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公开(公告)号：US12119407B2
公开(公告)日：2024-10-15
申请号：US18163045
申请日：2023-02-01
申请人： Japan Display Inc.
IPC分类号： H01L29/786 , H01L29/417
CPC分类号： H01L29/7869 , H01L29/41733
摘要： A semiconductor device includes a gate electrode on a substrate, a gate insulating film on the gate electrode, an oxide semiconductor film via the gate insulating film on the gate electrode, a source electrode and a drain electrode on the oxide semiconductor film, a protective film provided on the source electrode and the drain electrode; and a conductive layer provided on the protective film and overlapped on the oxide semiconductor layer. The protective film includes a first silicon oxide film and a first silicon nitride film. The first oxide film is in contact with the oxide semiconductor layer. The gate insulating film includes a second silicon nitride film and a second silicon oxide film. The second silicon oxide film is in contact with the oxide semiconductor layer. The oxide semiconductor layer has a first region located between the source electrode and the drain electrode in a plan view.
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公开(公告)号：US12010871B2
公开(公告)日：2024-06-11
申请号：US17199991
申请日：2021-03-12
申请人： Japan Display Inc.
发明人： Masashi Tsubuku , Tatsuya Toda
IPC分类号： H10K59/121 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： H10K59/1213 , H01L29/42384 , H01L29/4908 , H01L29/78648 , H01L29/7869 , H01L27/1225 , H01L2029/42388
摘要： A thin film transistor including: an active layer formed of an oxide semiconductor including at least indium and gallium; a gate electrode; a first gate insulating layer disposed between the active layer and the gate electrode on the gate electrode side; and a second gate insulating layer, which is a hydrogen block layer, disposed between the active layer and the gate electrode on the active layer side.
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公开(公告)号：US20200381472A1
公开(公告)日：2020-12-03
申请号：US16999214
申请日：2020-08-21
申请人： Japan Display Inc.
IPC分类号： H01L27/146 , H01L31/032 , H01L31/113
摘要： According to one embodiment, an optical sensor device includes an insulating substrate, a first conductive layer and an optical sensor element disposed between the insulating substrate and the first conductive layer. The optical sensor element is electrically connected to the first conductive layer and covered by the first conductive layer. The optical sensor element includes a first semiconductor layer formed of an oxide semiconductor and controls an amount of charge flowing to the first conductive layer according to an amount of incident light to the first semiconductor layer.
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公开(公告)号：US12094980B2
公开(公告)日：2024-09-17
申请号：US17483836
申请日：2021-09-24
申请人： Japan Display Inc.
发明人： Tatsuya Toda , Masashi Tsubuku , Toshinari Sasaki
IPC分类号： H01L27/12 , G01N23/20091 , H01L29/786
CPC分类号： H01L29/7869 , G01N23/20091 , H01L27/1225 , H01J2237/2442
摘要： A semiconductor device includes an oxide semiconductor layer including indium, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, and a first electrode arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer. The indium is unevenly distributed in an unevenly distributed region among the oxide semiconductor layer. The unevenly distributed region overlaps with the first conductive layer in a planar view.
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公开(公告)号：US11973161B2
公开(公告)日：2024-04-30
申请号：US18091388
申请日：2022-12-30
申请人： Japan Display Inc.
IPC分类号： H01L31/12 , G06F1/16 , H01L31/101
CPC分类号： H01L31/125 , G06F1/1605 , H01L31/1016
摘要： A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.
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公开(公告)号：US11901465B2
公开(公告)日：2024-02-13
申请号：US17841731
申请日：2022-06-16
申请人： Japan Display Inc.
发明人： Masashi Tsubuku
IPC分类号： H01L31/0216 , H01L31/0224
CPC分类号： H01L31/02164 , H01L31/022408 , H01L31/022483
摘要： The optical sensor includes a substrate, a first transistor for functioning as a light-receiving element and a second transistor for writing/reading in a pixel region provided on the substrate. The first transistor is formed by a transistor using polycrystalline silicon, the second transistor is formed by a transistor using an oxide semiconductor. A light-shielding layer is provided on the back side of the oxide semiconductor of the second transistor. Thus, it is possible to irradiate light to the optical sensor fora long time, and in addition to increasing the amount of light received by the first transistor, it is possible to suppress variations in the characteristics of the second transistor.
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公开(公告)号：US11575062B2
公开(公告)日：2023-02-07
申请号：US17527192
申请日：2021-11-16
申请人： Japan Display Inc.
IPC分类号： H01L27/14 , H01L31/12 , G06F1/16 , H01L31/101
摘要： A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.
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公开(公告)号：US12069925B2
公开(公告)日：2024-08-20
申请号：US17699250
申请日：2022-03-21
申请人： Japan Display Inc.
发明人： Hayata Aoki , Masashi Tsubuku , Toshinari Sasaki
IPC分类号： H10K59/35 , G09F9/33 , H10K50/828
CPC分类号： H10K59/353 , H10K50/828 , G09F9/335
摘要： According to one embodiment, a display device includes a first area including a pixel and a second area different from the first area, wherein the pixel includes a pixel electrode, an organic material layer including a light-emitting layer, a first common electrode, and a second common electrode having transmittance higher than that of the first insulating layer, the second area is an area not overlapping the light-emitting layer in plan view, the second area is a transparent area, and the second area does not comprise the first common electrode provided therein.
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公开(公告)号：US11594641B2
公开(公告)日：2023-02-28
申请号：US17111810
申请日：2020-12-04
申请人： Japan Display Inc.
IPC分类号： H01L29/00 , H01L29/786 , H01L29/417
摘要： A semiconductor device includes a gate electrode on a substrate, a gate insulating film on the gate electrode, an oxide semiconductor film via the gate insulating film on the gate electrode, a source electrode and a drain electrode on the oxide semiconductor film, a protective film provided on the source electrode and the drain electrode; and a conductive layer provided on the protective film and overlapped on the oxide semiconductor layer. The protective film includes a first silicon oxide film and a first silicon nitride film. The first oxide film is in contact with the oxide semiconductor layer. The gate insulating film includes a second silicon nitride film and a second silicon oxide film. The second silicon oxide film is in contact with the oxide semiconductor layer. The oxide semiconductor layer has a first region located between the source electrode and the drain electrode in a plan view.
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公开(公告)号：US11189745B2
公开(公告)日：2021-11-30
申请号：US17024725
申请日：2020-09-18
申请人： Japan Display Inc.
IPC分类号： H01L27/14 , H01L31/12 , G06F1/16 , H01L31/101
摘要： The problem of the present disclosure is to provide a photo sensor circuit that uses oxide semiconductor transistors and the operation of which is stable. The photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. Each of the photo transistor, the first switching transistor, and the second transistor includes an oxide semiconductor layer as a channel layer.
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