公开(公告)号：US20110024722A1

公开(公告)日：2011-02-03

申请号：US12920391

申请日：2009-03-09

申请人： Theodore D. Moustakas ,  Adam Moldawer ,  Anirban Bhattacharyya ,  Joshua Abell

发明人： Theodore D. Moustakas ,  Adam Moldawer ,  Anirban Bhattacharyya ,  Joshua Abell

IPC分类号： H01L33/04 ,  H01L21/20

CPC分类号： H01L33/24 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32

摘要： A semiconductor emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

摘要翻译： 半导体发射器或其前体具有衬底和以非极性取向沉积到衬底上的一个或多个有纹理的半导体层。 纹理层增强光提取，与常规器件相比，非极性取向的使用大大提高了内部量子效率。 本发明的发射体的内部和外部量子效率都可以为70-80％以上。 本发明提供了适用于固态照明的高效发光二极管。

公开(公告)号：US20130243020A1

公开(公告)日：2013-09-19

申请号：US13802887

申请日：2013-03-14

申请人： Chul Soo Kim ,  William W. Bewley ,  Mijin Kim ,  Charles D. Merritt ,  Chadwick Lawrence Canedy ,  Joshua Abell ,  Igor Vurgaftman ,  Jerry R. Meyer

发明人： Chul Soo Kim ,  William W. Bewley ,  Mijin Kim ,  Charles D. Merritt ,  Chadwick Lawrence Canedy ,  Joshua Abell ,  Igor Vurgaftman ,  Jerry R. Meyer

IPC分类号： H01S5/024 ,  H01S5/022

CPC分类号： H01S5/024 ,  H01S5/005 ,  H01S5/022 ,  H01S5/0224 ,  H01S5/02248 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/183 ,  H01S5/22 ,  H01S2301/176

摘要： A laser apparatus configured for epitaxial-side-down mounting on a heat sink. The laser apparatus includes a semiconductor laser structure and at least one post on a substrate where the laser structure and post are separated from each other by a channel. The laser structure and the posts optionally are coated with a heat-spreading material layer and are configured so that the maximum height of the posts is about the same as the maximum height of the laser structure. When the laser apparatus is mounted to a heat sink in an epi-down configuration using solder applied to the top of the laser structure and the at least one post, the channels between the at least one post and the laser structure provide a relief flow path for the solder and ensure that the laser structure does not come directly into contact with the solder.

摘要翻译： 一种激光装置，其配置为在散热器上外延安装。 激光装置包括半导体激光器结构和在基板上的至少一个柱，其中激光器结构和柱通过通道彼此分离。 激光结构和柱可选地涂覆有热扩散材料层，并且构造成使得柱的最大高度与激光结构的最大高度大致相同。 当使用施加到激光结构的顶部的焊料和至少一个柱将激光装置以外延形式安装到散热器时，至少一个支柱和激光结构之间的通道提供一个释放流动路径 用于焊料，并确保激光器结构不会直接与焊料接触。

公开(公告)号：US08879593B2

公开(公告)日：2014-11-04

申请号：US13802887

申请日：2013-03-14

申请人： Chul Soo Kim ,  William W. Bewley ,  Mijin Kim ,  Charles D. Merritt ,  Chadwick Lawrence Canedy ,  Joshua Abell ,  Igor Vurgaftman ,  Jerry R. Meyer

发明人： Chul Soo Kim ,  William W. Bewley ,  Mijin Kim ,  Charles D. Merritt ,  Chadwick Lawrence Canedy ,  Joshua Abell ,  Igor Vurgaftman ,  Jerry R. Meyer

IPC分类号： H01S3/04 ,  H01S5/024 ,  H01S5/022 ,  H01S5/00 ,  H01S5/183 ,  H01S5/22

CPC分类号： H01S5/024 ,  H01S5/005 ,  H01S5/022 ,  H01S5/0224 ,  H01S5/02248 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/183 ,  H01S5/22 ,  H01S2301/176

摘要： A laser apparatus configured for epitaxial-side-down mounting on a heat sink. The laser apparatus includes a semiconductor laser structure and at least one post on a substrate where the laser structure and post are separated from each other by a channel. The laser structure and the posts optionally are coated with a heat-spreading material layer and are configured so that the maximum height of the posts is about the same as the maximum height of the laser structure. When the laser apparatus is mounted to a heat sink in an epi-down configuration using solder applied to the top of the laser structure and the at least one post, the channels between the at least one post and the laser structure provide a relief flow path for the solder and ensure that the laser structure does not come directly into contact with the solder.

摘要翻译： 一种激光装置，其配置为在散热器上外延安装。 激光装置包括半导体激光器结构和在基板上的至少一个柱，其中激光器结构和柱通过通道彼此分离。 激光结构和柱可选地涂覆有热扩散材料层，并且构造成使得柱的最大高度与激光结构的最大高度大致相同。 当使用施加到激光结构的顶部的焊料和至少一个柱将激光装置以外延形式安装到散热器时，至少一个支柱和激光结构之间的通道提供一个释放流动路径 用于焊料，并确保激光器结构不会直接与焊料接触。

公开(公告)号：US08592800B2

公开(公告)日：2013-11-26

申请号：US12920391

申请日：2009-03-09

申请人： Theodore D. Moustakas ,  Adam Moldawer ,  Anirban Bhattacharyya ,  Joshua Abell

发明人： Theodore D. Moustakas ,  Adam Moldawer ,  Anirban Bhattacharyya ,  Joshua Abell

IPC分类号： H01L29/06

CPC分类号： H01L33/24 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32

摘要： A semiconductor emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate in a nonpolar orientation. The textured layers enhance light extraction, and the use of nonpolar orientation greatly enhances internal quantum efficiency compared to conventional devices. Both the internal and external quantum efficiencies of emitters of the invention can be 70-80% or higher. The invention provides highly efficient light emitting diodes suitable for solid state lighting.

