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    Plural semiconductor devices in monolithic flip chip
    2.
    发明申请
    Plural semiconductor devices in monolithic flip chip 有权
    单片倒装芯片中的多个半导体器件

    公开(公告)号：US20030062622A1

    公开(公告)日：2003-04-03

    申请号：US10260148

    申请日：2002-09-27

    Applicant: International Rectifier Corp.

    Inventor： Mark Pavier ,  Tim Sammon

    IPC: H01L023/48

    CPC classification number: H01L29/7811 ,  H01L23/3677 ,  H01L24/81 ,  H01L27/088 ,  H01L29/7809 ,  H01L29/7813 ,  H01L2224/81801 ,  H01L2924/01068 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

    Abstract: A flip chip structure contains laterally spaced semiconductor devices such as MOSFETs in a common chip. A deep trench isolates the devices. Contacts are connected to the source drain and gate electrode (or other electrodes) and are interconnected as required for a circuit function either within the chip or on the support board. Ball contacts are connected to the electrodes. The opposite surface of the chip to that in which the devices are formed receives a copper or other metal layer which is patterned to increase its area for heat exchange. The surface of the copper is coated with black oxide to increase its ability to radiate heat.

    Abstract translation: 倒装芯片结构包含横向​​间隔的半导体器件，例如公共芯片中的MOSFET。 深沟渠隔离设备。 触点连接到源极漏极和栅电极（或其他电极），并且根据芯片或支撑板上的电路功能的要求进行互连。 球触点连接到电极。 芯片的与形成器件的相对表面接收铜或其它金属层，其被图案化以增加其用于热交换的面积。 铜的表面涂覆有黑色氧化物以增加其辐射热能力。

    Vertical conduction flip-chip device with bump contacts on single surface
    3.
    发明申请
    Vertical conduction flip-chip device with bump contacts on single surface 有权
    垂直导通倒装芯片器件，在单面上具有凸点接触

    公开(公告)号：US20010045635A1

    公开(公告)日：2001-11-29

    申请号：US09780080

    申请日：2001-02-09

    Applicant: International Rectifier Corp.

    Inventor： Daniel M. Kinzer ,  Aram Arzumanyan ,  Tim Sammon

    IPC: H01L023/495 ,  H01L023/02

    CPC classification number: H01L29/7813 ,  H01L23/3114 ,  H01L23/367 ,  H01L23/50 ,  H01L29/41741 ,  H01L29/4238 ,  H01L29/7809 ,  H01L2224/16 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/00014

    Abstract: A flip-chip MOSFET structure has a vertical conduction semiconductor die in which the lower layer of the die is connected to a drain electrode on the top of the die by a diffusion sinker or conductive electrode. The source and gate electrodes are also formed on the upper surface of the die and have coplanar solder balls for connection to a circuit board. The structure has a chip scale package size. The back surface of the die, which is inverted when the die is mounted may be roughened or may be metallized to improve removal of heat from the die. Several separate MOSFETs can be integrated side-by-side into the die to form a series connection of MOSFETs with respective source and gate electrodes at the top surface having solder ball connectors. Plural solder ball connectors may be provided for the top electrodes and are laid out in respective parallel rows. The die may have the shape of an elongated rectangle with the solder balls laid out symmetrically to a diagonal to the rectangle.

    Abstract translation: 倒装芯片MOSFET结构具有垂直导电半导体管芯，其中管芯的下层通过扩散沉积片或导电电极连接到管芯顶部的漏电极。 源极和栅电极也形成在管芯的上表面上，并且具有用于连接到电路板的共面焊球。 该结构具有芯片级封装尺寸。 当安装模具时倒模的模具的背面可以被粗糙化或者可以被金属化以改善从模具中的热量的去除。 几个单独的MOSFET可以并排集成到管芯中，以形成MOSFET与具有焊球连接器的顶表面处的相应源极和栅电极的串联连接。 可以为顶部电极提供多个焊球连接器并且布置在各自的平行行中。 模具可以具有细长矩形的形状，其中焊球对称地对准矩形的对角线。

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