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    III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier
    1.
    发明授权
    III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier 有权
    具有高Al AlGaN扩散阻挡层的III族氮化物光电子器件结构

    公开(公告)号：US07282744B2

    公开(公告)日：2007-10-16

    申请号：US10840515

    申请日：2004-05-06

    申请人： Jeffrey S. Flynn ,  Huoping Xin ,  George R. Brandes

    发明人： Jeffrey S. Flynn ,  Huoping Xin ,  George R. Brandes

    IPC分类号： H01L29/22

    CPC分类号： H01L33/32 ,  H01L33/02

    摘要： A III-nitride electronic device structure including doped material, an active region and a barrier material arranged to suppress transport of dopant from the doped material into the active region, wherein the barrier material comprises high-Al content AlxGayN, wherein x+y=1, and x≧0.50. In a specific aspect, AIN is used as a migration/diffusion barrier layer at a thickness of from about 5 to about 200 Angstroms, to suppress flux of magnesium and/or silicon dopant material into the active region of the III-nitride electronic device, e.g., a UV LED optoelectronic device.

    摘要翻译： 一种III族氮化物电子器件结构，包括掺杂材料，有源区和阻挡材料，其被布置成抑制掺杂剂从掺杂材料转移到有源区中，其中阻挡材料包括高Al含量的Al x 其中x + y = 1，x> = 0.50。 在一个具体方面，将AIN用作厚度为约5至约200埃的迁移/扩散阻挡层，以抑制镁和/或硅掺杂剂材料流入III族氮化物电子器件的有源区， 例如，UV LED光电器件。

    VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY
    6.
    发明申请
    VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY 有权
    用于高品质HOMOEPITAXY的VICINAL GALLIUM NITRIDE底物

    公开(公告)号：US20080199649A1

    公开(公告)日：2008-08-21

    申请号：US12102275

    申请日：2008-04-14

    申请人： Xueping Xu ,  Robert P. Vaudo ,  Jeffrey S. Flynn ,  George R. Brandes

    发明人： Xueping Xu ,  Robert P. Vaudo ,  Jeffrey S. Flynn ,  George R. Brandes

    IPC分类号： B32B3/02 ,  C01B21/00 ,  C01B21/06 ,  C01B21/072 ,  H01L31/00 ,  B32B9/00

    CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B29/406 ,  H01L29/045 ,  H01L29/2003 ,  Y10T83/0524 ,  Y10T428/31

    摘要： A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the direction predominantly toward a direction selected from the group consisting of and directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E6 cm−2. The substrate may be formed by offcut slicing of a corresponding boule or wafer blank, by offcut lapping or growth of the substrate body on a corresponding vicinal heteroepitaxial substrate, e.g., of offcut sapphire. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III-V nitride-based microelectronic and opto-electronic devices.

    摘要翻译： III-V族氮化物，例如GaN，衬底，其包括从<0001>方向切除的（0001）表面主要朝向选自<10-10>和<11-20>方向的方向切割 在约0.2至约10度的范围内的角度，其中表面具有通过50×50μm2μmAFM扫描测量的RMS粗糙度小于1nm，位错密度小于 3E6厘米-2。 可以通过在对应的邻位异质外延基底（例如切断蓝宝石）上的基底主体的切削研磨或生长来对对应的原子块或晶片坯料进行切割切片来形成基底。 在制造III-V族氮化物微电子和光电子器件时，该衬底有效地用于同质外延沉积。

    Vicinal gallium nitride substrate for high quality homoepitaxy
    9.
    发明授权
    Vicinal gallium nitride substrate for high quality homoepitaxy 有权
    用于高质量同质外延的最终氮化镓衬底

    公开(公告)号：US08043731B2

    公开(公告)日：2011-10-25

    申请号：US12713514

    申请日：2010-02-26

    申请人： Xueping Xu ,  Robert P. Vaudo ,  Jeffrey S. Flynn ,  George R. Brandes

    发明人： Xueping Xu ,  Robert P. Vaudo ,  Jeffrey S. Flynn ,  George R. Brandes

    IPC分类号： B32B18/00 ,  B32B11/08

    CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B29/406 ,  H01L29/045 ,  H01L29/2003 ,  Y10T83/0524 ,  Y10T428/31

    摘要： A III-V nitride, e.g., GaN, substrate including a (0001) surface offcut from the direction predominantly toward a direction selected from the group consisting of and directions, at an offcut angle in a range that is from about 0.2 to about 10 degrees, wherein the surface has a RMS roughness measured by 50×50 μm2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3 E6 cm−2. The substrate may be formed by offcut slicing of a corresponding boule or wafer blank, by offcut lapping or growth of the substrate body on a corresponding vicinal heteroepitaxial substrate, e.g., of offcut sapphire. Both upper and lower surfaces may be offcut. The substrate is usefully employed for homoepitaxial deposition in the fabrication of III-V nitride-based microelectronic and opto-electronic devices.

    摘要翻译： III-V族氮化物，例如GaN，衬底，其包括从<0001>方向切除的（0001）表面主要朝向选自<10-10>和<11-20>方向的方向切割 在约0.2至约10度的范围内的角度，其中表面具有通过50×50μm2 AFM扫描测量的RMS粗糙度小于1nm，位错密度小于3E6cm-2。 可以通过在对应的邻位异质外延基底（例如切断蓝宝石）上的基底主体的切削研磨或生长来对对应的原子块或晶片坯料进行切割切片来形成基底。 上表面和下表面都可以被切断。 在制造III-V族氮化物微电子和光电子器件时，该衬底有效地用于同质外延沉积。