公开(公告)号：US07903187B2

公开(公告)日：2011-03-08

申请号：US11635501

申请日：2006-12-08

申请人： Hyun Soo Shin ,  Yeon Gon Mo ,  Jae Kyeong Jeong ,  Se Yeoul Kwon

发明人： Hyun Soo Shin ,  Yeon Gon Mo ,  Jae Kyeong Jeong ,  Se Yeoul Kwon

IPC分类号： G02F1/1333 ,  H01L27/13

CPC分类号： H01L27/0248 ,  G02F1/136204 ,  H01L27/12 ,  H01L27/3244 ,  H01L27/3276

摘要： A static electricity preventing assembly for an electronic device, may include a substrate, a buffer layer on the substrate, the buffer layer including a plurality of contact holes exposing respective regions of the substrate, a shorting bar on the buffer layer, pad electrodes on the buffer layer, metal wiring lines on the buffer layer, wherein a first portion of each of the metal wiring lines may be electrically connected to the substrate through the contact holes, a second portion of each of the metal wiring lines may be connected to a respective one of the pad electrodes, and a third portion of each of the metal wiring lines may be connected to the shorting bar, wherein the first portion may be between the second portion and the third portion.

摘要翻译： 一种用于电子设备的静电防止组件可以包括衬底，衬底上的缓冲层，缓冲层包括暴露衬底各自区域的多个接触孔，缓冲层上的短路棒， 缓冲层，缓冲层上的金属布线，其中每个金属布线的第一部分可以通过接触孔电连接到基板，每个金属布线的第二部分可以连接到相应的 焊盘电极中的一个，并且每个金属布线的第三部分可以连接到短路棒，其中第一部分可以在第二部分和第三部分之间。

公开(公告)号：US07803699B2

公开(公告)日：2010-09-28

申请号：US11507606

申请日：2006-08-22

申请人： Jae Kyeong Jeong ,  Hyun Soo Shin ,  Yeon Gon Mo

发明人： Jae Kyeong Jeong ,  Hyun Soo Shin ,  Yeon Gon Mo

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/66765

摘要： A polysilicon thin film transistor (TFT) may include a substrate, at least one insulating layer, a semiconductor layer, a gate electrode, a source electrode, a drain electrode, and a heat retaining layer formed to contact the semiconductor layer. The heat retaining layer may reduce and/or prevent a reduction in a melt duration time of amorphous silicon during a crystallization process for forming a polysilicon layer of the TFT.

摘要翻译： 多晶硅薄膜晶体管（TFT）可以包括基板，至少一个绝缘层，半导体层，栅电极，源电极，漏电极和形成为接触半导体层的保温层。 在用于形成TFT的多晶硅层的结晶工艺期间，保温层可以减少和/或防止非晶硅的熔融持续时间的减少。

公开(公告)号：US07463399B2

公开(公告)日：2008-12-09

申请号：US11528414

申请日：2006-09-28

申请人： Hyun Soo Shin ,  Jae Kyeong Jeong ,  Yeon Gon Mo ,  Dong Un Jin

发明人： Hyun Soo Shin ,  Jae Kyeong Jeong ,  Yeon Gon Mo ,  Dong Un Jin

IPC分类号： G02F1/15 ,  G02F1/153 ,  G09G3/34 ,  G09G5/00

CPC分类号： H01L27/3244 ,  G02F1/167 ,  G02F2001/133342 ,  H01L27/3232 ,  H01L2251/5323

摘要： The flat panel display includes an electrochromic device that is a controlling unit. The electrochromic device reversibly makes electrolytic oxidizing and reducing reactions so that coloring and decoloring can be made reversibly, when voltage is applied. With such the construction, the flat panel display controls the voltage applied to the electrochromic device, enabling to selectively display an image on front side or two sides.

摘要翻译： 平板显示器包括作为控制单元的电致变色装置。 电致变色装置可逆地进行电解氧化和还原反应，使得当施加电压时可以可逆地着色和脱色。 通过这样的结构，平板显示器控制施加到电致变色装置的电压，能够在前侧或两侧选择性地显示图像。

公开(公告)号：US07663302B2

公开(公告)日：2010-02-16

申请号：US11493576

申请日：2006-07-27

申请人： Hyun Soo Shin ,  Jae Kyeong Jeong ,  Yeon Gon Mo ,  Dong Un Jin

发明人： Hyun Soo Shin ,  Jae Kyeong Jeong ,  Yeon Gon Mo ,  Dong Un Jin

IPC分类号： H05B33/00

CPC分类号： H01L51/5281 ,  H01L27/3244 ,  H01L2251/5323

摘要： An Organic Light Emitting Display (OLED) and its method of fabrication includes: a transparent substrate; a photochromatic layer formed on a first surface of the transparent substrate; at least one transparent Thin Film Transistor (TFT) formed on a first surface of the transparent substrate, and an organic light emitting device formed on and electrically connected to the transparent TFT.

