公开(公告)号：US20160141208A1

公开(公告)日：2016-05-19

申请号：US14541239

申请日：2014-11-14

申请人： INFINEON TECHNOLOGIES AG

发明人： Hirschler Joachim ,  Roesner Michael ,  Heinrici Juch Markus ,  Stranzl Gudrun ,  Mischitz Martin ,  Zgaga Martin

IPC分类号： H01L21/78 ,  H01L21/324 ,  H01L23/29 ,  H01L21/3213

CPC分类号： H01L21/78 ,  H01L21/288 ,  H01L21/3213 ,  H01L21/6835 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/94 ,  H01L24/95 ,  H01L2221/68327 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2224/03002 ,  H01L2224/03005 ,  H01L2224/03009 ,  H01L2224/0332 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03464 ,  H01L2224/03505 ,  H01L2224/03848 ,  H01L2224/039 ,  H01L2224/05794 ,  H01L2224/05847 ,  H01L2224/06181 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/03 ,  H01L2221/68381

摘要： According to various embodiments, a method for processing a semiconductor substrate may include: covering a plurality of die regions of the semiconductor substrate with a metal; forming a plurality of dies from the semiconductor substrate, wherein each die of the plurality of dies is covered with the metal; and, subsequently, annealing the metal covering at least one die of the plurality of dies.

摘要翻译： 根据各种实施例，用于处理半导体衬底的方法可以包括：用金属覆盖半导体衬底的多个管芯区域; 从所述半导体衬底形成多个管芯，其中所述多个管芯中的每个管芯被所述金属覆盖; 并且随后对所述多个管芯中的至少一个管芯进行金属覆盖退火。