containing polymeric compound (F), an acid generator component (B) that generates acid upon exposure, and a cross-linking component (C); and a method of forming a resist pattern including applying the negative resist composition for immersion exposure to a substrate to form a resist film, subjecting the resist film to immersion exposure, and subjecting the resist film to alkali developing to form a resist pattern.

    Abstract translation: 一种用于浸渍曝光的负型抗蚀剂组合物，包括含有具有碱解离基团的结构单元的含氟聚合物（F），不含氟聚合物（F）的碱溶性树脂组分（A），酸产生剂 暴露时产生酸的组分（B）和交联组分（C）; 以及形成抗蚀剂图案的方法，包括将用于浸渍曝光的负性抗蚀剂组合物施加到基底以形成抗蚀剂膜，对抗蚀剂膜进行浸没曝光，以及对抗蚀剂膜进行碱显影以形成抗蚀剂图案。

    POLYMER COMPOUND, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
    5.
    发明申请
    POLYMER COMPOUND, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
    聚合物化合物，耐蚀组合物和形成耐力图案的方法

    公开(公告)号：US20100081080A1

    公开(公告)日：2010-04-01

    申请号：US12449547

    申请日：2008-02-06

    Applicant: Jun Iwashita ,  Sho Abe ,  Makiko Irie ,  Takeshi Iwai

    Inventor： Jun Iwashita ,  Sho Abe ,  Makiko Irie ,  Takeshi Iwai

    IPC: G03F7/20 ,  C08F32/08 ,  C08F24/00 ,  G03F7/004

    CPC classification number: C08F220/28 ,  C08F220/34 ,  C08F220/38 ,  G03F7/0382 ,  G03F7/0397 ,  Y10S430/111

    Abstract: A polymer compound including a structural unit (a0) represented by general formula (a0-1) shown below: wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms; R2 and R3 each independently represents a hydrogen atom, an alkyl group or an alkoxy group, or R2 and R3 may be bonded together to form an alkylene group that may include an oxygen atom or sulfur atom at an arbitrary position, —O— or —S—; R4 and R5 each independently represents a hydrogen atom, an alkyl group that may include an oxygen atom at an arbitrary position, a cycloalkyl group that may include an oxygen atom at an arbitrary position or an alkoxycarbonyl group.

    Abstract translation: 包含如下所示的由通式（a0-1）表示的结构单元（a0）的高分子化合物：其中R1表示氢原子，1〜5个碳原子的烷基或1〜5个碳原子的氟化烷基; R 2和R 3各自独立地表示氢原子，烷基或烷氧基，或者R 2和R 3可以键合在一起形成任意位置上可以包含氧原子或硫原子的亚烷基，-O-或 - S- R 4和R 5各自独立地表示氢原子，可以包含任意位置的氧原子的烷基，可以包含任意位置的氧原子的环烷基或烷氧基羰基。

    METHOD OF FORMING RESIST PATTERN AND NEGATIVE RESIST COMPOSITION
    7.
    发明申请
    METHOD OF FORMING RESIST PATTERN AND NEGATIVE RESIST COMPOSITION 有权
    形成电阻图案和负极电阻组合物的方法

    公开(公告)号：US20090191478A1

    公开(公告)日：2009-07-30

    申请号：US12438906

    申请日：2007-10-19

    Applicant: Ken Tanaka ,  Sho Abe ,  Shigeru Yokoi

    Inventor： Ken Tanaka ,  Sho Abe ,  Shigeru Yokoi

    IPC: G03F7/20 ,  G03F7/004

    CPC classification number: G03F7/0035 ,  G03F7/0048 ,  G03F7/0382 ,  G03F7/0397 ,  H01L21/0271 ,  H01L21/3086 ,  H01L21/3088

    Abstract: A novel method of forming a resist pattern in which thickness loss from the resist pattern is reduced, and a negative resist composition that can be used in this method of forming a resist pattern. The method of forming a resist pattern includes: forming a first resist film by applying a first resist composition to a support, forming a first resist pattern by selectively exposing the first resist film through a first mask pattern and then developing the first resist film, forming a second resist film by applying a negative resist composition containing an ether-based organic solvent (S″) having no hydroxyl groups onto the support having the first resist pattern formed thereon, and forming a resist pattern by selectively exposing the second resist film through a second mask pattern and then developing the second resist film.

