Abstract:
A polymer compound including a structural unit (a0) represented by general formula (a0-1) shown below: wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms; R2 and R3 each independently represents a hydrogen atom, an alkyl group or an alkoxy group, or R2 and R3 may be bonded together to form an alkylene group that may include an oxygen atom or sulfur atom at an arbitrary position, —O— or —S—; R4 and R5 each independently represents a hydrogen atom, an alkyl group that may include an oxygen atom at an arbitrary position, a cycloalkyl group that may include an oxygen atom at an arbitrary position or an alkoxycarbonyl group.
Abstract translation:包含如下所示的由通式(a0-1)表示的结构单元(a0)的高分子化合物:其中R1表示氢原子,1〜5个碳原子的烷基或1〜5个碳原子的氟化烷基; R 2和R 3各自独立地表示氢原子,烷基或烷氧基,或者R 2和R 3可以键合在一起形成在任意位置可以包含氧原子或硫原子的亚烷基,-O-或 - S- R 4和R 5各自独立地表示氢原子,可以包含任意位置的氧原子的烷基,可以包含任意位置的氧原子的环烷基或烷氧基羰基。
Abstract:
A polymer compound including a structural unit (a0) represented by general formula (a0-1) shown below: wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms; R2 and R3 each independently represents a hydrogen atom, an alkyl group or an alkoxy group, or R2 and R3 may be bonded together to form an alkylene group that may include an oxygen atom or sulfur atom at an arbitrary position, —O— or —S—; R4 and R5 each independently represents a hydrogen atom, an alkyl group that may include an oxygen atom at an arbitrary position, a cycloalkyl group that may include an oxygen atom at an arbitrary position or an alkoxycarbonyl group.
Abstract translation:包含如下所示的由通式(a0-1)表示的结构单元(a0)的高分子化合物:其中R1表示氢原子,1〜5个碳原子的烷基或1〜5个碳原子的氟化烷基; R 2和R 3各自独立地表示氢原子,烷基或烷氧基,或者R 2和R 3可以键合在一起形成任意位置上可以包含氧原子或硫原子的亚烷基,-O-或 - S- R 4和R 5各自独立地表示氢原子,可以包含任意位置的氧原子的烷基,可以包含任意位置的氧原子的环烷基或烷氧基羰基。
Abstract:
A novel resist composition and method of forming a resist pattern that can be used in lithography applications. The resist composition includes a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a polymer compound (A1) having a structural unit (a0) represented by general formula (a0-1) shown below, wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms, R2 and R3 each independently represents a hydrogen atom or an alkyl group that may include an oxygen atom at an arbitrary position, or R2 and R3 are bonded together to form an alkylene group, and W represents a cyclic alkylene group that may include an oxygen atom at an arbitrary position.
Abstract:
A novel resist composition and method of forming a resist pattern that can be used in lithography applications. The resist composition includes a base component (A) that exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a polymer compound (A1) having a structural unit (a0) represented by general formula (a0-1) shown below, wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a fluorinated alkyl group of 1 to 5 carbon atoms, R2 and R3 each independently represents a hydrogen atom or an alkyl group that may include an oxygen atom at an arbitrary position, or R2 and R3 are bonded together to form an alkylene group, and W represents a cyclic alkylene group that may include an oxygen atom at an arbitrary position.
Abstract:
A negative resist composition including: a fluorine-containing resin component (F) containing a structural unit (f1) represented by a general formula (f1-0) shown below, and a structural unit (f2) having an alkali-soluble group, an alkali-soluble resin component (A) excluding the fluorine-containing resin component (F), an acid generator component (B) that generates acid upon exposure, and a cross-linking component (C). [wherein, R7 represents a fluorinated alkyl group, and a represents either 0 or 1.]
Abstract:
A negative resist composition including: a fluorine-containing resin component (F) containing a structural unit (f1) represented by a general formula (f1-0) shown below, and a structural unit (f2) having an alkali-soluble group, an alkali-soluble resin component (A) excluding the fluorine-containing resin component (F), an acid generator component (B) that generates acid upon exposure, and a cross-linking component (C). [wherein, R7 represents a fluorinated alkyl group, and a represents either 0 or 1.]
Abstract:
A method of forming a resist pattern, including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent under action of an acid and an acid-generator component (B) which generates an acid upon exposure, conducting exposure of the resist film, and patterning the resist film by a negative tone development using a developing solution containing an organic solvent, wherein the base component (A) includes a resin component (A1) containing a structural unit (a0) derived from an acrylate ester containing an acid decomposable group which generates an alcoholic hydroxy group by the action of acid to thereby exhibit increased hydrophilicity.
Abstract:
A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure, wherein the acid-generator component (B) includes an acid generator (B1) composed of a compound having a base dissociable group within a cation moiety.
Abstract:
A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid, a basic-compound component (C) and an acid-generator component (B) which generates acid upon exposure, the component (B) including a compound represented by formula (b1), and the component (C) including at least one compound represented by formulas (c1) to (c3) (wherein Z1 represents a ring skeleton-containing hydrocarbon group, Q1 represents a divalent linking group containing oxygen, Y1 represents a fluorinated alkylene group, M+ represents an organic cation, R1 represents a fluorinated alkyl group or a hydrocarbon group, L1+ and L2+ represents a sulfonium or an iodonium, Z2 represents a hydrogen atom or a hydrocarbon group, Y2 represents a single bond or a divalent linking group containing no fluorine, R2 represents an organic group, Y3 represents an alkylene group or an arylene group; and Rf represents a fluorine-containing hydrocarbon group).
Abstract:
A method of forming a resist pattern including: forming a resist film on a substrate using a chemically amplified negative resist composition; forming a latent image of a first line and space pattern by subjecting the resist film to first exposure through a photomask; forming a latent image of a second line and space pattern so as to intersect with the latent image of the first line and space pattern by subjecting the resist film to second exposure through a photomask; and subjecting the resist film to developing to form a hole pattern in the resist film.