- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
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申请号: US14934554申请日: 2015-11-06
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公开(公告)号: US20160071766A1公开(公告)日: 2016-03-10
- 发明人: Hans-Joachim Barth
- 申请人: Intel Deutschland GmbH
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L21/02
摘要:
A semiconductor device includes a substrate having a top surface. A semiconductor circuit defines a circuit area on the top surface of the substrate. An interconnect is spaced apart from the circuit area and extends from the top surface into the substrate. The interconnect includes a sidewall formed of an electrically insulating material. An opening is provided in the sidewall.
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