公开(公告)号：US07869894B2

公开(公告)日：2011-01-11

申请号：US11420625

申请日：2006-05-26

Applicant: James Broc Stirton ,  Andre Holfeld

Inventor： James Broc Stirton ,  Andre Holfeld

IPC: G06F19/00

CPC classification number: G05B19/41875 ,  G05B2219/37224 ,  G05B2219/45031 ,  G05B2219/50058 ,  H01L22/20 ,  Y02P90/22

Abstract: By directly using relative biases, contained in the relative bias date matrix, and by appropriately weighting the components thereof, sampling rate limitations in an APC control scheme may be efficiently compensated for. In particular embodiments, an age-based weighting factor is established that scales measurement data uncertainty according to the delay with which the corresponding measurement data for a specific control thread are obtained.

Abstract translation: 通过直接使用包含在相对偏置日期矩阵中的相对偏差，并且通过适当地加权其组件，可以有效地补偿APC控制方案中的采样率限制。 在具体实施例中，建立基于年龄的加权因子，其根据获得特定控制线程的相应测量数据的延迟来缩放测量数据不确定度。

公开(公告)号：US07330800B1

公开(公告)日：2008-02-12

申请号：US11539800

申请日：2006-10-09

Applicant: Richard P. Good ,  James Broc Stirton

Inventor： Richard P. Good ,  James Broc Stirton

IPC: G01N37/00

CPC classification number: G01R31/2894 ,  G01R31/31718

Abstract: A method includes providing a plurality of sampling rules. Each sampling rule is associated with at least one of a plurality of sites on a workpiece. At least one penalty is assigned to each sampling rule. The penalty is assessed responsive to a previous site selection not satisfying the associated sampling rule. A subset of the sites is selected for subsequent metrology based on the sampling rules and the assessed penalties. At least one characteristic of the workpiece is measured at the selected subset of the sites.

Abstract translation: 一种方法包括提供多个采样规则。 每个采样规则与工件上的多个位置中的至少一个相关联。 每个采样规则至少分配一个罚款。 罚款是根据以前的场地选择进行评估，不符合相关抽样规则。 基于采样规则和评估的处罚，选择一个子站点用于后续计量。 工件的至少一个特征是在所选位置的子集上进行测量。

公开(公告)号：US06933158B1

公开(公告)日：2005-08-23

申请号：US10285041

申请日：2002-10-31

Applicant: Kevin R. Lensing ,  James Broc Stirton ,  Homi E. Nariman ,  Steven P. Reeves

Inventor： Kevin R. Lensing ,  James Broc Stirton ,  Homi E. Nariman ,  Steven P. Reeves

IPC: G01N21/21 ,  G01N21/47 ,  H01L21/265 ,  H01L21/324 ,  H01L21/66 ,  H01L23/544

CPC classification number: G01N21/4788 ,  G01N21/211 ,  H01L21/26513 ,  H01L21/324 ,  H01L22/20 ,  H01L22/34

Abstract: The present invention is directed to several inventive methods of monitoring anneal processes performed on implant regions, and a system for accomplishing same. In one aspect, the method comprises forming a first plurality of implant regions in a semiconducting substrate, performing at least one anneal process on implant regions, performing a scatterometric measurement of at least one of the implant regions after at least a portion of the anneal process is performed to determine a profile of the implant region and determining an effectiveness of the anneal process based upon the determined profile of the implant region. In other embodiments, one or more parameters of the anneal process may be varied on subsequently processed substrates based upon the determined efficiency of the anneal process.

Abstract translation: 本发明涉及用于监测在植入区域上执行的退火处理的几种发明方法，以及用于实现其的系统。 在一个方面，该方法包括在半导体衬底中形成第一多个注入区域，在注入区域上执行至少一个退火工艺，在退火工艺的至少一部分之后执行至少一个注入区域的散射测量 被执行以确定植入区域的轮廓并且基于所确定的植入区域的轮廓来确定退火过程的有效性。 在其他实施例中，退火工艺的一个或多个参数可以基于确定的退火工艺的效率在随后处理的衬底上变化。

公开(公告)号：US06562635B1

公开(公告)日：2003-05-13

申请号：US10083710

申请日：2002-02-26

Applicant: Kevin R. Lensing ,  James Broc Stirton ,  Matthew A. Purdy

Inventor： Kevin R. Lensing ,  James Broc Stirton ,  Matthew A. Purdy

IPC: H01L2100

CPC classification number: H01L21/67253 ,  G01N21/9501 ,  G01N21/956 ,  H01L22/34

Abstract: A method of using scatterometry measurements to determine and control conductive interconnect profiles is disclosed. In one embodiment, the method comprises providing a library of optical characteristic traces, each of which correspond to a grating structure comprised of a plurality of conductive interconnects having a known profile, providing a substrate having at least one grating structure formed thereabove, the formed grating structure comprised of a plurality of conductive interconnects having an unknown profile, and illuminating the formed grating structure. The method further comprises measuring light reflected off of the grating structure to generate an optical characteristic trace for the formed grating structure and determining a profile of the gate electrode structures comprising the formed grating structure by correlating the generated optical characteristic trace to an optical characteristic trace from the library. In another embodiment, the method disclosed herein comprises comparing a generated optical characteristic trace of conductive interconnects having an unknown profile to a target trace established for conductive interconnects having an ideal or acceptable profile.

Abstract translation: 公开了一种使用散射测量来确定和控制导电互连轮廓的方法。 在一个实施例中，该方法包括提供光学特征曲线库，每个光栅特征迹线对应于由具有已知轮廓的多个导电互连构成的光栅结构，提供具有形成在其上方的至少一个光栅结构的衬底，所形成的光栅 结构由具有未知轮廓的多个导电互连构成，并且照射所形成的光栅结构。 该方法还包括测量从光栅结构反射的光，以产生用于所形成的光栅结构的光学特征迹线，并通过将所产生的光学特性曲线与所形成的光学特征曲线相关联的光学特性曲线相关联来确定包括所形成的光栅结构的栅电极结构的轮廓 图书馆。 在另一个实施例中，本文公开的方法包括将具有未知轮廓的导电互连的所产生的光学特性曲线与为具有理想或可接受轮廓的导电互连建立的目标轨迹进行比较。

公开(公告)号：US20080147224A1

公开(公告)日：2008-06-19

申请号：US11539803

申请日：2006-10-09

Applicant: James Broc Stirton ,  Kevin R. Lensing ,  Richard P. Good

Inventor： James Broc Stirton ,  Kevin R. Lensing ,  Richard P. Good

IPC: G06F19/00

CPC classification number: G06Q50/04 ,  G06Q10/04 ,  Y02P90/30

Abstract: A method includes acquiring metrology data associated with a process. Bias information associated with the process is determined. The metrology data is adjusted based on the bias information to generate bias-adjusted metrology data. The bias-adjusted metrology data is filtered to identify and reject outlier data. The process is controlled based on the metrology data remaining after the rejection of the outlier data.

Abstract translation: 一种方法包括获取与过程相关联的度量数据。 确定与该过程相关的偏差信息。 基于偏差信息调整计量数据，以产生偏差调整的度量数据。 偏差调整后的测量数据被过滤以识别和排除异常值数据。 该过程基于在排除异常值数据之后剩余的测量数据进行控制。

公开(公告)号：US06927080B1

公开(公告)日：2005-08-09

申请号：US10281760

申请日：2002-10-28

Applicant: Homi E. Nariman ,  James Broc Stirton ,  Kevin R. Lensing ,  Steven P. Reeves

Inventor： Homi E. Nariman ,  James Broc Stirton ,  Kevin R. Lensing ,  Steven P. Reeves

IPC: H01L21/66 ,  H01L23/544

CPC classification number: H01L22/34 ,  G01R31/2858

Abstract: The present invention is generally directed to various structures for analyzing electromigration, and methods of using same. In one illustrative embodiment, the method includes forming a grating structure above a semiconducting substrate, the grating structure being comprised of a plurality of conductive features, forcing an electrical current through at least one of the conductive features until a resistance of the conductive feature increases by a preselected amount, and performing at least one scatterometric measurement of the conductive feature to determine a critical dimension of the conductive feature. In another illustrative embodiment, the method includes forming a plurality of grating structures above a semiconducting substrate, each of the grating structures being comprised of a plurality of conductive features having the same critical dimension, the critical dimension of the features of each of the plurality of grating structures being different, and forcing an electrical current through at least one of the conductive features in each of the plurality of grating structures until a resistance of the conductive feature increases by a preselected amount.

