公开(公告)号：US20210384094A1

公开(公告)日：2021-12-09

申请号：US17406512

申请日：2021-08-19

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Robert L. Sankman ,  Scott M. Mokler ,  Richard Christopher Stamey ,  Amruthavalli Pallavi Alur

IPC: H01L23/13 ,  H01L23/498 ,  H01L23/538 ,  H01L23/488 ,  H01L23/485

Abstract: Hybrid microelectronic substrates, and related devices and methods, are disclosed herein. In some embodiments, a hybrid microelectronic substrate may include a low-density microelectronic substrate having a recess at a first surface, and a high-density microelectronic substrate disposed in the recess and coupled to a bottom of the recess via solder.

公开(公告)号：US11923257B2

公开(公告)日：2024-03-05

申请号：US17406512

申请日：2021-08-19

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Robert L. Sankman ,  Scott M. Mokler ,  Richard Christopher Stamey ,  Amruthavalli Pallavi Alur

IPC: H01L23/498 ,  H01L23/13 ,  H01L23/485 ,  H01L23/488 ,  H01L23/538

CPC classification number: H01L23/13 ,  H01L23/485 ,  H01L23/488 ,  H01L23/49816 ,  H01L23/5383 ,  H01L23/5385 ,  H01L2224/16225 ,  H01L2924/15311

Abstract: Hybrid microelectronic substrates, and related devices and methods, are disclosed herein. In some embodiments, a hybrid microelectronic substrate may include a low-density microelectronic substrate having a recess at a first surface, and a high-density microelectronic substrate disposed in the recess and coupled to a bottom of the recess via solder.

公开(公告)号：US20200335444A1

公开(公告)日：2020-10-22

申请号：US16918900

申请日：2020-07-01

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Robert L. Sankman ,  Scott M. Mokler ,  Richard C. Stamey

IPC: H01L23/538 ,  H01L21/683 ,  H01L21/48 ,  H01L23/498

Abstract: A hybrid microelectronic substrate may be formed by the incorporation of a high density microelectronic patch substrate within a lower density microelectronic substrate. The hybrid microelectronic substrate may allow for direct flip chip attachment of a microelectronic device having high density interconnections to the high density microelectronic patch substrate portion of the hybrid microelectronic substrate, while allowing for lower density interconnection and electrical routes in areas where high density interconnections are not required.

公开(公告)号：US11114353B2

公开(公告)日：2021-09-07

申请号：US16080093

申请日：2016-03-30

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Robert L. Sankman ,  Scott M. Mokler ,  Richard Christopher Stamey ,  Amruthavalli Pallavi Alur

IPC: H01L23/13 ,  H01L23/498 ,  H01L23/538 ,  H01L23/488 ,  H01L23/485

Abstract: Hybrid microelectronic substrates, and related devices and methods, are disclosed herein. In some embodiments, a hybrid microelectronic substrate may include a low-density microelectronic substrate having a recess at a first surface, and a high-density microelectronic substrate disposed in the recess and coupled to a bottom of the recess via solder.

公开(公告)号：US10716214B2

公开(公告)日：2020-07-14

申请号：US15771774

申请日：2015-12-03

Applicant: INTEL CORPORATION

Inventor： Robert Starkston ,  Richard C. Stamey ,  Robert L. Sankman ,  Scott M. Mokler

IPC: H05K1/18 ,  H05K1/11 ,  H05K1/14 ,  H05K3/42 ,  H05K3/00

Abstract: A hybrid microelectronic substrate may be formed by the incorporation of a high density microelectronic patch substrate within a lower density microelectronic substrate. The hybrid microelectronic substrate may allow for direct flip chip attachment of a microelectronic device having high density interconnections to the high density microelectronic patch substrate portion of the hybrid microelectronic substrate, while allowing for lower density interconnection and electrical routes in areas where high density interconnections are not required.

