公开(公告)号：US20250112163A1

公开(公告)日：2025-04-03

申请号：US18375203

申请日：2023-09-29

Applicant: Intel Corporation

Inventor： Pratyush Mishra ,  Pratyasha Mohapatra ,  Srinivas Pietambaram ,  Whitney Bryks ,  Mahdi Mohammadighaleni ,  Joshua Stacey ,  Travis Palmer ,  Yosef Kornbluth ,  Kuang Liu ,  Astitva Tripathi ,  Yuqin Li ,  Rengarajan Shanmugam ,  Xing Sun ,  Brian Balch ,  Darko Grujicic ,  Jieying Kong ,  Nicholas Haehn ,  Jacob Vehonsky ,  Mitchell Page ,  Vincent Obiozo Eze ,  Daniel Wandera ,  Sameer Paital ,  Gang Duan

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/15 ,  H01L25/065

Abstract: An IC die package includes a substrate comprising glass and a plurality of holes extending through the glass. A via metallization is present within the holes. A liner is between the via metallization and the glass. The liner can comprise a beta-titanium alloy layer, polymer hydrogel layer and an MXene seed layer, an organic material layer and a metal layer, or an organic material layer between first and second metal layers. A polymer layer may be formed by electrodeposition of charged nanoparticles.

公开(公告)号：US20250006646A1

公开(公告)日：2025-01-02

申请号：US18216525

申请日：2023-06-29

Applicant: Intel Corporation

Inventor： Xing Sun ,  Srinivas Pietambaram ,  Darko Grujicic ,  Rengarajan Shanmugam ,  Brian Balch ,  Micah Armstrong ,  Qiang Li ,  Marcel Wall ,  Rahul Manepalli

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/00 ,  H01L23/15 ,  H01L25/065

Abstract: Integrated circuit (IC) die packages including a glass with conductive through-glass vias (TGVs). The TGVs are lined with a buffer comprising an inorganic material having a low elastic (Young's) modulus. The buffer may thereby accommodate internal stress between the glass and through via metallization formed over the buffer. The compliant inorganic material may be a metal or metal alloy, for example, different than that of the via metallization. The inorganic material may also be a metal nitride, metal silicide, or metal carbide. A TGV buffer may be one material layer of a stack comprising two or more material layers deposited upon TGV sidewall surfaces. A routing structure may be built-up on at least one side of the glass and IC die assembled to the routing structure. The buffer Ipresent within the TGVs may be absent from metal features of the routing structure.