摘要翻译： 有机发光显示器（OLED）及其制造方法包括：透明基板; 在所述透明基板的第一表面上形成的色素层; 形成在透明基板的第一表面上的至少一个透明薄膜晶体管（TFT）和形成在透明TFT上并电连接到透明TFT的有机发光器件。

公开(公告)号：US07655951B2

公开(公告)日：2010-02-02

申请号：US11433177

申请日：2006-05-12

申请人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Yeon Gon Mo

发明人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Yeon Gon Mo

IPC分类号： H01L29/786

CPC分类号： H01L29/78603 ,  H01L29/66757 ,  H01L29/78675

摘要： A thin film transistor and a method for manufacturing the same capable of reducing a change in a threshold voltage of the thin film transistor formed on a flexible substrate. The thin film transistor includes: a substrate, the substrate being flexible; a buffer layer having a low dielectric constant from about 1.2 to about 4.0 and formed on the substrate; a semiconductor layer formed on the buffer layer; a gate electrode; first insulation layer formed between the gate electrode and the semiconductor layer; a second insulation layer formed on the semiconductor layer and the gate electrode; and a source/drain electrode electrically connected to the semiconductor layer through a contact hole formed in the second insulation layer. Therefore, the thin film transistor can reduce a change in its threshold voltage, thereby reducing changes in brightness, gray scale, contrast, etc., of light-emitting devices using the thin film transistor.

摘要翻译： 一种薄膜晶体管及其制造方法，能够减小形成在柔性基板上的薄膜晶体管的阈值电压的变化。 所述薄膜晶体管包括：基板，所述基板是柔性的; 缓冲层，其介电常数为约1.2至约4.0，并形成在基底上; 形成在缓冲层上的半导体层; 栅电极; 形成在所述栅电极和所述半导体层之间的第一绝缘层; 形成在所述半导体层和所述栅电极上的第二绝缘层; 以及源极/漏极，其通过形成在第二绝缘层中的接触孔与半导体层电连接。 因此，薄膜晶体管可以减小其阈值电压的变化，从而减少使用薄膜晶体管的发光器件的亮度，灰度，对比度等的变化。

公开(公告)号：US07995023B2

公开(公告)日：2011-08-09

申请号：US11478169

申请日：2006-06-28

申请人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Se Yeoul Kwon ,  Yeon Gon Mo ,  Keum Nam Kim

发明人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Se Yeoul Kwon ,  Yeon Gon Mo ,  Keum Nam Kim

IPC分类号： G09G3/38

CPC分类号： G02F1/13458 ,  G02F1/13452 ,  G02F1/1362 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/3276 ,  H01L29/78648 ,  H01L51/52

摘要： A flat panel display and method for driving the same. The flat panel display includes a conductive substrate forming an image display unit having at least one thin film transistor and a pad unit including a plurality of terminals, wherein the conductive substrate is laminated with a plurality of insulating layers to form the image display unit and the pad unit; a substrate-exposing part for exposing the conductive substrate is formed by removing at least one area of the insulating layers formed on the pad unit; a system control panel for supplying a reverse bias voltage through the substrate-exposing part, wherein the system control panel is electrically connected with the pad unit; and a metal member for transferring the reverse bias voltage to the conductive substrate, wherein the metal member is formed between the substrate-exposing part and the system control panel.

摘要翻译： 一种平板显示器及其驱动方法。 平板显示器包括形成具有至少一个薄膜晶体管的图像显示单元的导电基板和包括多个端子的焊盘单元，其中导电基板层叠有多个绝缘层以形成图像显示单元，并且 垫单位 通过去除在衬垫单元上形成的绝缘层的至少一个区域来形成用于暴露导电衬底的衬底暴露部分; 用于通过所述衬底暴露部分提供反向偏置电压的系统控制面板，其中所述系统控制面板与所述衬垫单元电连接; 以及用于将所述反向偏置电压传送到所述导电基板的金属构件，其中所述金属构件形成在所述基板曝光部和所述系统控制面板之间。

公开(公告)号：US07727823B2

公开(公告)日：2010-06-01

申请号：US11477101

申请日：2006-06-27

申请人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Se Yeoul Kwon ,  Yeon Gon Mo ,  Keum Nam Kim

发明人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Se Yeoul Kwon ,  Yeon Gon Mo ,  Keum Nam Kim

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/78603 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78606 ,  H01L29/78648

摘要： A flat panel display for preventing a thin film transistor from deteriorating due to voltage, static electricity, and external force, accidentally applied to a substrate, and a method for driving the same. The flat panel display includes a conductive substrate, at least one insulating layer formed on the conductive substrate, at least one thin film transistor formed on the conductive substrate, and a ground formed in a region of the conductive substrate to ground the conductive substrate. Thus, the deterioration of the thin film transistor that would be generated by voltage, static electricity, or external force, accidentally applied to the conductive substrate can be substantially prevented and the performance of the display is enhanced.