公开(公告)号：US11444033B2

公开(公告)日：2022-09-13

申请号：US16918900

申请日：2020-07-01

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Robert L. Sankman ,  Scott M. Mokler ,  Richard C. Stamey

IPC: H01L23/538 ,  H01L21/683 ,  H01L21/48 ,  H01L23/498 ,  H01L25/065

Abstract: A hybrid microelectronic substrate may be formed by the incorporation of a high density microelectronic patch substrate within a lower density microelectronic substrate. The hybrid microelectronic substrate may allow for direct flip chip attachment of a microelectronic device having high density interconnections to the high density microelectronic patch substrate portion of the hybrid microelectronic substrate, while allowing for lower density interconnection and electrical routes in areas where high density interconnections are not required.

公开(公告)号：US10159152B2

公开(公告)日：2018-12-18

申请号：US14977321

申请日：2015-12-21

Applicant: Intel Corporation

Inventor： Ladd D. Campbell ,  Scott M. Mokler ,  Juan Landeros, Jr. ,  Michael J. Hill ,  Jin Zhao

IPC: H05K1/00 ,  H05K1/18 ,  H05K1/02 ,  H05K1/11 ,  H05K3/34 ,  H05K3/46

Abstract: Embodiments of the invention include a printed circuit board (PCB) assembly that includes advanced component in cavity (ACC) technology and methods of forming such PCB assemblies. In one embodiment, the PCB assembly may include a PCB that has a cavity formed on a first surface of the PCB. A plurality of contacts may be formed in the cavity. The cavity provides a location where components may be electrically coupled to the PCB. Additionally, a package that is mounted to the PCB may extend over the cavity. Since the package passes directly over the component, the components may be used to electrically couple the package to one or more of the contacts formed in the cavity. Accordingly, embodiments of the invention allow for the surface area used for components to be reduced, and also improves electrical performance of the PCB assembly by positioning the components proximate to the package.

公开(公告)号：US20180343744A1

公开(公告)日：2018-11-29

申请号：US15771774

申请日：2015-12-03

Applicant: INTEL CORPORATION

Inventor： Robert Starkston ,  Richard C. Stamey ,  Robert L. Sankman ,  Scott M. Mokler

IPC: H05K1/18 ,  H05K1/11 ,  H05K1/14 ,  H05K3/42

Abstract: A hybrid microelectronic substrate may be formed by the incorporation of a high density microelectronic patch substrate within a lower density microelectronic substrate. The hybrid microelectronic substrate may allow for direct flip chip attachment of a microelectronic device having high density interconnections to the high density microelectronic patch substrate portion of the hybrid microelectronic substrate, while allowing for lower density interconnection and electrical routes in areas where high density interconnections are not required.

公开(公告)号：US10763215B2

公开(公告)日：2020-09-01

申请号：US15774221

申请日：2015-12-09

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Robert L. Sankman ,  Scott M. Mokler ,  Richard C. Stamey

IPC: H01L23/538 ,  H01L21/683 ,  H01L21/48 ,  H01L23/498 ,  H01L25/065

Abstract: A hybrid microelectronic substrate may be formed by the incorporation of a high density microelectronic patch substrate within a lower density microelectronic substrate. The hybrid microelectronic substrate may allow for direct flip chip attachment of a microelectronic device having high density interconnections to the high density microelectronic patch substrate portion of the hybrid microelectronic substrate, while allowing for lower density interconnection and electrical routes in areas where high density interconnections are not required.

公开(公告)号：US20190057937A1

公开(公告)日：2019-02-21

申请号：US15774221

申请日：2015-12-09

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Robert L. Sankman ,  Scott M. Mokler ,  Richard C. Stamey

IPC: H01L23/538 ,  H01L23/498

CPC classification number: H01L23/5385 ,  H01L21/486 ,  H01L21/6835 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49894 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L25/0655 ,  H01L2221/68345

Abstract: A hybrid microelectronic substrate may be formed by the incorporation of a high density microelectronic patch substrate within a lower density microelectronic substrate. The hybrid microelectronic substrate may allow for direct flip chip attachment of a microelectronic device having high density interconnections to the high density microelectronic patch substrate portion of the hybrid microelectronic substrate, while allowing for lower density interconnection and electrical routes in areas where high density interconnections are not required.