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公开(公告)号：US20240242328A1
公开(公告)日：2024-07-18
申请号：US18155245
申请日：2023-01-17
发明人： YanLong Hou , WeiFeng Zhang , Wei Wang , Jiayu Zheng
IPC分类号： G06T7/00
CPC分类号： G06T7/0004 , G06T2207/20081 , G06T2207/30141 , G06T2207/30152
摘要： A computing system includes an automatic optical inspection (AOI) and a database that stores images of a plurality of visual inspection (VI) training boards. Each of the visual inspection (VI) training boards includes at least one intended defect. The AOI system includes an artificial intelligence (AI) algorithm implemented in an automatic optical inspection (AOI) system. The AOI system trains the AI algorithm to learn at least one target defect based on the at least one intended defect including in the plurality of VI training boards, analyzes a production printed circuit board (PCB), and determines either a non-defective PCB in response to the AI algorithm determining the production PCB excludes the at least one target defect, or a defective PCB in response to the AI algorithm determining the production PCB includes at least one target defect.
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公开(公告)号：US20230066107A1
公开(公告)日：2023-03-02
申请号：US17412776
申请日：2021-08-26
发明人： Ruilong Xie , Alexander Reznicek , Wei Wang , Tao Li , Tsung-Sheng Kang
摘要： An integrated circuit, a system, and a method to integrate phase change memory and magnetoresistive random access memory within a same integrated circuit in a system. The integrated circuit may include an MRAM and a PCM. The MRAM may include an MRAM bottom electrode, an MRAM stack, and an MRAM top electrode. The PCM may include a PCM bottom electrode, where the PCM bottom electrode has a lower height than the MRAM bottom electrode, a phase change material, and a PCM top electrode.
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3.发明申请公开(公告)号：US20220189550A1
公开(公告)日：2022-06-16
申请号：US17121379
申请日：2020-12-14
发明人： Kevin W. Brew , Wei Wang , Injo Ok , Lan Yu , Youngseok Kim
摘要： An embodiment in the application may include an analog memory structure, and methods of writing to such a structure, including a volatile memory element in series with a non-volatile memory element. The analog memory structure may change resistance upon application of a voltage. This may enable accelerated writing of the analog memory structure.
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公开(公告)号：US20220102627A1
公开(公告)日：2022-03-31
申请号：US17548745
申请日：2021-12-13
IPC分类号： H01L45/00
摘要： A method is presented for reducing a reset current for a phase change memory (PCM). The method includes forming a bottom electrode, constructing a PCM cell structure including a plurality of phase change memory layers and a plurality of heat transfer layers, wherein the plurality of phase change memory layers are assembled in an alternating configuration with respect to the plurality of heat transfer layers, and forming a top electrode over the PCM cell structure. The plurality of phase change memory layers are arranged perpendicular to the top and bottom electrodes. Additionally, airgaps are defined adjacent the PCM cell structure.
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公开(公告)号：US20200301789A1
公开(公告)日：2020-09-24
申请号：US16355956
申请日：2019-03-18
发明人： Jie Zhang , Wei Wang , Hong Lin Guo , Jian Sun , Xin Peng Liu , Yun Jie Fang
IPC分类号： G06F11/14 , G06F16/176 , G06F8/65 , G06F16/188
摘要： An approach is provided in which an information handling system creates a set of first containers from a container image that each includes a set of shareable files. The information handling system creates a second container from the container image that is devoid of the set of shared files and includes a pointer that points to a selected one of the first containers. In turn, the second container mounts to the first container and utilizes the shared files included the first container.
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公开(公告)号：US10778785B2
公开(公告)日：2020-09-15
申请号：US15823986
申请日：2017-11-28
发明人： Hui Qing Shi , Wei Wang , Yi Bin Wang , Yuan Yuan , Ya Pei Zhou
IPC分类号： H04L29/08 , G06F9/455 , G06F16/2457
摘要： Cognitively detecting cloud services and their associated status of a Virtual Machine and/or Container in a cloud platform to predict availability of cloud services preferably including the status of the services, a service object health map, and a service health status. The outputs are preferably sent to a user for feedback, which is sent back to the cognitive service.
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公开(公告)号：US20200176235A1
公开(公告)日：2020-06-04
申请号：US16204168
申请日：2018-11-29
发明人： Hsueh-Chung Chen , Wei Wang
摘要： Techniques that facilitate physical vapor deposition with a dual-shutter are provided. In one example, a system includes a target plate, a first shutter plate and a second shutter plate. The target plate is associated with a voltage for physical vapor deposition. The first shutter plate comprises a first set of openings. The second shutter plate comprises a second set of openings. The first shutter plate and the second shutter plate are located between the target plate and a substrate. Furthermore, the first shutter and the second shutter rotate.
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公开(公告)号：US20190355555A1
公开(公告)日：2019-11-21
申请号：US15984101
申请日：2018-05-18
摘要： A multipurpose semiconductor process chamber includes a vessel wall that encloses contiguous first and second volumes of the multipurpose chamber, and means for selectively effectively preventing ions moving across a plane that partitions the first volume from the second volume. For example, the means can include an electromagnet, or at least one permanent magnet, that is operable to impose and remove a magnetic field with field lines extending in the plane.
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公开(公告)号：US10483091B1
公开(公告)日：2019-11-19
申请号：US15984101
申请日：2018-05-18
IPC分类号： H01L21/322 , H01J37/32 , H01L21/30
摘要： A multipurpose semiconductor process chamber includes a vessel wall that encloses contiguous first and second volumes of the multipurpose chamber, and means for selectively effectively preventing ions moving across a plane that partitions the first volume from the second volume. For example, the means can include an electromagnet, or at least one permanent magnet, that is operable to impose and remove a magnetic field with field lines extending in the plane.
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公开(公告)号：US09831182B2
公开(公告)日：2017-11-28
申请号：US14966248
申请日：2015-12-11
发明人： Terry A. Spooner , Wei Wang , Chih-Chao Yang
IPC分类号： H01L21/768 , H01L23/532 , H01L21/3213
CPC分类号： H01L23/53238 , H01L21/32136 , H01L21/76805 , H01L21/76814 , H01L21/76826 , H01L21/7684 , H01L21/76877 , H01L21/76883 , H01L23/53295
摘要： A method of making an interconnect structure includes forming an opening within a dielectric material layer disposed on a substrate including a conductive material, the opening extending from a first surface to a second surface of the dielectric material layer and being in contact with a portion of the substrate; performing a plasma treatment process to chemically enrich exposed surfaces of the dielectric material that line the opening to form a chemically-enriched dielectric surface layer that included an element in a higher concentration than a remaining portion of the dielectric material layer; performing a chemical treatment process to remove a metal contact product from the portion of the substrate that is in contact with the opening; and disposing a conductive material in the opening to substantially fill the opening and form the interconnect structure.
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