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公开(公告)号：US20220367152A1
公开(公告)日：2022-11-17
申请号：US17623876
申请日：2020-07-07
Applicant: JUSUNG ENGINEERING CO., LTD.
Inventor： Yong Hyun KIM , Yoon Jeong KIM , Chang Kyun PARK , Jae Wan LEE
Abstract: A chamber cleaning method in accordance with an exemplary embodiment includes a chamber stabilizing process for transporting a substrate, on which a thin film deposition process has been completed, out of a chamber and processing an inside of the chamber, wherein the chamber stabilizing process includes: a cleaning process for injecting a cleaning gas into the chamber and etching and cleaning byproducts generated by the thin film deposition; and a coating process for injecting a gas including at least one among aluminum (Al), zirconium (Zr) or hafnium (Hf) into the chamber, and generating a protective film on an inner wall of the chamber and at least one surface of components installed inside the chamber.
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公开(公告)号：US20220275514A1
公开(公告)日：2022-09-01
申请号：US17624565
申请日：2020-06-11
Applicant: JUSUNG ENGINEERING CO., LTD.
Inventor： Jae Wan LEE , Yong Hyun KIM , Yoon Jeong KIM , Yun Hoe KIM , Chang Kyun PARK , Gu Hyun JUNG , Ki Bum KIM , Seung Youb SA
IPC: C23C16/509
Abstract: Provided is a substrate processing apparatus. The positions of a first electrode and a second electrode are adjusted in advance in consideration of differences in coefficients of thermal expansion so that a short circuit created by contact between the first electrode and the second electrode is prevented even in the case in which the first electrode and the second electrode are thermally expanded during processing. Even in the case in which the first electrode and the second electrode are thermally expanded due to an increase in temperature during processing, a short circuit between the first electrode and the second electrode can be prevented, and the uniformity of a thin film can be maintained in the substrate processing apparatus for processing a large substrate.
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公开(公告)号：US20240258104A1
公开(公告)日：2024-08-01
申请号：US18560924
申请日：2022-05-04
Applicant: JUSUNG ENGINEERING CO., LTD.
Inventor： Yoon Jeong KIM , Jung Kyun LEE
IPC: H01L21/02 , H01L29/16 , H01L29/423 , H01L29/49
CPC classification number: H01L21/0228 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02315 , H01L21/0234 , H01L29/1608 , H01L29/42384 , H01L29/4908 , H01L2029/42388
Abstract: The present disclosure relates to a method for depositing a thin film, and more particularly, to a method for depositing a thin film, which forms a gate insulation film on a silicon carbide substrate.
In accordance with an exemplary embodiment, a method for depositing a thin film includes: preparing a silicon carbide substrate having a plurality of semiconductor regions; and forming a gate insulation film on the silicon carbide substrate at a temperature of 100° C. to 400° C. through an atomic layer deposition process.
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公开(公告)号：US20240050981A1
公开(公告)日：2024-02-15
申请号：US18020620
申请日：2021-08-04
Applicant: JUSUNG ENGINEERING CO., LTD.
Inventor： Hyeon Chang KIM , Yoon Jeong KIM , Kwang Su YOO , Yong Hyun LEE , Jin Ho LEE
CPC classification number: B05D1/02 , B05B12/085
Abstract: Provided is a gas supply method using a gas distribution unit which includes a plurality of gas flow rate control devices installed on a plurality of gas suppling channels, respectively, and is configured to individually control the flow rates of process gases supplied through the respective gas supply channels, and differently adjust the gas supply times and supply order of process gases supplied through the respective gas supplying channels, thereby improving the uniformity in thickness of the deposited thin film across the entire surface area of the substrate.
