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公开(公告)号：US09385105B2
公开(公告)日：2016-07-05
申请号：US14370971
申请日：2013-01-10
发明人： Thorsten Meyer , Gerald Ofner , Bernd Waidhas , Hans-Joachim Barth , Sven Albers , Reinhard Golly , Philipp Riess , Bernd Ebersberger
IPC分类号： H01L23/48 , H01L23/00 , H01L25/065 , H01L25/16 , H01L23/538 , H01L23/498 , H01L23/31 , H01L21/56
CPC分类号： H01L24/81 , H01L21/568 , H01L23/3135 , H01L23/49811 , H01L23/49816 , H01L23/49838 , H01L23/5389 , H01L24/14 , H01L24/17 , H01L24/19 , H01L24/96 , H01L24/97 , H01L25/0655 , H01L25/0657 , H01L25/16 , H01L2224/0231 , H01L2224/02371 , H01L2224/02373 , H01L2224/02381 , H01L2224/0401 , H01L2224/04105 , H01L2224/05548 , H01L2224/12105 , H01L2224/16145 , H01L2224/16225 , H01L2924/10253 , H01L2924/12042 , H01L2924/15311 , H01L2924/181 , H01L2924/18162 , H01L2924/3511 , H01L2924/00
摘要： A semiconductor device includes: a chip having at least one electrically conductive contact at a first side of the chip; an extension layer extending laterally from one or more sides of the chip; a redistribution layer on a surface of the extension layer and the first side, and coupled to the contact; an interposer having at least one electrically conductive contact at a first surface of the interposer and coupled to the redistribution layer, and at least one electrically conductive contact at a second surface of the interposer opposite to the first surface; a molding material at least partially enclosing the chip and the redistribution layer, and in contact with the interposer. Another semiconductor device includes: an interposer; a redistribution layer over the interposer; a circuit having first and second circuit portions, wherein the redistribution layer includes the first circuit portion, and the interposer includes the second circuit portion.
摘要翻译： 半导体器件包括：在芯片的第一侧具有至少一个导电触点的芯片; 从芯片的一个或多个侧面横向延伸的延伸层; 在所述延伸层和所述第一侧的表面上的再分布层，并且耦合到所述接触件; 插入器，在所述插入器的第一表面处具有至少一个导电接触并且耦合到所述再分配层，以及在所述插入件的与所述第一表面相对的第二表面处的至少一个导电接触; 至少部分地包围所述芯片和所述再分配层并且与所述插入件接触的模制材料。 另一半导体器件包括：插入器; 在内插器上的再分配层; 具有第一和第二电路部分的电路，其中再分配层包括第一电路部分，并且插入器包括第二电路部分。
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2.发明授权公开(公告)号：US10049932B2
公开(公告)日：2018-08-14
申请号：US15469801
申请日：2017-03-27
发明人： Hans-Joachim Barth
IPC分类号： H01L21/44 , H01L21/768 , H01L21/02 , H01L23/48
摘要： A semiconductor device includes a substrate having a top surface. A semiconductor circuit defines a circuit area on the top surface of the substrate. An interconnect is spaced apart from the circuit area and extends from the top surface into the substrate. The interconnect includes a sidewall formed of an electrically insulating material. An opening is provided in the sidewall.
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3.发明申请公开(公告)号：US20170200645A1
公开(公告)日：2017-07-13
申请号：US15469801
申请日：2017-03-27
发明人： Hans-Joachim Barth
IPC分类号： H01L21/768 , H01L23/48 , H01L21/02
CPC分类号： H01L21/76898 , H01L21/02203 , H01L21/76802 , H01L21/7682 , H01L21/76828 , H01L21/76831 , H01L21/76895 , H01L23/481 , H01L2924/0002 , H01L2924/0001 , H01L2924/00
摘要： A semiconductor device includes a substrate having a top surface. A semiconductor circuit defines a circuit area on the top surface of the substrate. An interconnect is spaced apart from the circuit area and extends from the top surface into the substrate. The interconnect includes a sidewall formed of an electrically insulating material. An opening is provided in the sidewall.
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公开(公告)号：US20160071766A1
公开(公告)日：2016-03-10
申请号：US14934554
申请日：2015-11-06
发明人： Hans-Joachim Barth
IPC分类号： H01L21/768 , H01L21/02
CPC分类号： H01L21/76898 , H01L21/02203 , H01L21/76802 , H01L21/7682 , H01L21/76828 , H01L21/76831 , H01L21/76895 , H01L23/481 , H01L2924/0002 , H01L2924/0001 , H01L2924/00
摘要： A semiconductor device includes a substrate having a top surface. A semiconductor circuit defines a circuit area on the top surface of the substrate. An interconnect is spaced apart from the circuit area and extends from the top surface into the substrate. The interconnect includes a sidewall formed of an electrically insulating material. An opening is provided in the sidewall.
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