公开(公告)号：US20160064280A1

公开(公告)日：2016-03-03

申请号：US14836236

申请日：2015-08-26

Applicant: JSR Corporation

Inventor： Kenzou OOKITA ,  Isao Aritome ,  Keisuke Kuriyama ,  Taichi Matsumoto ,  Kazuto Watanabe ,  Atsushi Kobayashi ,  Sugirou Shimoda

IPC: H01L21/768 ,  H01L23/535 ,  H01L23/522

CPC classification number: H01L21/76895 ,  H01L21/288 ,  H01L21/486 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/485 ,  H01L23/49827 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method for forming a three-dimensional interconnection, a contact plug is formed within a through hole provided in a substrate and an upper wire formed on an upper side of the substrate and a lower wire formed on a lower side are electrically connected to one another by the contact plug. A coating film is formed on an upper surface of the substrate and inner surface of the through hole by applying a metal film-forming composition containing at least one salt of and a particle of a metal to the substrate provided with the through hole. A metal film is formed by heating the coating film, and plated by filling up the through hole by depositing a conductor on the metal film by a plating process using the metal film as a seed layer. An excess conductor deposited in the plating is removed by a chemical mechanical polishing process.

Abstract translation: 在形成三维互连的方法中，在设置在基板上的通孔内形成接触插塞，形成在基板的上侧的上线，下侧形成的下线电连接到一个 另一个由接触塞。 通过将具有至少一种金属盐和金属颗粒的金属成膜组合物涂布到设置有通孔的基板上，在基板的上表面和通孔的内表面上形成涂膜。 通过加热涂膜来形成金属膜，并通过使用金属膜作为种子层的电镀工艺在金属膜上沉积导体来填充通孔而进行镀覆。 通过化学机械抛光工艺除去沉积在电镀中的过量导体。

公开(公告)号：US20170306481A1

公开(公告)日：2017-10-26

申请号：US15509662

申请日：2015-09-08

Applicant: JSR CORPORATION

Inventor： Hitoshi HAMAGUCHI ,  Kenrou TANAKA ,  Kenzou OOKITA ,  Keisuke KURIYAMA

IPC: C23C16/44 ,  H05K3/00 ,  G03F7/20 ,  G03F7/039 ,  C23C16/56 ,  C09D133/16 ,  C09D133/14 ,  C09D133/10 ,  C09D129/10 ,  H05K3/12 ,  B05D3/06

CPC classification number: C23C16/44 ,  B05D3/06 ,  B29C59/16 ,  C08F257/00 ,  C08F265/04 ,  C08F289/00 ,  C08J7/047 ,  C08J2355/02 ,  C08J2369/00 ,  C09D129/10 ,  C09D133/10 ,  C09D133/14 ,  C09D133/16 ,  C09D151/003 ,  C23C16/56 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/18 ,  G03F7/20 ,  G03F7/24 ,  H05K3/0023 ,  H05K3/12 ,  H05K2201/0166 ,  C08F216/1408

Abstract: The present invention relates to: a method of producing a structure having a recessed pattern; a resin composition; a method of forming an electroconductive film; an electronic circuit; and an electronic device. The method of producing a structure having a recessed pattern includes the following steps (i) and (ii), and the recessed pattern has a film thickness that is thinner by 5% to less than 90% with respect to that of a coating film obtained in the step (i): (i) the step of forming a coating film on a non-flat surface of a structure using a resin composition which includes an acid-dissociable group-containing polymer and an acid generator; and (ii) the step of forming a recess by subjecting a prescribed part of a portion of the coating film to irradiation with radiation.

公开(公告)号：US20160062242A1

公开(公告)日：2016-03-03

申请号：US14888244

申请日：2014-04-15

Applicant: JSR CORPORATION

Inventor： Hitoshi HAMAGUCHI ,  Kenrou TANAKA ,  Kenzou OOKITA ,  Keisuke KURIYAMA

IPC: G03F7/38 ,  H05K1/02 ,  G03F7/039 ,  H05K3/28 ,  G03F7/16 ,  G03F7/20

CPC classification number: G03F7/38 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/16 ,  G03F7/20 ,  G03F7/36 ,  H05K1/0296 ,  H05K3/107 ,  H05K3/1208 ,  H05K3/287 ,  H05K2201/0145 ,  H05K2201/0154 ,  H05K2201/0166

Abstract: Provided is a method for manufacturing a substrate having a concave pattern to be used for forming a high-definition pattern while suppressing wet-spreading and bleeding of a film-forming ink, provided is a composition to be used for manufacturing the substrate, and provided are a method for forming a conductive film, an electronic circuit, and an electronic device.The method for manufacturing a substrate having a concave pattern includes: (i) a step of applying, on a substrate 1, a composition containing a polymer having an acid-dissociable group and an acid generator to form a coating film 2 and (ii) a step of irradiating a predetermined portion of the coating film 2 with radiation. The method for forming a conductive film includes applying a conductive film-forming ink on the concave pattern formed in the exposed portion of the coating film 2 and heating the ink to form a pattern 6. The electronic circuit and the electronic device are provided by using the method for forming a conductive film.