    Abstract translation: 形成抗蚀剂图案的厚度损失降低的抗蚀剂图案的新颖方法以及可用于形成抗蚀剂图案的方法中的负型抗蚀剂组合物。 形成抗蚀剂图案的方法包括：通过将第一抗蚀剂组合物施加到载体上来形成第一抗蚀剂膜，通过选择性地将第一抗蚀剂膜通过第一掩模图案曝光，然后显影第一抗蚀剂膜，形成第一抗蚀剂图案，形成第一抗蚀剂图案 通过将不含羟基的醚类有机溶剂（S“）的负性抗蚀剂组合物涂布在其上形成有第一抗蚀剂图案的载体上，形成第二抗蚀剂膜，并通过选择性地使第二抗蚀剂膜通过 第二掩模图案，然后显影第二抗蚀剂膜。

    Method of forming resist pattern and negative resist composition
    8.
    发明授权
    Method of forming resist pattern and negative resist composition 有权
    形成抗蚀剂图案和负性抗蚀剂组合物的方法

    公开(公告)号：US08859187B2

    公开(公告)日：2014-10-14

    申请号：US12438906

    申请日：2007-10-19

    Applicant: Ken Tanaka ,  Sho Abe ,  Shigeru Yokoi

    Inventor： Ken Tanaka ,  Sho Abe ,  Shigeru Yokoi

    IPC: G03F7/095 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30

    CPC classification number: G03F7/0035 ,  G03F7/0048 ,  G03F7/0382 ,  G03F7/0397 ,  H01L21/0271 ,  H01L21/3086 ,  H01L21/3088

    Abstract: A novel method of forming a resist pattern in which thickness loss from the resist pattern is reduced, and a negative resist composition that can be used in this method of forming a resist pattern. The method of forming a resist pattern includes: forming a first resist film by applying a first resist composition to a support, forming a first resist pattern by selectively exposing the first resist film through a first mask pattern and then developing the first resist film, forming a second resist film by applying a negative resist composition containing an ether-based organic solvent (S″) having no hydroxyl groups onto the support having the first resist pattern formed thereon, and forming a resist pattern by selectively exposing the second resist film through a second mask pattern and then developing the second resist film.

    Abstract translation: 形成抗蚀剂图案的厚度损失降低的抗蚀剂图案的新颖方法以及可用于形成抗蚀剂图案的方法中的负型抗蚀剂组合物。 形成抗蚀剂图案的方法包括：通过将第一抗蚀剂组合物施加到载体上来形成第一抗蚀剂膜，通过选择性地将第一抗蚀剂膜通过第一掩模图案曝光，然后显影第一抗蚀剂膜，形成第一抗蚀剂图案，形成第一抗蚀剂图案 通过在其上形成有第一抗蚀剂图案的载体上涂布含有无羟基的醚类有机溶剂（S“）的负性抗蚀剂组合物，形成第二抗蚀剂膜，并通过选择性地将第二抗蚀剂膜曝光 第二掩模图案，然后显影第二抗蚀剂膜。

    Resist composition and method of forming resist pattern
    9.
    发明授权
    Resist composition and method of forming resist pattern 有权
    抗蚀剂图案的抗蚀剂组成和方法

    公开(公告)号：US08034536B2

    公开(公告)日：2011-10-11

    申请号：US12453857

    申请日：2009-05-26

    Applicant: Jun Iwashita ,  Shogo Matsumaru ,  Sho Abe

    Inventor： Jun Iwashita ,  Shogo Matsumaru ,  Sho Abe

    IPC: G03F7/004 ,  G03F7/30

    CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/0382 ,  Y10S430/111

    Abstract: A novel resist composition and method of forming a resist pattern that can be used in lithography applications. The resist composition includes a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a polymer compound (A1) having a structural unit (a0) represented by general formula (a0-1) shown below, wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms, R2 and R3 each independently represents a hydrogen atom or an alkyl group that may include an oxygen atom at an arbitrary position, or R2 and R3 are bonded together to form an alkylene group, and W represents a cyclic alkylene group that may include an oxygen atom at an arbitrary position.

    Abstract translation: 形成可用于光刻应用的抗蚀剂图案的新型抗蚀剂组合物和方法。 抗蚀剂组合物包括在酸的作用下在碱性显影液中显示改变的溶解性的基础组分（A）和暴露时产生酸的酸产生剂组分（B），其中所述碱性组分（A）含有高分子化合物 A1）具有下述通式（a0-1）表示的结构单元（a0），其中R1表示氢原子，1〜5个碳原子的烷基或1〜5个碳原子的氟化烷基，R2 和R 3各自独立地表示氢原子或可以在任意位置含有氧原子的烷基，或者R 2和R 3结合在一起形成亚烷基，W表示可以包含氧原子的环状亚烷基 任意的位置

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