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公开(公告)号：US20200168752A1
公开(公告)日：2020-05-28
申请号：US16612369
申请日：2018-07-11
发明人： Hyun Kyo SHIN , Duck Ho KIM , Yong Hyun KIM , Chang Su MHA , Kyung In MIN , Chang Kyun PARK , Jung Kyun LEE
IPC分类号： H01L31/0468 , H01L31/0465
摘要： The present inventive concept relates to a thin film type solar cell including a plurality of unit cells serially connected to one another on a substrate; and a light transmission part provided in the plurality of unit cells, wherein the light transmission part is provided in a discontinuous rectilinear structure including at least one disconnection part.According to the present inventive concept, since the light transmission part is discontinuously formed, the repetition characteristic of the light transmission part including a plurality of dot patterns may be reduced, thereby effectively solving a problem where a wave pattern such as a moire phenomenon occurs when light is passing through the light transmission part.
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公开(公告)号：US20190035959A1
公开(公告)日：2019-01-31
申请号：US15735599
申请日：2016-06-10
发明人： Yong Hyun KIM , Chang Kyun PARK , Young Gi KIM , Duck Ho KIM , Kyung In MIN , Sang Su CHOI
IPC分类号： H01L31/0463 , H01L31/0465 , H01L31/0224 , H01L31/0376
摘要： Disclosed is a thin film type solar cell which prevents short circuit from occurring between a first electrode and a second electrode due to a burr produced in a separation part, thereby preventing an output from being reduced. The thin film type solar cell includes a substrate, a first electrode disposed over the substrate and being apart from an adjacent first electrode by a first separation part, a semiconductor layer disposed over the first electrode and being apart from an adjacent semiconductor layer by a contact part and a second separation part, and a second electrode disposed over the semiconductor layer and being apart from an adjacent second electrode by the second separation part. The semiconductor layer contacts the substrate through the first separation part, and the second electrode contacts the first electrode through the contact part. A height of a burr produced in the second separation part is lower than a height between the first electrode and the second electrode.
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公开(公告)号：US20170194523A1
公开(公告)日：2017-07-06
申请号：US15117113
申请日：2015-01-07
IPC分类号： H01L31/0468 , H02S20/22 , H01L31/0216 , H02S40/42 , H01L31/0224 , H01L31/05
CPC分类号： H01L31/0468 , H01L31/02168 , H01L31/022475 , H01L31/022483 , H01L31/046 , H01L31/0512 , H02S20/22 , H02S40/42 , Y02B10/10 , Y02E10/50
摘要： Disclosed are a photovoltaic with improved visibility, which can improve optical-to-electric conversion efficiency and can be applied to a window of a building or a view window of a moving means such as a vehicle, and a method of manufacturing the same. The photovoltaic includes a transparent substrate, a transparent electrode formed on one surface of the transparent substrate, a plurality of photovoltaic cells configured to each include a first electrode formed on the transparent electrode, an optical-to-electric conversion part formed on the first electrode, and a second electrode formed on the optical-to-electric conversion part, and a separation part provided between adjacent photovoltaic cells. The separation part exposes the transparent electrode to incident sunlight.
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公开(公告)号：US20230141281A1
公开(公告)日：2023-05-11
申请号：US17917547
申请日：2021-03-30
发明人： Chang Kyun PARK , Yong Hyun KIM , Chul Joo HWANG
CPC分类号： C23C16/4405 , H01L21/02565 , H01L21/0262
摘要： The device for processing a substrate according to an embodiment of the present disclosure includes a chamber, a substrate supporting unit which is provided inside the chamber and supports a substrate provided inside the chamber, a gas distribution unit which is provided inside the chamber to face the substrate supporting unit and distributes a process gas toward the substrate supporting unit, a first temperature control unit which is installed in a central region of the gas distribution unit and increases a temperature of the central region, and a second temperature control unit which is installed in an edge region of the gas distribution unit and increases a temperature of the edge region more rapidly than the temperature of the central region.
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公开(公告)号：US20220367152A1
公开(公告)日：2022-11-17
申请号：US17623876
申请日：2020-07-07
发明人： Yong Hyun KIM , Yoon Jeong KIM , Chang Kyun PARK , Jae Wan LEE
摘要： A chamber cleaning method in accordance with an exemplary embodiment includes a chamber stabilizing process for transporting a substrate, on which a thin film deposition process has been completed, out of a chamber and processing an inside of the chamber, wherein the chamber stabilizing process includes: a cleaning process for injecting a cleaning gas into the chamber and etching and cleaning byproducts generated by the thin film deposition; and a coating process for injecting a gas including at least one among aluminum (Al), zirconium (Zr) or hafnium (Hf) into the chamber, and generating a protective film on an inner wall of the chamber and at least one surface of components installed inside the chamber.
