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公开(公告)号：US20220262602A1
公开(公告)日：2022-08-18
申请号：US17627642
申请日：2020-06-11
发明人： Sang Kyo KWON , Jae Wan LEE
IPC分类号： H01J37/32
摘要： Disclosed herein are a substrate processing apparatus and an interlock method thereof, which can generate an interlock signal, when the temperature of each upper or lower electrode in a process chamber exceeds a range set by a user, thereby cutting off application of RF power to the substrate processing apparatus. According to the substrate processing apparatus and the interlock method thereof, in an emergency where the temperatures of the upper and lower electrodes, a difference therebetween, an inter-electrode distance, and the resistance value of each electrode are out of the respective ranges set by the user, an interlock signal and an alarm signal can be generated to cut off the application of RF power to the substrate processing apparatus. Thus, it is possible to protect equipment by preventing the equipment from being damaged by RF power and to maintain the uniformity of a thin film deposited on a substrate.
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公开(公告)号：US20220367152A1
公开(公告)日：2022-11-17
申请号：US17623876
申请日：2020-07-07
发明人： Yong Hyun KIM , Yoon Jeong KIM , Chang Kyun PARK , Jae Wan LEE
摘要： A chamber cleaning method in accordance with an exemplary embodiment includes a chamber stabilizing process for transporting a substrate, on which a thin film deposition process has been completed, out of a chamber and processing an inside of the chamber, wherein the chamber stabilizing process includes: a cleaning process for injecting a cleaning gas into the chamber and etching and cleaning byproducts generated by the thin film deposition; and a coating process for injecting a gas including at least one among aluminum (Al), zirconium (Zr) or hafnium (Hf) into the chamber, and generating a protective film on an inner wall of the chamber and at least one surface of components installed inside the chamber.
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公开(公告)号：US20220275514A1
公开(公告)日：2022-09-01
申请号：US17624565
申请日：2020-06-11
发明人： Jae Wan LEE , Yong Hyun KIM , Yoon Jeong KIM , Yun Hoe KIM , Chang Kyun PARK , Gu Hyun JUNG , Ki Bum KIM , Seung Youb SA
IPC分类号： C23C16/509
摘要： Provided is a substrate processing apparatus. The positions of a first electrode and a second electrode are adjusted in advance in consideration of differences in coefficients of thermal expansion so that a short circuit created by contact between the first electrode and the second electrode is prevented even in the case in which the first electrode and the second electrode are thermally expanded during processing. Even in the case in which the first electrode and the second electrode are thermally expanded due to an increase in temperature during processing, a short circuit between the first electrode and the second electrode can be prevented, and the uniformity of a thin film can be maintained in the substrate processing apparatus for processing a large substrate.
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公开(公告)号：US20220356569A1
公开(公告)日：2022-11-10
申请号：US17870804
申请日：2022-07-21
发明人： Dong Hwan LEE , Jae Ho KIM , Hyun Il KIM , Ho Jin YUN , Jae Wan LEE , Byung Gwan LIM
摘要： The present disclosure relates to an apparatus and method for cleaning a chamber, and more particularly, to an apparatus and method for cleaning a chamber, which are capable of cleaning the chamber which is contaminated while depositing a thin film on a substrate. The chamber cleaning method in accordance with an exemplary embodiment is a method for cleaning a chamber configured to deposit a zinc oxide, the method comprising: supplying a chlorine (Cl)-containing gas and a hydrogen (H)-containing gas into a chamber; activating and reacting the separately supplied gases with each other inside the chamber to generate a reaction gas; and firstly cleaning the chamber with the reaction gas.
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公开(公告)号：US20180033858A1
公开(公告)日：2018-02-01
申请号：US15652062
申请日：2016-02-12
发明人： Jin Wook MOON , Yun Hoe KIM , Jae Ho KIM , Kyu Bum LEE , Jae Wan LEE
CPC分类号： H01L29/1054 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L21/205 , H01L29/22 , H01L29/26 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： Disclosed is a thin film transistor including a gate electrode on a substrate, a gate insulator over the entire surface of the substrate including the gate electrode, a first active layer corresponding to the gate electrode on the gate insulator, a second active layer on or under the first active layer, and a source electrode and a drain electrode spaced apart by a predetermined distance, the source electrode and the drain electrode being connected to the first active layer or the second active layer.
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公开(公告)号：US20220278234A1
公开(公告)日：2022-09-01
申请号：US17620113
申请日：2020-07-03
发明人： Jae Wan LEE , Yong Hyun KIM , Chang Kyun PARK , Dong Hwan LEE
IPC分类号： H01L29/786 , H01L29/417
摘要： The present disclosure relates to a thin film transistor, and more particularly, to a thin film transistor in which a metal oxide thin film is used as an active layer. A thin film transistor including a gate insulating film and an active layer formed between source and drain electrodes, wherein the active layer includes: a first metal oxide thin film; a second metal oxide thin film provided between the first metal oxide thin film and the gate insulating film and having lower electrical conductivity than the first metal oxide thin film; and a third metal oxide thin film provided between the first metal oxide thin film and the source and drain electrodes and having lower electrical conductivity than the first metal oxide thin film.
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公开(公告)号：US20210040610A1
公开(公告)日：2021-02-11
申请号：US16966883
申请日：2019-02-07
发明人： Dong Hwan LEE , Jae Ho KIM , Hyun Il KIM , Ho Jin YUN , Jae Wan LEE , Byung Gwan LIM
摘要： The present disclosure relates to an apparatus and method for cleaning a chamber, and more particularly, to an apparatus and method for cleaning a chamber, which are capable of cleaning the chamber which is contaminated while depositing a thin film on a substrate. The chamber cleaning method in accordance with an exemplary embodiment is a method for cleaning a chamber configured to deposit a zinc oxide, the method comprising: supplying a chlorine (Cl)-containing gas and a hydrogen (H)-containing gas into a chamber; activating and reacting the separately supplied gases with each other inside the chamber to generate a reaction gas; and firstly cleaning the chamber with the reaction gas.
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