公开(公告)号：US20250006646A1

公开(公告)日：2025-01-02

申请号：US18216525

申请日：2023-06-29

Applicant: Intel Corporation

Inventor： Xing Sun ,  Srinivas Pietambaram ,  Darko Grujicic ,  Rengarajan Shanmugam ,  Brian Balch ,  Micah Armstrong ,  Qiang Li ,  Marcel Wall ,  Rahul Manepalli

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/00 ,  H01L23/15 ,  H01L25/065

Abstract: Integrated circuit (IC) die packages including a glass with conductive through-glass vias (TGVs). The TGVs are lined with a buffer comprising an inorganic material having a low elastic (Young's) modulus. The buffer may thereby accommodate internal stress between the glass and through via metallization formed over the buffer. The compliant inorganic material may be a metal or metal alloy, for example, different than that of the via metallization. The inorganic material may also be a metal nitride, metal silicide, or metal carbide. A TGV buffer may be one material layer of a stack comprising two or more material layers deposited upon TGV sidewall surfaces. A routing structure may be built-up on at least one side of the glass and IC die assembled to the routing structure. The buffer Ipresent within the TGVs may be absent from metal features of the routing structure.