公开(公告)号：US10886370B2

公开(公告)日：2021-01-05

申请号：US16669742

申请日：2019-10-31

Applicant: Infineon Technologies AG

Inventor： Florian Grasse ,  Axel Sascha Baier ,  Wolfgang Bergner ,  Barbara Englert ,  Christian Strenger

IPC: H01L29/10 ,  H01L29/16 ,  H01L29/08 ,  H01L21/04 ,  H01L29/78

Abstract: A silicon carbide body includes a drift structure having a first conductivity type, a body region, and a shielding region. The body and shielding regions, of a second conductivity type, are located between the drift structure and a first surface of the silicon carbide body. First and second trench gate stripes extend into the silicon carbide body. The body region is in contact with a first sidewall of the first trench gate stripe. The shielding region is in contact with a second sidewall of the second trench gate stripe. The second sidewall has a first length in a lateral first direction parallel to the first surface. A supplementary region of the first conductivity type contacts one or more interface areas of the second sidewall. The one or more interface areas have a combined second length along the first direction, the second length being at most 40% of the first length.