Invention Application
- Patent Title: METHOD FOR PROCESSING A SEMICONDUCTOR SUBSTRATE AND A METHOD FOR PROCESSING A SEMICONDUCTOR WAFER
- Patent Title (中): 半导体基板的加工方法及半导体波导的处理方法
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Application No.: US14541239Application Date: 2014-11-14
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Publication No.: US20160141208A1Publication Date: 2016-05-19
- Inventor: Hirschler Joachim , Roesner Michael , Heinrici Juch Markus , Stranzl Gudrun , Mischitz Martin , Zgaga Martin
- Applicant: INFINEON TECHNOLOGIES AG
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/324 ; H01L23/29 ; H01L21/3213
Abstract:
According to various embodiments, a method for processing a semiconductor substrate may include: covering a plurality of die regions of the semiconductor substrate with a metal; forming a plurality of dies from the semiconductor substrate, wherein each die of the plurality of dies is covered with the metal; and, subsequently, annealing the metal covering at least one die of the plurality of dies.
Public/Granted literature
- US09673096B2 Method for processing a semiconductor substrate and a method for processing a semiconductor wafer Public/Granted day:2017-06-06
Information query
IPC分类:
