摘要:
The display device includes a backlight unit including a field sequential light source operated using a sequential partition method and an optical shutter using an electrowetting phenomenon disposed on a light emitting surface of the backlight unit and switching light outputted from the backlight unit.
摘要:
An electrowetting lens which can move its optical axis using a multiple electrode structure includes: a substrate; a dielectric barrier wall formed on the substrate; polar and non-polar solutions fluidly contained inside the dielectric barrier wall; first and second lower electrodes inserted through lower portions of the dielectric barrier wall in contact with the polar solution, the first and second lower electrodes facing each other; and first and second multiple electrodes respectively disposed in mutually facing first and second legs defining the dielectric barrier wall, each of the first and second multiple electrodes being divided into a plurality of vertically arranged electrode cells.
摘要:
According to example embodiments, a separation membrane includes a graphene on at least one surface of a polymer support. The graphene may include a plurality of grains defined by grain boundaries.
摘要:
A method of selectively growing a plurality of semiconductor carbon nanotubes using light irradiation. The method includes disposing a plurality of nanodots, which include a catalyst material, on a substrate; growing a plurality of carbon nanotubes from the plurality of nanodots, and irradiating light onto the nanodot to selectively grow the plurality of semiconductor carbon nanotubes.
摘要:
Disclosed herein is a reduced graphene oxide doped with a dopant, and a thin layer, a transparent electrode, a display device and a solar cell including the reduced graphene oxide. The reduced graphene oxide doped with a dopant includes an organic dopant and/or an inorganic dopant.
摘要:
An organic light emitting device including graphene. The organic light emitting device includes a first electrode that is interposed between a transparent substrate and an organic layer emitting light, and includes graphene having a thickness of about 0.1 nanometer (nm) to about 10 nanometers (nm).
摘要:
A transistor includes at least three terminals comprising a gate electrode, a source electrode and a drain electrode, an insulating layer disposed on a substrate, and a semiconductor layer disposed on the substrate, wherein a current which flows between the source electrode and the drain electrode is controlled by application of a voltage to the gate electrode, where the semiconductor layer includes a graphene layer and at least one of a metal atomic layer and a metal ion layer, and where the metal atomic layer or the metal ion layer is interposed between the graphene layer and the insulating layer.
摘要:
Provided is a method of modifying carbon nanotubes, the method including: preparing a mixed solution in which a radical initiator and a carbon nanotube are dispersed; applying energy to the mixed solution to decompose the radical initiator into a radical; and reacting the decomposed radical with a surface of the carbon nanotube, wherein the radical which has reacted with the carbon nanotube is detached from the carbon nanotube after the reaction with the carbon nanotube. In the method of modifying carbon nanotube, a radical is reacted with a carbon nanotube and then separated from the carbon nanotube to thus modify the surface of the carbon nanotube without chemical bonding. Accordingly, the conductivity of the carbon nanotube can be increased.
摘要:
According to some embodiments, a semiconductor device includes first and second auxiliary gate electrodes and a semiconductor layer crossing the first and second auxiliary gate electrodes. A primary gate electrode is provided on the semiconductor layer so that the semiconductor layer is between the primary gate electrode and the first and second auxiliary gate electrodes. Moreover, the first and second auxiliary gate electrodes are configured to induce respective first and second field effect type source/drain regions in the semiconductor layer. Related methods are also discussed.
摘要:
A layered structure including graphene, wherein a basal plane of the graphene is a (0001) plane; and a layer including an organic material having a conjugated system disposed on the graphene, wherein the layer comprising the organic material layer having the conjugated system is bound to the (0001) plane of the graphene by a π-π interaction, and a method of preparing the same.