公开(公告)号：US20040113278A1

公开(公告)日：2004-06-17

申请号：US10319032

申请日：2002-12-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Timothy J. Dalton ,  Sanjit K. Das ,  Brett H. Engel ,  Brian W. Herbst ,  Habib Hichri ,  Bernd E. Kastenmeier ,  Kelly Malone ,  Jeffrey R. Marino ,  Arthur Martin ,  Vincent J. McGahay ,  Ian D. Melville ,  Chandrasekhar Narayan ,  Kevin S. Petrarca ,  Richard P. Volant

IPC: H01L023/48

CPC classification number: H01L21/76808 ,  H01L21/76801 ,  H01L21/76831 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: An interconnect structure for a semiconductor device includes an organic, low dielectric constant (low-k) dielectric layer formed over a lower metallization level. A via formed is within the low-k dielectric layer, the via connecting a lower metallization line formed in the lower metallization level with an upper metallization line formed in an upper metallization level. The via is surrounded by a structural collar selected from a material having a coefficient of thermal expansion (CTE) so as to protect the via from shearing forces following a thermal expansion of the low-k dielectric layer.

公开(公告)号：US20040013887A1

公开(公告)日：2004-01-22

申请号：US10199287

申请日：2002-07-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Habib Hichri ,  Kelly Malone ,  Arthur Martin

IPC: H01L021/00

CPC classification number: H01L21/02203 ,  C08L71/00 ,  C09J179/08 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/312 ,  Y02P20/544 ,  Y10T428/31663 ,  Y10T428/31667 ,  Y10T428/31721

Abstract: A semiconductor wafer provided with a thermosetting porous insulating film, wherein the insulating film is made porous, cured and polymerized on the wafer. The film is characterized by a very low dielectric constant based on its constituency and porosity, the latter property of which is caused by the inclusion of liquid or supercritical carbon dioxide in the polymeric reaction mixture.