公开(公告)号：US20170221842A1

公开(公告)日：2017-08-03

申请号：US15420815

申请日：2017-01-31

Applicant: Infineon Technologies AG

Inventor： Roman ROTH ,  Frank HILLE ,  Hans-Joachim SCHULZE

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/02181 ,  H01L2224/0219 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03848 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/05664 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/491 ,  H01L2224/4911 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2224/45099

Abstract: A power semiconductor device, a power semiconductor module and a power semiconductor device processing method are provided. The power semiconductor device includes a first load terminal structure, a second load terminal structure, and a semiconductor structure electrically coupled to each load terminal structure and configured to carry a load current. The first load terminal structure includes a conductive layer in contact with the semiconductor structure, a bonding block configured to be contacted by at least one bond wire and to receive at least a part of the load current from the at least one bond wire and/or the conductive layer, a support block having a hardness greater than the hardness of the conductive layer and the bonding block. The bonding block is mounted on the conductive layer via the support block, and a zone is arranged within the conductive layer and/or the bonding block, the zone exhibiting nitrogen atoms.

公开(公告)号：US20180366428A1

公开(公告)日：2018-12-20

申请号：US16059468

申请日：2018-08-09

Applicant: Infineon Technologies AG

Inventor： Roman ROTH ,  Frank HILLE ,  Hans-Joachim SCHULZE

IPC: H01L23/00

Abstract: A power semiconductor device, a power semiconductor module and a power semiconductor device processing method are provided. The power semiconductor device includes a first load terminal structure, a second load terminal structure, and a semiconductor structure electrically coupled to each load terminal structure and configured to carry a load current. The first load terminal structure includes a conductive layer in contact with the semiconductor structure, a bonding block configured to be contacted by at least one bond wire and to receive at least a part of the load current from the at least one bond wire and/or the conductive layer, a support block having a hardness greater than the hardness of the conductive layer and the bonding block. The bonding block is mounted on the conductive layer via the support block, and a zone is arranged within the conductive layer and/or the bonding block, the zone exhibiting nitrogen atoms.