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    Interband quantum well cascade laser, with a blocking quantum well for improved quantum efficiency
    1.
    发明授权
    Interband quantum well cascade laser, with a blocking quantum well for improved quantum efficiency 失效
    带间量子阱级联激光器，具有用于提高量子效率的阻塞量子阱

    公开(公告)号：US5799026A

    公开(公告)日：1998-08-25

    申请号：US743433

    申请日：1996-11-01

    申请人： Jerry Meyer ,  Igor Vurgaftman ,  Ruan Q. Yang

    发明人： Jerry Meyer ,  Igor Vurgaftman ,  Ruan Q. Yang

    IPC分类号： H01S5/34 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3422 ,  H01S5/3401 ,  H01S5/3416 ,  H01S5/3419

    摘要： A gain region for an interban quantum well laser incudes (a) an emitter ron of semiconductor material having at least one conduction subband and at least one valence subband, these subbands being spaced apart by an energy band-gap; (b) a collector region of semiconductor material having at least one conduction subband and at least one valence subband, these subbands spaced apart by an energy band-gap; (c) a type-I or type-II active region; and (d) a blocking quantum well region of semiconductor material between the active region and the collector region, for keeping electrons in the active region from tunnelling or scattering into the collector region, but allowing electrons in the highest valence subband in the active region to pass into the collector region. Another aspect of the invention is a cascade laser made from a stack of these gain regions, connected in series, optical cladding regions at opposing ends of the stack, and a voltage source for applying a bias voltage to the stack, and an optical cavity perpendicular to the stacking axis fabricated by cleaving or other means.

    摘要翻译： 用于interban量子阱激光器的增益区域包括（a）具有至少一个导电子带和至少一个价带子带的半导体材料的发射极区域，这些子带间隔开能带隙; （b）半导体材料的集电极区域，具有至少一个导电子带和至少一个价带子带，这些子带间隔能量带隙; （c）I型或II型活性区; 以及（d）在有源区和集电极区之间的半导体材料的阻挡量子阱区，用于保持有源区中的电子不被隧穿或散射到集电极区，但允许有源区中最高价子带中的电子 进入收集区域。 本发明的另一方面是由堆叠的这些增益区域串联连接的级联激光器，堆叠的相对端的光学包层区域和用于向叠层施加偏置电压的电压源以及垂直于光学腔的光学腔 通过切割或其他方式制造的堆垛轴。

    Surface-emitting photonic crystal distributed feedback laser systems and methods
    2.
    发明授权
    Surface-emitting photonic crystal distributed feedback laser systems and methods 失效
    表面发射光子晶体分布反馈激光系统及方法

    公开(公告)号：US06826223B1

    公开(公告)日：2004-11-30

    申请号：US10446259

    申请日：2003-05-28

    申请人： Jerry Meyer ,  Igor Vurgaftman

    发明人： Jerry Meyer ,  Igor Vurgaftman

    IPC分类号： H01S308

    CPC分类号： H01S5/18 ,  H01S5/0425 ,  H01S5/105 ,  H01S5/1203 ,  H01S5/1206 ,  H01S5/1231 ,  H01S2301/18

    摘要： A surface-emitting photonic crystal distributed feedback laser apparatus configured to emit an optical beam of light. The apparatus includes a laser cavity bounded by top and bottom optical claddings, an active region configured to produce optical gain upon receiving optical or electrical pumping, a periodic two-dimensional grating having an order higher than the fundamental and configured to induce modulation of a modal refractive index, and lateral pumped gain area contained within an area covered by the grating, the lateral pumped gain area configured to produce gain in one or more lasing modes having a modal index modulated by the grating. The lateral pumped gain area has a substantially circular shape of diameter D, and wherein the pumped gain area is enclosed by an unpumped region contained within the area covered by the grating but not receiving the optical or electrical pumping.

