公开(公告)号：US08922019B2

公开(公告)日：2014-12-30

申请号：US14069282

申请日：2013-10-31

Applicant: Internatinoal Business Machines Corporation

Inventor： Mukta G. Farooq ,  Emily R. Kinser ,  Ian D. Melville ,  Krystyna W. Semkow

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L21/02 ,  H01L23/00

CPC classification number: H01L21/02697 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05007 ,  H01L2224/05016 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05157 ,  H01L2224/05187 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/15787 ,  H01L2924/04953 ,  H01L2924/01014 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Disclosed is a semiconductor device wherein an insulation layer has a via opening with an aluminum layer in the via opening and in contact with the last wiring layer of the device. There is a barrier layer on the aluminum layer followed by a copper plug which fills the via opening. Also disclosed is a process for making the semiconductor device.

Abstract translation: 公开了一种半导体器件，其中绝缘层在通孔开口中具有铝层的通孔，并与器件的最后布线层接触。 在铝层上有阻挡层，其后是填充通孔的铜塞。 还公开了制造半导体器件的方法。