公开(公告)号：US20230093186A1

公开(公告)日：2023-03-23

申请号：US17479871

申请日：2021-09-20

申请人： Intel Corporation

发明人： Tarek A. Ibrahim ,  Rahul N. Manepalli ,  Sairam Agraharam ,  Xiaoxuan Sun

IPC分类号： H01L23/538 ,  H01L25/065 ,  H01L23/00 ,  H01L21/48

摘要： An electronic device and associated methods are disclosed. In one example, the electronic device includes a semiconductor device. In selected examples, the semiconductor device may include two semiconductor dies, a redistribution layer, an interconnect bridge coupled between the two semiconductor dies and located vertically between the two semiconductor dies and the redistribution layer, and a metallic connection passing through the redistribution layer and coupled to one or more of the two semiconductor dies in a solder-free connection.

公开(公告)号：US20230087367A1

公开(公告)日：2023-03-23

申请号：US17481506

申请日：2021-09-22

申请人： Intel Corporation

发明人： Xiaoxuan Sun ,  Omkar G. Karhade ,  Dingying Xu ,  Sairam Agraharam ,  Xavier Francois Brun

IPC分类号： H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L21/56 ,  H01L23/538 ,  H01L23/31

摘要： Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface with first conductive contacts and an opposing second surface with second conductive contacts, in a first layer; a die attach film (DAF), at the first surface of the first die, including through-DAF vias (TDVs), wherein respective ones of the TDVs are electrically coupled to respective ones of the first conductive contacts; a conductive pillar in the first layer; and a second die, in a second layer on the first layer, wherein the second die is electrically coupled to the second conductive contacts on the second surface of the first die and electrically coupled to the conductive pillar.

公开(公告)号：US20240222283A1

公开(公告)日：2024-07-04

申请号：US18147487

申请日：2022-12-28

申请人： Intel Corporation

发明人： Hongxia Feng ,  Bohan Shan ,  Bai Nie ,  Xiaoxuan Sun ,  Holly Sawyer ,  Tarek Ibrahim ,  Adwait Telang ,  Dingying Xu ,  Leonel Arana ,  Xiaoying Guo ,  Ashay Dani ,  Sairam Agraharam ,  Haobo Chen ,  Srinivas Pietambaram ,  Gang Duan

IPC分类号： H01L23/538 ,  H01L23/00 ,  H01L23/498 ,  H01L25/065

CPC分类号： H01L23/5386 ,  H01L23/49816 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/16227 ,  H01L2924/15311

摘要： Methods and apparatus to prevent over-etch in semiconductor packages are disclosed. A disclosed example semiconductor package includes at least one dielectric layer, an interconnect extending at least partially through or from the at least one dielectric layer, and a material on at least a portion of the interconnect, wherein the material comprises at least one of silicon or titanium.

公开(公告)号：US20230197679A1

公开(公告)日：2023-06-22

申请号：US17558457

申请日：2021-12-21

申请人： Intel Corporation

发明人： Jeremy Ecton ,  Jason M. Gamba ,  Brandon C. Marin ,  Srinivas V. Pietambaram ,  Xiaoxuan Sun ,  Omkar G. Karhade ,  Xavier Francois Brun ,  Yonggang Li ,  Suddhasattwa Nad ,  Bohan Shan ,  Haobo Chen ,  Gang Duan

IPC分类号： H01L25/065 ,  H01L23/00 ,  H01L23/538

CPC分类号： H01L25/0652 ,  H01L24/16 ,  H01L24/14 ,  H01L24/73 ,  H01L24/13 ,  H01L23/5383 ,  H01L2224/16227 ,  H01L2224/14177 ,  H01L2224/73204 ,  H01L2224/13111 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01031

摘要： Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface and an opposing second surface, in a first layer; a redistribution layer (RDL) on the first layer, wherein the RDL includes conductive vias having a greater width towards a first surface of the RDL and a smaller width towards an opposing second surface of the RDL; wherein the first surface of the RDL is electrically coupled to the second surface of the first die by first solder interconnects having a first solder; and a second die in a second layer on the RDL, wherein the second die is electrically coupled to the RDL by second solder interconnects having a second solder, wherein the second solder is different than the first solder.

公开(公告)号：US20220199480A1

公开(公告)日：2022-06-23

申请号：US17129135

申请日：2020-12-21

申请人： Intel Corporation

发明人： Omkar G. Karhade ,  Xiaoxuan Sun ,  Nitin A. Deshpande ,  Sairam Agraharam

IPC分类号： H01L23/31 ,  H01L23/538 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18

摘要： Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.