摘要翻译： 用于防止薄膜晶体管由于电压，静电和外力而意外施加到基板的劣化的平板显示器及其驱动方法。 平板显示器包括导电基板，形成在导电基板上的至少一个绝缘层，形成在导电基板上的至少一个薄膜晶体管，以及形成在导电基板的区域中的接地导电基板的接地。 因此，可以基本上防止意外地施加到导电基板上的由电压，静电或外力产生的薄膜晶体管的劣化，从而提高显示器的性能。

公开(公告)号：US07868327B2

公开(公告)日：2011-01-11

申请号：US11508530

申请日：2006-08-22

申请人： Jae Kyeong Jeong ,  Hyun Soo Shin ,  Se Yeoul Kwon ,  Yeon Gon Mo

发明人： Jae Kyeong Jeong ,  Hyun Soo Shin ,  Se Yeoul Kwon ,  Yeon Gon Mo

IPC分类号： H01L29/04

CPC分类号： H01L29/78603 ,  H01L29/66757

摘要： A thin film transistor (TFT) and a method of manufacturing the same, and more particularly, a TFT for reducing leakage current and a method of manufacturing the same are provided. The TFT includes a flexible substrate, a diffusion preventing layer formed on the flexible substrate, a buffer layer formed of at least two insulated materials on the diffusion preventing layer, a semiconductor layer formed on a region of the buffer layer to include a channel layer and a source and drain region, a gate insulating layer formed on the buffer layer including the semiconductor layer, a gate electrode formed on the gate insulating layer in a region corresponding to the channel layer, an interlayer insulating layer formed on the gate insulating layer including the gate electrode, and source and drain electrodes formed in the interlayer insulating layer to include a predetermined contact hole that exposes at least a region of the source and drain region and to be connected to the source and drain region.

摘要翻译： 提供一种薄膜晶体管（TFT）及其制造方法，更具体地说，提供了一种用于减小漏电流的TFT及其制造方法。 TFT包括柔性基板，形成在柔性基板上的扩散防止层，由扩散防止层上的至少两个绝缘材料形成的缓冲层，形成在缓冲层的包括沟道层的区域上的半导体层，以及 源极和漏极区域，形成在包括半导体层的缓冲层上的栅极绝缘层，形成在与沟道层对应的区域中的栅极绝缘层上的栅极电极，形成在栅极绝缘层上的层间绝缘层， 栅极电极和形成在层间绝缘层中的源电极和漏电极，以包括预定的接触孔，其暴露出源极和漏极区域的至少一部分并连接到源极和漏极区域。

公开(公告)号：US07551255B2

公开(公告)日：2009-06-23

申请号：US11486595

申请日：2006-07-13

申请人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Yeon Gon Mo ,  Jong Han Jeong ,  Hun Jung Lee ,  Sung Jin Kim

发明人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Yeon Gon Mo ,  Jong Han Jeong ,  Hun Jung Lee ,  Sung Jin Kim

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/78603 ,  G02F1/13454 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/3244 ,  H01L2251/5338

摘要： An organic light emitting display device including a flexible substrate and a plurality of thin film transistors (TFTs) formed on the substrate. The plurality of TFTs formed on the substrate include a pixel transistor for driving a pixel and a driver circuit transistor for driving a driver circuit, and a longitudinal direction of a channel region of the pixel transistor makes a first predetermined angle with a direction in which the substrate is bent. As such, it is possible to minimize a change in the electrical property of the TFTs formed on the flexible substrate and to thus reduce a change in the amount of current that flows in the channels of the TFTs.

摘要翻译： 一种有机发光显示装置，包括形成在基板上的柔性基板和多个薄膜晶体管（TFT）。 形成在基板上的多个TFT包括用于驱动像素的像素晶体管和用于驱动驱动电路的驱动电路晶体管，像素晶体管的沟道区的纵向方向与第 基板弯曲。 因此，可以使形成在柔性基板上的TFT的电性能的变化最小化，从而减小在TFT的沟道中流动的电流量的变化。

公开(公告)号：US20070188087A1

公开(公告)日：2007-08-16

申请号：US11638792

申请日：2006-12-14

申请人： Se Yeoul Kwon ,  Hyun Soo Shin ,  Jae Kyeong Jeong

发明人： Se Yeoul Kwon ,  Hyun Soo Shin ,  Jae Kyeong Jeong

IPC分类号： H05B33/00 ,  H01J1/62

CPC分类号： H01L51/52 ,  H01L27/3244 ,  H01L2251/5338

摘要： An organic light emitting display device which can prevent separation of a buffer layer, thereby reducing an electrical short is disclosed. One embodiment of the organic light emitting display device includes a substrate made of a metal, a metal thin film formed on the substrate, a buffer layer formed on the metal thin film, and an organic light emitting diode formed on the buffer layer. Accordingly, a leakage current caused by an electrical short can be effectively prevented by preventing the separation of the buffer layer.

摘要翻译： 公开了一种能够防止缓冲层分离从而减少电短路的有机发光显示装置。 有机发光显示装置的一个实施例包括由金属制成的基板，形成在基板上的金属薄膜，形成在金属薄膜上的缓冲层和形成在缓冲层上的有机发光二极管。 因此，通过防止缓冲层的分离，可以有效地防止由电气短路引起的漏电流。