Abstract translation: 提供一种用于制造用于形成高清晰度图案的凹形图案的基板的方法，同时抑制成膜油墨的湿扩展和渗色，提供用于制造基板的组合物，并且提供 是形成导电膜，电子电路和电子器件的方法。 具有凹形图案的基板的制造方法包括：（i）在基板1上涂布含有具有酸解离基的聚合物和酸发生剂的组合物以形成涂膜2的步骤，（ii） 用辐射照射涂膜2的预定部分的步骤。 形成导电膜的方法包括在形成在涂膜2的暴露部分中的凹形图案上涂覆导电膜形成油墨并加热油墨以形成图案6.电子电路和电子设备通过使用 形成导电膜的方法。

公开(公告)号：US20170243980A1

公开(公告)日：2017-08-24

申请号：US15582823

申请日：2017-05-01

Applicant: JSR Corporation

Inventor： Hitoshi HAMAGUCHI ,  Kenrou TANAKA ,  Kenzou OOKITA ,  Keisuke KURIYAMA

IPC: H01L29/786 ,  H01L21/288 ,  H01L29/66

CPC classification number: H01L29/78636 ,  H01L21/28 ,  H01L21/288 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7869

Abstract: The thin film transistor includes a first insulating layer provided on a substrate; a source electrode and a drain electrode that are provided on the first insulating layer; a semiconductor layer provided so as to cover the first insulating layer, the source electrode, and the drain electrode; a second insulating layer provided on the semiconductor layer; and a gate electrode provided on the second insulating layer, in which the first insulating layer is formed of a hydrophilic/hydrophobic material and has a recess portion, and the source electrode and the drain electrode are provided so as to fill the recess portion of the first insulating layer.

公开(公告)号：US20160081189A1

公开(公告)日：2016-03-17

申请号：US14849960

申请日：2015-09-10

Applicant: JSR Corporation

Inventor： Sugirou SHIMODA ,  Kenzou OOKITA ,  Keisuke SATOU ,  Kazuto WATANABE

IPC: H05K1/09 ,  H05K3/18 ,  C03C17/10 ,  H01B1/02

CPC classification number: C03C17/10 ,  C03C2217/253 ,  C03C2217/256 ,  C03C2217/27 ,  C03C2218/365 ,  G06F3/041 ,  G06F3/044 ,  G06F2203/04111 ,  H01B1/02 ,  H05K1/0306 ,  H05K1/0386 ,  H05K1/097 ,  H05K3/188 ,  H05K3/38 ,  H05K2203/1157 ,  H05K2203/125

Abstract: A composition for forming a conductive film includes at least one of a metal salt (A1) and a metal particle (A2) as component (A) that serves as a metal source of the conductive film, and a metalloxane compound (B). The metal salt (A1) and the metal particle (A2) contain one or more metals selected from the group consisting of Ni, Pd, Pt, Cu, Ag, and Au. The metalloxane compound (B) has at least one metal atom selected from the group consisting of Ti, Zr, Sn, Si, and Al in its main chain. Preferably, the metal salt (A1) is a carboxylate containing a metal selected from the group consisting of Cu, Ag, and Ni. Preferably, the metal particle (A2) has an average particle diameter of 5 nm to 100 nm and comprises a metal selected from the group consisting of Cu, Ag, and Ni.

Abstract translation: 用于形成导电膜的组合物包括作为导电膜的金属源的组分（A）的金属盐（A1）和金属颗粒（A2）和金属氧化物化合物（B）中的至少一种。 金属盐（A1）和金属颗粒（A2）含有一种或多种选自Ni，Pd，Pt，Cu，Ag和Au的金属。 金属氧化物（B）在其主链中具有选自Ti，Zr，Sn，Si和Al中的至少一种金属原子。 优选地，金属盐（A1）是含有选自Cu，Ag和Ni的金属的羧酸盐。 优选地，金属颗粒（A2）的平均粒径为5nm至100nm，并且包含选自Cu，Ag和Ni的金属。