摘要翻译： 半导体发射器或其前体具有衬底和以非极性取向沉积到衬底上的一个或多个有纹理的半导体层。 纹理层增强光提取，与常规器件相比，非极性取向的使用大大提高了内部量子效率。 本发明的发射体的内部和外部量子效率都可以为70-80％以上。 本发明提供了适用于固态照明的高效发光二极管。

公开(公告)号：US20150325720A1

公开(公告)日：2015-11-12

申请号：US14740348

申请日：2015-06-16

申请人： Robert J. Walters ,  Phillip Jenkins ,  Maria Gonzalez ,  Igor Vurgaftman ,  Jerry R. Meyer ,  Joshua Abell ,  Nicholas Ekins-Daukes ,  Jessica Adams ,  Paul Stavrinou ,  Michael K. Yakes ,  Joseph G. Tischler ,  Cory D. Cress ,  Matthew P. Lumb ,  Ngai Chan

发明人： Robert J. Walters ,  Phillip Jenkins ,  Maria Gonzalez ,  Igor Vurgaftman ,  Jerry R. Meyer ,  Joshua Abell ,  Nicholas Ekins-Daukes ,  Jessica Adams ,  Paul Stavrinou ,  Michael K. Yakes ,  Joseph G. Tischler ,  Cory D. Cress ,  Matthew P. Lumb ,  Ngai Chan

IPC分类号： H01L31/0304 ,  H01L31/036

CPC分类号： H01L31/0304 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/036 ,  H01L31/06875 ,  Y02E10/544

摘要： A multijunction (MJ) solar cell grown on an InP substrate using materials that are lattice-matched to InP. In an exemplary three-junction embodiment, the top cell is formed from In1-xAlxAs1-ySby (with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), the middle cell from In1-a-bGaaAlbAs (with a and b adjusted so as to achieve lattice-matching with InP, hereafter referred to as InGaAlAs), and the bottom cell also from InGaAlAs, but with a much lower Al composition, which in some embodiments can be zero so that the material is InGaAs. Tunnel junctions (TJs) connect the junctions and allow photo-generated current to flow. In an exemplary embodiment, an InAlAsSb TJ connects the first and second junctions, while an InGaAlAs TJ connects the second and third junctions.

摘要翻译： 使用与InP晶格匹配的材料在InP衬底上生长的多结（MJ）太阳能电池。 在示例性的三结实施例中，顶部单元由In1-xAlxAs1-ySby（其中x和y被调整以便实现与InP的晶格匹配，以下称为InAlAsSb），In1-a- bGaaAlbAs（其中a和b被调整以便实现与InP的晶格匹配，以下称为InGaAlAs），并且底部单元也是来自InGaAlAs，但具有低得多的Al组成，其在一些实施例中可以为零， 材料是InGaAs。 隧道结（TJ）连接接头并允许光电流流动。 在示例性实施例中，InAlAsSb TJ连接第一和第二结，而InGaAlAs TJ连接第二和第三结。

公开(公告)号：US20130048063A1

公开(公告)日：2013-02-28

申请号：US13592524

申请日：2012-08-23

申请人： Robert J. Walters ,  Phillip Jenkins ,  Maria Gonzalez ,  Igor Vurgaftman ,  Jerry R. Meyer ,  Joshua Abell ,  Matthew P. Lumb ,  Michael K. Yakes ,  Joseph G. Tischler ,  Cory Cress ,  Nicholas Ekins-Daukes ,  Paul Stavrinou ,  Jessica Adams ,  Ngai Chan

发明人： Robert J. Walters ,  Phillip Jenkins ,  Maria Gonzalez ,  Igor Vurgaftman ,  Jerry R. Meyer ,  Joshua Abell ,  Matthew P. Lumb ,  Michael K. Yakes ,  Joseph G. Tischler ,  Cory Cress ,  Nicholas Ekins-Daukes ,  Paul Stavrinou ,  Jessica Adams ,  Ngai Chan

IPC分类号： H01L31/0725 ,  G06F17/50

CPC分类号： H01L31/0304 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/036 ,  H01L31/06875 ,  Y02E10/544

摘要： A multijunction (MJ) solar cell grown on an InP substrate using materials that are lattice-matched to InP. In an exemplary three-junction embodiment, the top cell is formed from In1-xAlxAs1-ySby (with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), the middle cell from In1-a-bGaaAlbAs (with a and b adjusted so as to achieve lattice-matching with InP, hereafter referred to as InGaAlAs), and the bottom cell also from InGaAlAs, but with a much lower Al composition, which in some embodiments can be zero so that the material is InGaAs. Tunnel junctions (TJs) connect the junctions and allow photo-generated current to flow. In an exemplary embodiment, an InAlAsSb TJ connects the first and second junctions, while an InGaAlAs TJ connects the second and third junctions.