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    Light absorbent agent polymer useful for organic anti-reflective coating, its preparation method and organic anti-reflective coating composition comprising the same
    1.
    发明授权
    Light absorbent agent polymer useful for organic anti-reflective coating, its preparation method and organic anti-reflective coating composition comprising the same 失效
    用于有机抗反射涂层的光吸收剂聚合物，其制备方法和包含其的有机抗反射涂料组合物

    公开(公告)号：US07186496B2

    公开(公告)日：2007-03-06

    申请号：US10963316

    申请日：2004-10-12

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Young-Sik Kim

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Young-Sik Kim

    IPC分类号： G03C1/825 ,  G03C1/835 ,  G03F7/09 ,  G03F7/36 ,  C08F22/06 ,  C08F22/40

    CPC分类号： H01L21/0276 ,  C09D179/08 ,  G03F7/091

    摘要： Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of the bottom film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

    摘要翻译： 公开了一种用于有机抗反射涂层的光吸收剂聚合物，其可以防止底部薄膜层或基底的扩散光反射，并减少由光致抗蚀剂本身的厚度变化引起的驻波，从而增加光致抗蚀剂图案的均匀性 通过在制造半导体器件的工艺中使用193nm的ArF，形成用于光刻的超精细图案的光刻胶的方法及其制备方法。 此外，本发明公开了一种有机抗反射涂层组合物，其包含用于有机抗反射涂层的光吸收剂聚合物和使用该涂料组合物的图案形成方法。

    Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same
    2.
    发明授权
    Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same 失效
    使用用于光刻胶的顶涂组合物和由其形成的产品形成精细图案的方法

    公开(公告)号：US07329477B2

    公开(公告)日：2008-02-12

    申请号：US10993869

    申请日：2004-11-19

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Cha Won Koh ,  Sung Eun Hong ,  Geun Su Lee ,  Min Ho Jung ,  Ki Ho Baik

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/11 ,  G03F7/0045

    摘要： The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).

    摘要翻译： 本发明提供了使用胺类污染物保护性顶涂层组合物的方法。 优选地，本发明的胺污染保护性顶涂剂组合物包含胺污染保护化合物。 有用的胺污染保护化合物包括胺衍生物; 氨基酸衍生物; 酰胺衍生物; 氨基甲酸酯衍生物; 尿素衍生物; 的盐; 及其混合物。 本发明的胺污染保护性顶涂剂组合物由于后曝光延迟效应而降低或消除诸如T形顶部的问题和/或由于与常规光刻工艺相关的酸扩散而难以形成低于100nm的精细图案 涉及使用诸如KrF（248nm），ArF（193nm），F 2 N（157nm），电子束，离子束等的光源的含有脂环族主链的光致抗蚀剂聚合物 紫外线（EUV）。

    Light absorbent agent polymer useful for organic anti-reflective coating, its preparation method and organic anti-reflective coating composition comprising the same
    3.
    发明授权
    Light absorbent agent polymer useful for organic anti-reflective coating, its preparation method and organic anti-reflective coating composition comprising the same 失效
    用于有机抗反射涂层的光吸收剂聚合物，其制备方法和包含其的有机抗反射涂料组合物

    公开(公告)号：US07285370B2

    公开(公告)日：2007-10-23

    申请号：US10963129

    申请日：2004-10-12

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Jin-soo Kim

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Jin-soo Kim

    IPC分类号： C03C1/825 ,  C08F122/04

    CPC分类号： G02B1/111 ,  C09D135/00 ,  G03F7/091 ,  Y10T428/12528

    摘要： Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by a variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor devices, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising a light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

    摘要翻译： 公开了一种用于有机抗反射涂层的光吸收剂聚合物，其可以防止底部薄膜层或基底的扩散光反射，并减少由光致抗蚀剂本身的厚度变化引起的驻波，从而提高光致抗蚀剂图案的均匀性， 其制造半导体装置的制造方法中使用193nm的ArF，形成用于光刻的光刻胶的超微细图案的方法及其制备方法。 此外，本发明公开了一种有机抗反射涂层组合物，其包含用于有机抗反射涂层的光吸收剂聚合物和使用该涂料组合物的图案形成方法。

    Photoresist cross-linker and photoresist composition comprising the same
    4.
    发明授权
    Photoresist cross-linker and photoresist composition comprising the same 失效
    光阻抗交联剂和包含其的光致抗蚀剂组合物

    公开(公告)号：US06322948B1

    公开(公告)日：2001-11-27

    申请号：US09499231

    申请日：2000-02-07

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Jin Soo Kim ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Jin Soo Kim ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： G03F7/0382 ,  Y10S430/128

    摘要： The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF (248 nm), ArF (193 nm), E-beam, ion-beam or EUV light sources.