Abstract translation: 本发明一般涉及用于分析电迁移的各种结构及其使用方法。 在一个说明性实施例中，该方法包括在半导体衬底之上形成光栅结构，该光栅结构由多个导电特征组成，迫使电流通过至少一个导电特征直到导电特征的电阻增加 预选量，以及执行导电特征的至少一个散射测量以确定导电特征的临界尺寸。 在另一说明性实施例中，该方法包括在半导体衬底之上形成多个光栅结构，每个光栅结构由具有相同临界尺寸的多个导电特征组成，多个 光栅结构不同，并且迫使电流通过多个光栅结构中的每一个中的导电特征中的至少一个，直到导电特征的电阻增加预选量。

公开(公告)号：US06643008B1

公开(公告)日：2003-11-04

申请号：US10083699

申请日：2002-02-26

Applicant: James Broc Stirton ,  Kevin R. Lensing

Inventor： James Broc Stirton ,  Kevin R. Lensing

IPC: G01N2100

CPC classification number: G03F7/70616 ,  G01N21/95684 ,  G03F7/70625 ,  G03F7/7065 ,  H01L22/20

Abstract: The present invention is generally directed to various methods of detecting degradation in photolithography processes based upon scatterometric measurements of grating structures, and a device comprising such structures. In one embodiment, the method comprises providing a wafer comprised of a plurality of grating structures, each of the grating structures being comprised of a plurality of features, each of the grating structures having a different critical dimension, illuminating at least one of the grating structures, measuring light reflected off of at least one of the grating structures to generate an optical characteristic trace for the grating structure, and determining the presence of residual photoresist material between the features of the grating structure by comparing the generated optical characteristic trace to at least one optical characteristic trace from a library. In some embodiments, the grating structures are arranged in a linear array. In one illustrative embodiment, the device comprises a wafer and a plurality of grating structures formed above the wafer, each of the grating structures having a different critical dimension, and at least one of the grating structures having a critical dimension that is less than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.

Abstract translation: 本发明一般涉及基于光栅结构的散射测量的检测光刻工艺中的劣化的各种方法，以及包括这种结构的器件。 在一个实施例中，该方法包括提供由多个光栅结构组成的晶片，每个光栅结构由多个特征组成，每个光栅结构具有不同的临界尺寸，照亮光栅结构中的至少一个 测量从所述光栅结构中的至少一个反射的光以产生用于所述光栅结构的光学特征迹线，以及通过将所生成的光学特性曲线与所述光栅结构的至少一个比较来确定所述光栅结构的特征之间的剩余光致抗蚀剂材料的存在 图书馆的光学特征曲线。 在一些实施例中，光栅结构被布置成线性阵列。 在一个说明性实施例中，该器件包括晶片和形成在晶片上方的多个光栅结构，每个光栅结构具有不同的临界尺寸，并且至少一个光栅结构具有小于预期的临界尺寸 要在晶圆上形成的集成电路器件的关键尺寸范围。

公开(公告)号：US06623994B1

公开(公告)日：2003-09-23

申请号：US10255509

申请日：2002-09-26

Applicant: James Broc Stirton

Inventor： James Broc Stirton

IPC: H01L2166

CPC classification number: G01N21/274 ,  G01B11/00

Abstract: The present invention is generally directed to various methods for calibrating optical-based metrology tools. In one illustrative embodiment, the method comprises performing a metrology process on a specimen using an optical-based metrology tool to obtain optical characteristic data and comparing the obtained optical characteristic data to target optical characteristic data established for the specimen.