    摘要翻译： 配置为发射光束的表面发射光子晶体分布反馈激光装置。 该装置包括由顶部和底部光学包层限定的激光腔，被配置为在接收光学或电学泵浦时产生光学增益的有源区域，周期性二维光栅，其具有高于基极的阶数并被配置为诱导模态的调制 折射率和包含在由光栅覆盖的区域内的横向泵浦增益区域，横向泵浦增益区域被配置为产生具有由光栅调制的模态指数的一个或多个激光模式的增益。 横向泵浦增益区域具有直径D的大致圆形形状，并且其中泵浦增益区域被包含在由光栅所覆盖的区域内的未抽空区域包围，但不接收光学或电气泵送。

    Photonic-crystal distributed-feedback and distributed bragg-reflector lasers
    3.
    发明授权
    Photonic-crystal distributed-feedback and distributed bragg-reflector lasers 失效

    公开(公告)号：US06996152B2

    公开(公告)日：2006-02-07

    申请号：US10385165

    申请日：2003-03-07

    申请人： Igor Vurgaftman ,  Jerry Meyer

    发明人： Igor Vurgaftman ,  Jerry Meyer

    IPC分类号： H01S3/08

    CPC分类号： B82Y10/00 ,  B82Y20/00 ,  H01S5/0267 ,  H01S5/0425 ,  H01S5/10 ,  H01S5/105 ,  H01S5/1071 ,  H01S5/1085 ,  H01S5/12 ,  H01S5/20

    摘要： A photonic-crystal distributed-feedback laser includes a laser cavity with a waveguide structure that has a cavity length Lc and is bounded by two mirrors; an active region for producing optical gain upon receiving optical pumping or an input voltage; at least one layer having a periodic two-dimensional grating with modulation of a modal refractive index, the grating being defined on a rectangular lattice with a first period along a first axis of the grating and a second period along a second perpendicular axis of the grating, and wherein the grating produces three diffraction processes having coupling coefficients κ1′, κ2′, κ3′; and a lateral gain area contained within a second area patterned with the grating that has substantially a shape of a gain stripe with a width W, with the gain stripe tilted at a first tilt angle relative to the two mirrors. The rectangular lattice of the grating is tilted at a second tilt angle substantially the same as the first tilt angle with respect to the gain stripe, and the ratio of the first and second grating periods is equal to the tangent of the first tilt angle, with the first tilt angle being between about 16° and about 23°. The hexagonal lattice does not need to be tilted with respect to the two mirrors. The laser's output emerges along the normal to a facet irrespective of the operating laser wavelength, facilitating coupling the laser light into a fiber or other optical system while avoiding beam steering. The two-dimensional nature of the feedback in the laser provides for varying the wavelength through angle tuning. Wavelength tuning by changing the propagation direction (propagation angle) permits a straightforward selection of different wavelengths from photonic crystal devices monolithically fabricated on a single wafer. The fabrication procedure is straightforward since no ridges need to be defined. The single-mode spectral purity of the rectangular-lattice PCDFB is robust, owing to the near absence of side modes, and exhibits good beam quality.

    Method for designing photonic-crystal distributed-feedback and distributed bragg-reflector lasers
    4.
    发明授权
    Method for designing photonic-crystal distributed-feedback and distributed bragg-reflector lasers 失效

    公开(公告)号：US06868107B2

    公开(公告)日：2005-03-15

    申请号：US10390255

    申请日：2003-03-07

    申请人： Igor Vurgaftman ,  Jerry Meyer

    发明人： Igor Vurgaftman ,  Jerry Meyer

    IPC分类号： H01S3/08 ,  H01S3/098 ,  H01S3/10 ,  H01S5/042 ,  H01S5/10 ,  H01S5/12 ,  H01S5/20

    CPC分类号： B82Y10/00 ,  B82Y20/00 ,  H01S5/0267 ,  H01S5/0425 ,  H01S5/10 ,  H01S5/105 ,  H01S5/1071 ,  H01S5/1085 ,  H01S5/12 ,  H01S5/20