    摘要翻译： 本发明涉及选自由以下化学式1表示的交联剂单体和其均聚物和共聚物的光致抗蚀剂交联剂。 这种交联剂适用于采用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺。<化学式1>

    Photoresist cross-linker and photoresist composition comprising the same
    5.
    发明授权
    Photoresist cross-linker and photoresist composition comprising the same 失效
    光阻抗交联剂和包含其的光致抗蚀剂组合物

    公开(公告)号：US06312868B1

    公开(公告)日：2001-11-06

    申请号：US09501096

    申请日：2000-02-09

    申请人： Keun Kyu Kong ,  Jae Chang Jung ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

    发明人： Keun Kyu Kong ,  Jae Chang Jung ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/038

    摘要： The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF(248nm), ArF(193nm), E-beam, ion-beam or EUV light sources. wherein X1 and X2 individually represent CH2, CH2CH2, O or S; p and s individually represent an integer from 0 to 5; q is 0 or 1; R′ and R″ independently represent hydrogen or methyl; R represents straight or branched C1-10 alkyl, straight or branched C1-10 ether, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ether including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R1 and R2 independently represent hydrogen, straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group.

    摘要翻译： 本发明涉及选自由以下化学式1表示的交联剂单体和其均聚物和共聚物的光致抗蚀剂交联剂。 这种交联剂适用于采用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺.X1和X2分别表示CH2，CH2CH2，O或S; p和s各自表示0至5的整数; q为0或1; R'和R“独立地表示氢或甲基; R代表直链或支链C 1-10烷基，直链或支链C1-10醚，直链或支链C1-10酯，直链或支链C 1-10酮，直链或支链C 1-10羧酸，直链或支链C 1-10缩醛 包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10醚，包括至少一个羟基的直链或支链C 1-10酯，直链或支链C 1-10酮 包括至少一个羟基，包括至少一个羟基的直链或支链C 1-10羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; R 1和R 2独立地表示氢，直链或支链C 1-10烷基，直链或支链C 1-10酯，直链或支链C 1-10酮，直链或支链C 1-10羧酸，直链或支链C 1-10缩醛，直链或 包括至少一个羟基的支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酯，包括至少一个羟基，直链或支链C 1-10羧酸的直链或支链C 1-10酮包括 至少一个羟基，以及包含至少一个羟基的直链或支链C 1-10缩醛。

    Liquid Composition for Immersion Lithography and Lithography Method Using the Same
    9.
    发明申请
    Liquid Composition for Immersion Lithography and Lithography Method Using the Same 审中-公开
    用于浸没光刻的液体组合物和使用其的平版印刷方法

    公开(公告)号：US20080176047A1

    公开(公告)日：2008-07-24

    申请号：US11767275

    申请日：2007-06-22

    申请人： Keun Kyu Kong ,  Hyoung Ryeun Kim ,  Hyeong Soo Kim ,  Jae Chang Jung ,  Sung Koo Lee

    发明人： Keun Kyu Kong ,  Hyoung Ryeun Kim ,  Hyeong Soo Kim ,  Jae Chang Jung ,  Sung Koo Lee

    IPC分类号： G03C1/73 ,  B41M5/00 ,  G03F7/26 ,  G03B27/42

    CPC分类号： G03F7/2041 ,  G03F7/70341 ,  Y10T428/24802

    摘要： Disclosed herein are a liquid composition for immersion lithography and a lithography method using the composition. The liquid composition includes at least one nonionic surfactant selected from the group comprising of a polyvinyl alcohol, a pentaerythritol-based compound, a polymer containing an alkylene oxide, and a compound represented by Formula I: wherein R is a linear or branched, substituted C1-C40 alkyl, and n is an integer ranging from 10 to 10,000. The surface tension of the liquid composition is reduced by the nonionic surfactant, thereby solving the problem that the liquid composition is not completely filled or is partially concentrated on a wafer having a fine topology and removing micro bubbles between the photoresist film and the liquid composition.

    摘要翻译： 本文公开了用于浸没式光刻的液体组合物和使用该组合物的光刻方法。 液体组合物包含至少一种非离子表面活性剂，其选自聚乙烯醇，季戊四醇基化合物，含有烯化氧的聚合物和由式I表示的化合物：其中R是直链或支链的取代的C C 1 -C 40烷基，n是10至10,000的整数。 通过非离子表面活性剂降低液体组合物的表面张力，从而解决液体组合物未完全填充或部分浓缩在具有细微拓扑结构的晶片上并且去除光致抗蚀剂膜和液体组合物之间的微小气泡的问题。