公开(公告)号：US20040113278A1

公开(公告)日：2004-06-17

申请号：US10319032

申请日：2002-12-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Timothy J. Dalton ,  Sanjit K. Das ,  Brett H. Engel ,  Brian W. Herbst ,  Habib Hichri ,  Bernd E. Kastenmeier ,  Kelly Malone ,  Jeffrey R. Marino ,  Arthur Martin ,  Vincent J. McGahay ,  Ian D. Melville ,  Chandrasekhar Narayan ,  Kevin S. Petrarca ,  Richard P. Volant

IPC: H01L023/48

CPC classification number: H01L21/76808 ,  H01L21/76801 ,  H01L21/76831 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: An interconnect structure for a semiconductor device includes an organic, low dielectric constant (low-k) dielectric layer formed over a lower metallization level. A via formed is within the low-k dielectric layer, the via connecting a lower metallization line formed in the lower metallization level with an upper metallization line formed in an upper metallization level. The via is surrounded by a structural collar selected from a material having a coefficient of thermal expansion (CTE) so as to protect the via from shearing forces following a thermal expansion of the low-k dielectric layer.

公开(公告)号：US20040013887A1

公开(公告)日：2004-01-22

申请号：US10199287

申请日：2002-07-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Habib Hichri ,  Kelly Malone ,  Arthur Martin

IPC: H01L021/00

CPC classification number: H01L21/02203 ,  C08L71/00 ,  C09J179/08 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/312 ,  Y02P20/544 ,  Y10T428/31663 ,  Y10T428/31667 ,  Y10T428/31721

Abstract: A semiconductor wafer provided with a thermosetting porous insulating film, wherein the insulating film is made porous, cured and polymerized on the wafer. The film is characterized by a very low dielectric constant based on its constituency and porosity, the latter property of which is caused by the inclusion of liquid or supercritical carbon dioxide in the polymeric reaction mixture.

公开(公告)号：US20040094839A1

公开(公告)日：2004-05-20

申请号：US10294139

申请日：2002-11-14

Applicant: International Business Machines Corporation

Inventor： John A. Fitzsimmons ,  Stephen E. Greco ,  Jia Lee ,  Stephen M. Gates ,  Terry Spooner ,  Matthew S. Angyal ,  Habib Hichri ,  Theordorus E. Standaert ,  Glenn A. Biery

IPC: H01L023/48

CPC classification number: H01L21/76832 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76835 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.

Abstract translation: 公开了一种具有混合电介质的高级后端（BEOL）互连结构。 用于通孔电平的层间电介质（ILD）优选地不同于线路电平的ILD。 在优选实施例中，通孔级ILD由低k SiCOH材料形成，并且线级ILD由低k聚合物热固性材料形成。