    摘要： A method for calculating the beam quality and output wavelength spectrum of a photonic crystal distributed feedback laser includes the steps of calculating at least two coupling coefficients and forming a characteristic matrix; repeating the following steps at spaced increments of time until a steady state solution is reached: repeating the following steps for one of the incremental cavity lengths: calculating a gain change and a modal refractive index change for the laser waveguide structure for one incremental stripe width; calculating a spontaneous emission term for the gain change; calculating a gain roll-off term for the gain change; applying the gain change, the modal refractive index change, the spontaneous emission term, and the gain roll-off term to at least two forward-propagating beams and at least two backward-propagating beams for the one incremental stripe width; performing a Fourier transformation with respect to the one incremental stripe width to yield a plurality of diffraction terms; adding the diffraction terms to the characteristic matrix; propagating the two forward-propagating beams by the incremental cavity length from a first section to a succeeding and adjacent second section with the characteristic matrix; propagating the two backward-propagating beams by the incremental cavity length from the second section to the first section with the characteristic matrix; performing an inverse Fourier transformation with respect to the stripe width; and applying at least one boundary condition to a facet of the laser configuration for each time increment. The steady-state solution is used as the basis for evaluating the beam quality and output wavelength spectrum corresponding to the design parameters, the additional design parameters, and the photonic crystal geometry of the laser configuration. The invention provides scientists with an approach to designing and building lasers that eliminates much of the time and resources otherwise needed in the building and testing of unsuccessful designs.

    High-temperature interband cascade lasers
    6.
    发明授权
    High-temperature interband cascade lasers 有权
    高温带间级联激光器

    公开(公告)号：US08493654B2

    公开(公告)日：2013-07-23

    申请号：US13353770

    申请日：2012-01-19

    申请人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  James R. Lindle ,  Chul-soo Kim ,  Mijin Kim

    发明人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  James R. Lindle ,  Chul-soo Kim ,  Mijin Kim

    IPC分类号： H01S5/30

    CPC分类号： B82Y20/00 ,  H01S5/3077 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/3422 ,  H01S5/34306

    摘要： An interband cascade gain medium is provided. The gain medium can include at least one thick separate confinement layer comprising Ga(InAlAs)Sb between the active gain region and the cladding and can further include an electron injector region having a reduced thickness, a hole injector region comprising two hole quantum wells having a total thickness greater than about 100 Å, an active gain quantum well region separated from the adjacent hole injector region by an electron barrier having a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states, and a thick AlSb barrier separating the electron and hole injectors of at least one stage of the active region.

    摘要翻译： 提供了一个带间级联增益介质。 所述增益介质可以包括至少一个厚的单独约束层，其包括在所述有源增益区域和所述包层之间的Ga（InAlAs）Sb，并且还可以包括具有减小的厚度的电子注入器区域，空穴注入器区域，包括两个具有 总厚度大于约100，通过电子势垒与相邻的空穴注入器区域隔开的有效增益量子阱区域，该电子势垒具有足以降低区域中心活性电子量子阱和喷射器孔状态之间的波函数的平方的重叠度 ，以及分离活性区域的至少一级的电子和空穴注入器的厚AlSb屏障。

    Interband Cascade Lasers
    8.
    发明申请
    Interband Cascade Lasers 有权
    带间级联激光器

    公开(公告)号：US20130003770A1

    公开(公告)日：2013-01-03

    申请号：US13608115

    申请日：2012-09-10

    申请人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick L. Canedy ,  William W. Bewley ,  James R. Lindle ,  Chul-soo Kim ,  Mijin Kim

    发明人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick L. Canedy ,  William W. Bewley ,  James R. Lindle ,  Chul-soo Kim ,  Mijin Kim

    IPC分类号： H01S5/34 ,  H01S5/343

    CPC分类号： B82Y20/00 ,  H01S5/3401 ,  H01S5/3422 ,  H01S5/34306

    摘要： A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cm2 and threshold power density of about 900 W/cm2.

