公开(公告)号：US20230402368A1

公开(公告)日：2023-12-14

申请号：US17837732

申请日：2022-06-10

Applicant: Intel Corporation

Inventor： Benjamin T. Duong ,  Brian P. Balch ,  Kristof Darmawikarta ,  Darko Grujicic ,  Suddhasattwa Nad ,  Xing Sun ,  Marcel A. Wall ,  Yi Yang

IPC: H01L23/522 ,  H01C7/00 ,  H01L49/02

CPC classification number: H01L23/5228 ,  H01L28/24 ,  H01L23/5226 ,  H01C7/006

Abstract: Techniques for thin-film resistors in vias are disclosed. In the illustrative embodiment, thin-film resistors are formed in through-glass vias of a glass substrate of an interposer. The thin-film resistors do not take up a significant amount of area on a layer of the interposer, as the thin-film resistor extends vertically through a via rather than horizontally on a layer of the interposer. The thin-film resistors may be used for any suitable purpose, such as power dissipation or voltage control, current control, as a pull-up or pull-down resistor, etc.

公开(公告)号：US20240006300A1

公开(公告)日：2024-01-04

申请号：US17855667

申请日：2022-06-30

Applicant: Intel Corporation

Inventor： Yi Yang ,  Srinivas Pietambaram ,  Darko Grujicic ,  Marcel Wall ,  Suddhasattwa Nad ,  Ala Omer ,  Brian P. Balch ,  Wei Wei

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49894 ,  H01L23/49822 ,  H01L23/49838 ,  H01L21/4857 ,  H01L21/4864

Abstract: Substrate assemblies having adhesion promotor layers and related methods are disclosed. An example package assembly includes a substrate, a dielectric layer and a conductive layer between the substrate and the dielectric layer. The conductive layer has a surface roughness of less than 1 micrometer (μm). A film is provided between the dielectric layer and the conductive layer, and between exposed surfaces of the substrate adjacent the conductive layer and the dielectric layer. The film including silicon and nitrogen and being substantially free of hydrogen.