公开(公告)号：US11527669B2

公开(公告)日：2022-12-13

申请号：US15976331

申请日：2018-05-10

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Jeehwan Kim ,  David B. Mitzi ,  Byungha Shin ,  Teodor K. Todorov ,  Mark T. Winkler

IPC分类号： H01L31/0749 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/032 ,  H01L31/072

摘要： A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.

公开(公告)号：US11355661B2

公开(公告)日：2022-06-07

申请号：US16595959

申请日：2019-10-08

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Tayfun Gokmen ,  Oki Gunawan ,  Richard A. Haight ,  Jeehwan Kim ,  David B. Mitzi ,  Mark T. Winkler

IPC分类号： H01L31/075 ,  H01L31/032 ,  H01L31/0328 ,  H01L31/077 ,  H01L31/18

摘要： A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

公开(公告)号：US10008625B2

公开(公告)日：2018-06-26

申请号：US14819007

申请日：2015-08-05

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Jeehwan Kim ,  David B. Mitzi ,  Byungha Shin ,  Teodor K. Todorov ,  Mark T. Winkler

IPC分类号： H01L31/02 ,  H01L31/0264 ,  H01L31/0749 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/032 ,  H01L31/072

CPC分类号： H01L31/0749 ,  H01L31/02167 ,  H01L31/0326 ,  H01L31/072 ,  H01L31/18 ,  H01L31/1868 ,  Y02E10/50

摘要： A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.

公开(公告)号：US20150059856A1

公开(公告)日：2015-03-05

申请号：US14036255

申请日：2013-09-25

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Marinus J. Hopstaken ,  David B. Mitzi ,  Wei Wang ,  Mark T. Winkler

IPC分类号： H01L31/032

CPC分类号： H01L31/0327 ,  H01L31/0326 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

摘要： A method for fabricating a photovoltaic device includes forming a film including titanium on a conductive layer formed on a substrate. An absorber layer is formed including a Cu—Zn—Sn containing chalcogenide compound with a kesterite structure of the formula: Cu2-xZn1+ySn(S1-zSez)4+q wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; −1≦q≦1 (CZTS) on the film. The absorber layer is annealed to diffuse titanium therein and to recrystallize the CZTS material of the film. A buffer layer is formed on the absorber layer, and a transparent conductive layer is formed on the buffer layer.

公开(公告)号：US09806211B2

公开(公告)日：2017-10-31

申请号：US14727071

申请日：2015-06-01

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Oki Gunawan ,  Jeehwan Kim ,  David B. Mitzi ,  Devendra K. Sadana ,  Teodor K. Todorov

IPC分类号： H01L21/00 ,  H01L31/032 ,  H01L31/18 ,  H01L31/076 ,  H01L31/078 ,  C23C14/34 ,  C25D7/12 ,  H01L31/20

CPC分类号： H01L31/0326 ,  C23C14/34 ,  C25D7/12 ,  H01L31/076 ,  H01L31/078 ,  H01L31/18 ,  H01L31/20 ,  Y02E10/548

摘要： A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.

公开(公告)号：US20160204304A1

公开(公告)日：2016-07-14

申请号：US14596830

申请日：2015-01-14

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Solar Frontier K.K.

发明人： Oki Gunawan ,  Homare Hiroi ,  Jeehwan Kim ,  David B. Mitzi ,  Hiroki Sugimoto

IPC分类号： H01L31/18 ,  H01L31/0216 ,  H01L31/0445 ,  H01L31/0224

CPC分类号： H01L31/1896 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/022475 ,  H01L31/0445 ,  H01L31/1864 ,  H01L33/0079 ,  Y02E10/50 ,  Y02P70/521

摘要： A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.

摘要翻译： 热剥离的方法包括在基材上提供目标层以形成结构。 应力层沉积在目标层上。 将该结构放置在温度受控的环境中以在目标层和基底之间引起不同的热膨胀。 当实现临界温度使目标层与基板分离以产生独立的薄膜装置时，目标层从基板剥离。

公开(公告)号：US09184322B2

公开(公告)日：2015-11-10

申请号：US14013827

申请日：2013-08-29

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Marinus J. Hopstaken ,  David B. Mitzi ,  Wei Wang ,  Mark T. Winkler

IPC分类号： H01L31/032 ,  H01L31/18

CPC分类号： H01L31/0327 ,  H01L31/0326 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

摘要： A method for fabricating a photovoltaic device includes forming a film including titanium on a conductive layer formed on a substrate. An absorber layer is formed including a Cu—Zn—Sn containing chalcogenide compound with a kesterite structure of the formula: Cu2-xZn1+ySn(S1-zSez)4+q wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; −1≦q≦1 (CZTS) on the film. The absorber layer is annealed to diffuse titanium therein and to recrystallize the CZTS material of the film. A buffer layer is formed on the absorber layer, and a transparent conductive layer is formed on the buffer layer.

摘要翻译： 一种制造光伏器件的方法包括在形成在衬底上的导电层上形成包含钛的膜。 形成吸收层，其包含含有下式的K酯类结构的含有Cu-Zn-Sn的硫族化合物：Cu2-xZn1 + ySn（S1-zSez）4 + q其中0＆nlE; x＆nlE; 1; 0＆nlE; y＆nlE; 1; 0＆nlE; z＆nlE; 1; -1＆nlE; q＆nlE; 1（CZTS）上的电影。 将吸收层退火以在其中扩散钛并使膜的CZTS材料再结晶。 在吸收层上形成缓冲层，在缓冲层上形成透明导电层。

公开(公告)号：US20150000741A1

公开(公告)日：2015-01-01

申请号：US13930975

申请日：2013-06-28

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Tayfun Gokmen ,  Oki Gunawan ,  Richard A. Haight ,  Jeehwan Kim ,  David B. Mitzi ,  Mark T. Winkler

IPC分类号： H01L31/032 ,  H01L31/18

CPC分类号： H01L31/075 ,  H01L31/0322 ,  H01L31/0324 ,  H01L31/0326 ,  H01L31/0328 ,  H01L31/077 ,  H01L31/18 ,  Y02E10/541

摘要： A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

摘要翻译： 光伏器件包括第一接触和混合吸收层。 混合吸收层包括硫族化物层和与硫族化物层接触的半导体层。 在吸收层上形成缓冲层，在缓冲层上形成透明导电接触层。

公开(公告)号：US20140147958A1

公开(公告)日：2014-05-29

申请号：US13967073

申请日：2013-08-14

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Jeehwan Kim ,  David B. Mitzi ,  Byungha Shin ,  Teodor K. Todorov ,  Mark T. Winkler

IPC分类号： H01L31/18

CPC分类号： H01L31/0749 ,  H01L31/02167 ,  H01L31/0326 ,  H01L31/072 ,  H01L31/18 ,  H01L31/1868 ,  Y02E10/50

摘要： A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.

公开(公告)号：US20200044107A1

公开(公告)日：2020-02-06

申请号：US16595959

申请日：2019-10-08

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Tayfun Gokmen ,  Oki Gunawan ,  Richard A. Haight ,  Jeehwan Kim ,  David B. Mitzi ,  Mark T. Winkler

IPC分类号： H01L31/075 ,  H01L31/032 ,  H01L31/18 ,  H01L31/0328 ,  H01L31/077

摘要： A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.