    摘要翻译： 提出了具有增益介质的增益介质和带间级联激光器。 增益介质可以具有以下特征中的一个或两个：（1）空穴注入器区域中的一个或多个空穴量子阱的厚度与有源量子阱区域中的有源孔量子阱的厚度相当， 使得空穴注入器区域中的价带最大值比活性孔量子阱中的价带最大值低至少100meV; 和（2）电子注入器区域的最后一个阱的厚度在介质的下一阶段的有源增益区域中的第一有源电子量子阱的厚度的85至110％之间。 包含根据本发明的增益介质的激光器可以在高温下在室温连续波操作中在约2.5至8μm的中红外范围内发射至少为4.6μm的波长，约400的阈值电流密度 A / cm 2和阈值功率密度约900W / cm2。

    High-Temperature Interband Cascade Lasers
    9.
    发明申请
    High-Temperature Interband Cascade Lasers 有权
    高温区间级联激光器

    公开(公告)号：US20120127564A1

    公开(公告)日：2012-05-24

    申请号：US13353770

    申请日：2012-01-19

    申请人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick L. Canedy ,  William W. Bewley ,  James R. Lindle ,  Chul-soo Kim ,  Mijin Kim

    发明人： Igor Vurgaftman ,  Jerry R. Meyer ,  Chadwick L. Canedy ,  William W. Bewley ,  James R. Lindle ,  Chul-soo Kim ,  Mijin Kim

    IPC分类号： H01S5/343 ,  B82Y20/00

    CPC分类号： B82Y20/00 ,  H01S5/3077 ,  H01S5/3401 ,  H01S5/3407 ,  H01S5/3416 ,  H01S5/3422 ,  H01S5/34306

    摘要： An interband cascade gain medium is provided. The gain medium can include at least one thick separate confinement layer comprising Ga(InAlAs)Sb between the active gain region and the cladding and can further include an electron injector region having a reduced thickness, a hole injector region comprising two hole quantum wells having a total thickness greater than about 100 Å, an active gain quantum well region separated from the adjacent hole injector region by an electron barrier having a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states, and a thick AlSb barrier separating the electron and hole injectors of at least one stage of the active region.

    摘要翻译： 提供了一个带间级联增益介质。 所述增益介质可以包括至少一个厚的单独约束层，其包括在所述有源增益区域和所述包层之间的Ga（InAlAs）Sb，并且还可以包括具有减小的厚度的电子注入器区域，空穴注入器区域，包括两个具有 总厚度大于约100，通过电子势垒与相邻的空穴注入器区域隔开的有效增益量子阱区域，该电子势垒具有足以降低区域中心活性电子量子阱和喷射器孔状态之间的波函数的平方的重叠度 ，以及分离活性区域的至少一级的电子和空穴注入器的厚AlSb屏障。

    Quantitative mobility spectrum analysis of magnetic-field dependent hall and resistivity data
    10.
    发明授权
    Quantitative mobility spectrum analysis of magnetic-field dependent hall and resistivity data 失效
    磁场依赖霍尔和电阻率数据的定量迁移谱分析

    公开(公告)号：US6100704A

    公开(公告)日：2000-08-08

    申请号：US69945

    申请日：1998-04-30

    申请人： Jerry R. Meyer ,  Igor Vurgaftman ,  David Redfern ,  Jaroslav Antoszewski ,  Lorenzo Faraone ,  Jeffrey R. Lindenmuth

    发明人： Jerry R. Meyer ,  Igor Vurgaftman ,  David Redfern ,  Jaroslav Antoszewski ,  Lorenzo Faraone ,  Jeffrey R. Lindenmuth