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公开(公告)号：US20220275514A1
公开(公告)日：2022-09-01
申请号：US17624565
申请日：2020-06-11
发明人： Jae Wan LEE , Yong Hyun KIM , Yoon Jeong KIM , Yun Hoe KIM , Chang Kyun PARK , Gu Hyun JUNG , Ki Bum KIM , Seung Youb SA
IPC分类号： C23C16/509
摘要： Provided is a substrate processing apparatus. The positions of a first electrode and a second electrode are adjusted in advance in consideration of differences in coefficients of thermal expansion so that a short circuit created by contact between the first electrode and the second electrode is prevented even in the case in which the first electrode and the second electrode are thermally expanded during processing. Even in the case in which the first electrode and the second electrode are thermally expanded due to an increase in temperature during processing, a short circuit between the first electrode and the second electrode can be prevented, and the uniformity of a thin film can be maintained in the substrate processing apparatus for processing a large substrate.
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公开(公告)号：US20220278234A1
公开(公告)日：2022-09-01
申请号：US17620113
申请日：2020-07-03
发明人： Jae Wan LEE , Yong Hyun KIM , Chang Kyun PARK , Dong Hwan LEE
IPC分类号： H01L29/786 , H01L29/417
摘要： The present disclosure relates to a thin film transistor, and more particularly, to a thin film transistor in which a metal oxide thin film is used as an active layer. A thin film transistor including a gate insulating film and an active layer formed between source and drain electrodes, wherein the active layer includes: a first metal oxide thin film; a second metal oxide thin film provided between the first metal oxide thin film and the gate insulating film and having lower electrical conductivity than the first metal oxide thin film; and a third metal oxide thin film provided between the first metal oxide thin film and the source and drain electrodes and having lower electrical conductivity than the first metal oxide thin film.
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公开(公告)号：US20230361230A1
公开(公告)日：2023-11-09
申请号：US18225076
申请日：2023-07-21
发明人： Hyun Kyo SHIN , Duck Ho KIM , Yong Hyun KIM , Chang Su MHA , Kyung In MIN , Chang Kyun PARK , Jung Kyun LEE
IPC分类号： H01L31/0468 , H01L31/0465
CPC分类号： H01L31/0468 , H01L31/0465
摘要： The present inventive concept relates to a thin film type solar cell including a plurality of unit cells serially connected to one another on a substrate; and a light transmission part provided in the plurality of unit cells, wherein the light transmission part is provided in a discontinuous rectilinear structure including at least one disconnection part.
According to the present inventive concept, since the light transmission part is discontinuously formed, the repetition characteristic of the light transmission part including a plurality of dot patterns may be reduced, thereby effectively solving a problem where a wave pattern such as a moire phenomenon occurs when light is passing through the light transmission part.-
公开(公告)号：US20240318309A1
公开(公告)日：2024-09-26
申请号：US18574002
申请日：2022-06-28
发明人： Byung Gwan LIM , Sang Kyo KWON , Yong Hyun KIM , Jin Hyun KIM , Hong Eun KIM , Il Houng PARK , Chang Kyun PARK , In Woo BACK , Won Ju OH , Dong Hwan LEE , Yong Hyun LEE , Jun Seok LEE , Seung Hyun CHO , Jeong HEO
IPC分类号： C23C16/448 , C23C16/52
CPC分类号： C23C16/448 , C23C16/52
摘要： Disclosed are a raw material supply method including vaporizing a raw material in a canister, discharging the vaporized raw material, measuring an inner temperature of the canister, calculating a calculated temperature by using the inner temperature, and compensating a variation of the inner temperature by heating a heating unit disposed on the canister at the calculated temperature and a raw material supply apparatus applied to the method for supplying the raw material. The raw material supply method and apparatus may stably supply the vaporized raw material to a process space.
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公开(公告)号：US20240263307A1
公开(公告)日：2024-08-08
申请号：US18567002
申请日：2022-06-03
发明人： Yong Hyun KIM , Il Houng PARK , Chang Kyun PARK , Won Ju OH , Dong Hwan LEE , Yong Hyun LEE , Jun Seok LEE , Byung Gwan LIM
IPC分类号： C23C16/455
CPC分类号： C23C16/45536 , C23C16/45553 , C23C16/45559
摘要： Provided is a method for depositing a thin film, which is performed to deposit a thin film on a substrate. A method for depositing a thin film includes supplying a source gas together with a first diffusion gas onto a substrate provided in a process space, and supplying a reactant gas together with a second diffusion gas onto the substrate to continuous with the supplying of the source gas. The first diffusion gas and source gas and the second diffusion gas and reactant gas are supplied onto the substrate through paths different from each other.
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