Abstract translation: 本发明一般涉及用于校准基于光学的计量工具的各种方法。 在一个说明性实施例中，该方法包括使用基于光学的计量工具对样本进行计量过程以获得光学特性数据，并将获得的光学特征数据与为样本建立的目标光学特性数据进行比较。

公开(公告)号：US06582863B1

公开(公告)日：2003-06-24

申请号：US09879751

申请日：2001-06-11

Applicant: James Broc Stirton ,  Kevin R. Lensing

Inventor： James Broc Stirton ,  Kevin R. Lensing

IPC: G03F900

CPC classification number: G03F7/70616 ,  G03F7/7065

Abstract: The present invention is generally directed to a method of controlling photolithography processes based upon scatterometric measurements of sub-nominal grating structures, and a system for accomplishing same. In one embodiment, the method comprises providing a library of optical characteristic traces, each of which corresponds to a sub-nominal grating structure comprised of a plurality of photoresist features having a known degree of residual photoresist material positioned between the photoresist features, forming a process layer above a semiconducting substrate, and forming a layer of photoresist above the process layer. The method further comprises forming at least one sub-nominal grating structure in the layer of photoresist, the sub-nominal grating structure being comprised of a plurality of photoresist features, illuminating the formed sub-nominal grating structure, measuring light reflected off of the formed sub-nominal grating structure to generate an optical characteristic trace for the formed sub-nominal grating structure, and determining the presence of residual photoresist material between the features of the formed sub-nominal grating structure by comparing the generated optical characteristic trace to at least one optical characteristic trace from the library.

Abstract translation: 本发明一般涉及一种基于次标称光栅结构的散射测量来控制光刻工艺的方法，以及用于实现其的系统。 在一个实施例中，该方法包括提供光学特性迹线库，每个光学特征迹线对应于由多个光致抗蚀剂特征组成的亚标称光栅结构，该光刻胶特征具有定位在光致抗蚀剂特征之间的已知程度的残留光致抗蚀剂材料，形成工艺 层，并且在工艺层上形成一层光致抗蚀剂。 该方法还包括在光致抗蚀剂层中形成至少一个次标称光栅结构，子标称光栅结构由多个光致抗蚀剂特征组成，照射形成的次标称光栅结构，测量从所形成 亚标称光栅结构，以产生用于形成的次标称光栅结构的光学特征迹线，以及通过将所生成的光学特征曲线与至少一个标称光栅结构进行比较来确定所形成的次标称光栅结构的特征之间的残留光致抗蚀剂材料的存在 图书馆的光学特征曲线。

公开(公告)号：US06479200B1

公开(公告)日：2002-11-12

申请号：US09838013

申请日：2001-04-19

Applicant: James Broc Stirton

Inventor： James Broc Stirton

IPC: G03K722

CPC classification number: G03F7/70616

Abstract: A method of using scatterometric techniques to control stepper process is disclosed. In one illustrative embodiment, the method comprises providing a library of optical characteristic traces, each of which corresponds to a grating structure comprised of a plurality of photoresist features having a known profile, and forming at least one grating structure in a layer of photoresist, wherein the formed grating structure is comprised of a plurality of photoresist features having an unknown profile. The method further comprises illuminating the formed grating structure, measuring light reflected off of the formed grating structure to generate an optical characteristic trace for the formed grating structure, comparing the generated optical characteristic trace to at least one optical characteristic trace from the library, and modifying at least one parameter of a stepper exposure process to be performed on at least one subsequently processed wafer based upon the comparison of the generated optical characteristic trace and the optical characteristic trace from the library. In another embodiment, the generated optical characteristic trace for the grating structure is compared to a target optical characteristic trace for the grating structure, and at least one parameter of an exposure process to be performed on a layer of photoresist formed on a subsequently processed wafer may be determined or modified based upon this comparison.

Abstract translation: 公开了使用散射测量技术来控制步进过程的方法。 在一个说明性实施例中，该方法包括提供光学特性迹线库，每个光栅特征迹线对应于由具有已知轮廓的多个光刻胶特征组成的光栅结构，并且在光致抗蚀剂层中形成至少一个光栅结构，其中 形成的光栅结构由具有未知轮廓的多个光致抗蚀剂特征组成。 该方法还包括照射所形成的光栅结构，测量从所形成的光栅结构反射的光，以产生用于所形成的光栅结构的光学特征迹线，将所生成的光学特性曲线与来自库的至少一个光学特性曲线进行比较，以及修改 基于所生成的光学特性曲线和来自图书馆的光学特性曲线的比较，将对至少一个后续处理的晶片执行步进曝光处理的至少一个参数。 在另一个实施例中，将所生成的光栅结构的光学特征曲线与用于光栅结构的目标光学特性曲线进行比较，并且对在后续处理的晶片上形成的光致抗蚀剂层上执行的曝光工艺的至少一个参数可以 基于此比较确定或修改。