    IPC分类号： G01R31/26

    CPC分类号： G01R31/2648

    摘要： The present invention is a method for determining a carrier conductivity-rier mobility spectrum for a semiconductor sample, having the steps of: exposing the semiconductor sample to a range K of discrete magnetic fields k=1,2, . . . K; for each field obtaining a Hall coefficient R.sub.H and a resistivity .rho., and calculating from R.sub.H (B.sub.k) and .sigma.(B.sub.k) experimental conductivity tensor components .sigma..sub.xx.sup.k (exp) and .sigma..sub.xy.sup.k (exp), and slopes of these conductivity tensor components .sigma.'.sub.xx.sup.k (exp) and .sigma.'.sub.xy.sup.k (exp); selecting a trial carrier conductivity-carrier mobility spectrum s.sub.i corresponding to a plurality I of carrier mobilities .mu..sub.i, i=1,2, . . . I; for each B.sub.j, using this trial carrier conductivity-carrier mobility spectrum to calculate conductivity tensor components .sigma..sub.xx.sup.j and .sigma..sub.xy.sup.j, and slopes of the conductivity tensor components .sigma.'.sub.xx.sup.j and .sigma.'.sub.xy.sup.j ; for each B.sub.j, calculating errors .DELTA..sub.xx.sup.j .ident..sigma..sub.xx.sup.j (exp)-.sigma..sub.xx.sup.j, .DELTA..sub.xy.sup.j .ident..sigma..sub.xy.sup.j (exp)-.sigma..sub.xy.sup.j, .DELTA.'.sub.xx.sup.j (exp)-.sigma.'.sub.xx.sup.j, and .DELTA.'.sub.xy.sup.j .ident..sigma.'.sub.xy.sup.j (exp)-.sigma.'.sub.xy.sup.j, and calculating therefrom a total weighted squared error .chi..sub.j.sup.2 ; for each B.sub.j and at least a subset of .mu..sub.i, calculating an optimum change to said trial carrier conductivity-carrier mobility spectrum .delta.s.sub.ij, and calculating therefrom a modified total weighted squared error .chi..sub.ij.sup.2 ; for each B.sub.j, determining a minimum carrier mobility point .mu..sub.iminj whose corresponding change .delta.s.sub.ij that yields the lowest weighted squared error .chi..sub.ij.sup.2 ; for each B.sub.j and at least a subset of .mu..sub.i, changing the carrier conductivity-carrier mobility spectrum by not more than .delta.s.sub.ij.

    摘要翻译： 本发明是用于确定半导体样品的载流子传导率 - 载流子迁移率谱的方法，具有以下步骤：将半导体样品暴露于离散磁场k = 1,2的范围K。 。 。 K; 对于每个场获得霍尔系数RH和电阻率rho，并且从RH（Bk）和西格马（Bk）实验电导率张量分量sigma xxk（exp）和sigma xyk（exp）计算，并且这些电导率张量分量sigma' xxk（exp）和sigma'xyk（exp）; 选择对应于载波移动性的多个I，i = 1,2的试验载波电导率 - 载流子迁移率谱si。 。 。 一世; 对于每个Bj，使用该试验载体电导率 - 载流子迁移率谱来计算电导率张量分量sigma xxj和sigma xyj，以及电导率张量分量sigma'xxj和sigma'xyj的斜率; 对于每个Bj，计算误差DELTA xxj = sigma xxj（exp） - sigma xxj，DELTA xyj = sigma xyj（exp） - sigma xyj，DELTA'xxj（exp） - sigma'xxj和DELTA'xyj = sigma'xyj exp）-σ'xyj，并从其计算总加权平方误差chi j2; 对于每个Bj和至少一个mu i的子集，计算对所述试验载波电导率 - 载波移动频谱δsij的最佳改变，并从其计算修改的总加权平方误差chi ij2; 对于每个Bj，确定最小载波移动点mu iminj，其对应的变化Δsij产生最低加权平方误差chi ij2; 对于每个Bj和至少一个μi的子集，将载波电导率 - 载流子迁移谱改变不超过δsij。