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公开(公告)号：US20190027464A1
公开(公告)日：2019-01-24
申请号：US15656388
申请日：2017-07-21
发明人： Martin Mischitz , Harald Huber , Michael Knabl , Claudia Sgiarovello , Caterina Travan , Andrew Wood
IPC分类号： H01L23/00 , H01L25/065 , H01L25/00 , H01L23/31
摘要： According to an embodiment of a method of manufacturing a plurality of semiconductor devices on a wafer, the method includes forming a structure layer comprising a plurality of same semiconductor device structures and providing a protective layer on the structure layer. The protective layer on a first one of the plurality of semiconductor device structures differs from the protective layer on a second one of the plurality of semiconductor device structures.
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公开(公告)号：US09929111B2
公开(公告)日：2018-03-27
申请号：US15461500
申请日：2017-03-17
IPC分类号： H01L21/00 , H01L23/00 , H01L21/02 , H01L23/532 , H01L21/762
CPC分类号： H01L24/03 , H01L21/02203 , H01L21/02513 , H01L21/76259 , H01L23/53238 , H01L24/05 , H01L2224/0331 , H01L2224/0345 , H01L2224/03505 , H01L2224/03602 , H01L2224/03616 , H01L2224/0384 , H01L2224/05541 , H01L2224/05551 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48463 , H01L2924/3511 , H01L2924/35121
摘要： A method of manufacturing a layer structure includes: forming a first layer over a substrate; planarizing the first layer to form a planarized surface of the first layer; and forming a second layer over the planarized surface; wherein a porosity of the first layer is greater than a porosity of the substrate and greater than a porosity of the second layer; wherein the second layer is formed by physical vapor deposition; and wherein the first layer and the second layer are formed from the same solid material.
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公开(公告)号：US09844134B2
公开(公告)日：2017-12-12
申请号：US14608884
申请日：2015-01-29
发明人： Martin Mischitz , Markus Heinrici , Stefan Schwab
IPC分类号： H05K1/09 , H05K1/11 , H05K3/22 , H01L23/532 , H01L21/288
CPC分类号： H05K1/09 , H01L21/288 , H01L23/53228 , H05K1/11 , H05K3/22
摘要： A device comprises a base element and a metallization layer over the base element. The metallization layer comprises pores and has a varying degree of porosity, the degree of porosity being higher in a portion adjacent to the base element than in a portion remote from the base element.
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4.发明申请Method for Producing a Copper Layer on a Semiconductor Body Using a Printing Process 有权使用印刷方法在半导体本体上生产铜层的方法公开(公告)号：US20150214095A1
公开(公告)日：2015-07-30
申请号：US14163694
申请日：2014-01-24
IPC分类号： H01L21/768 , H01L21/027 , H01L23/532 , H01L23/00
CPC分类号： H01L21/7688 , H01L21/0272 , H01L21/288 , H01L21/76883 , H01L21/76885 , H01L23/53228 , H01L23/5328 , H01L23/562 , H01L2924/0002 , H01L2924/00
摘要： A method for producing a metal layer on a wafer is described. In one embodiment the method comprises providing a semiconductor wafer including a coating, printing a metal particle paste on the semiconductor wafer thereby forming a metal layer and heating the metal layer in a reductive gas for sintering the metal particle paste or for annealing a sintered metal particle paste in an oven.
摘要翻译： 对晶片上的金属层的制造方法进行说明。 在一个实施方案中，该方法包括提供包括涂层的半导体晶片，在半导体晶片上印刷金属颗粒糊料，从而形成金属层，并且在用于烧结金属颗粒糊料的还原性气体中加热金属层或者使烧结金属颗粒退火 贴在烤箱里
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公开(公告)号：US11488921B2
公开(公告)日：2022-11-01
申请号：US17060434
申请日：2020-10-01
发明人： Ali Roshanghias , Alfred Binder , Barbara Eichinger , Stefan Karner , Martin Mischitz , Rainer Pelzer
IPC分类号： H01L23/00 , H01L25/00 , H01L25/065
摘要： A multi-chip device is provided. The multi-chip device includes a first chip, a second chip mounted on the first chip, and a hardened printed or sprayed electrically conductive material forming a sintered electrically conductive interface between the first chip and the second chip.
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6.发明申请公开(公告)号：US20200161269A1
公开(公告)日：2020-05-21
申请号：US16685318
申请日：2019-11-15
发明人： Francisco Javier Santos Rodriguez , Fabian Craes , Barbara Eichinger , Martin Mischitz , Frederik Otto , Fabien Thion
IPC分类号： H01L23/00 , H01L21/48 , H01L21/428
摘要： A semiconductor device and method for fabricating a semiconductor device, comprising a paste layer is disclosed. In one example the method comprises attaching a substrate to a carrier, wherein the substrate comprises a plurality of semiconductor dies. A layer of a paste is applied to the substrate. The layer above cutting regions of the substrate is structured. The substrate is cut along the cutting regions.
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公开(公告)号：US09786568B2
公开(公告)日：2017-10-10
申请号：US15048614
申请日：2016-02-19
IPC分类号： H01L21/66 , H01L21/768 , H01L23/528 , H01L23/522 , H01L23/525 , H01L21/67
CPC分类号： H01L22/20 , H01L21/76886 , H01L22/14 , H01L23/5252 , H01L23/5256
摘要： A method of manufacturing a wafer. The method includes providing a wafer that includes a plurality of semiconductor device structures, and testing at least one of the plurality of semiconductor device structures. Based on a test result, a substance is provided on a selected portion of the wafer to selectively configure a circuit element within the at least one of the plurality of semiconductor device structures.
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公开(公告)号：US20170243795A1
公开(公告)日：2017-08-24
申请号：US15048658
申请日：2016-02-19
IPC分类号： H01L21/66 , H01L25/065 , H01L23/525
CPC分类号： H01L22/22 , H01L22/14 , H01L22/20 , H01L23/525 , H01L23/5252 , H01L23/5256 , H01L25/0657
摘要： A method of manufacturing a wafer. The method includes providing a wafer and testing the wafer. Based on a test result, a substance is selectively provided on the wafer to obtain an altered wafer that has at least one selected portion altered. The method includes forming a structural layer over the altered wafer.
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9.发明授权公开(公告)号：US09620466B1
公开(公告)日：2017-04-11
申请号：US14953456
申请日：2015-11-30
IPC分类号： H01L21/00 , H01L23/00 , H01L21/02 , H01L23/532
CPC分类号： H01L24/03 , H01L21/02203 , H01L21/02513 , H01L21/76259 , H01L23/53238 , H01L24/05 , H01L2224/0331 , H01L2224/0345 , H01L2224/03505 , H01L2224/03602 , H01L2224/03616 , H01L2224/0384 , H01L2224/05541 , H01L2224/05551 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48463 , H01L2924/3511 , H01L2924/35121
摘要： A method of manufacturing an electronic device may include: forming at least one electronic component in a substrate; forming a contact pad in electrical contact with the at least one electronic component; wherein forming the contact pad includes: forming a first layer over the substrate; planarizing the first layer to form a planarized surface of the first layer; and forming a second layer over the planarized surface, wherein the second layer has a lower porosity than the first layer.
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10.发明授权公开(公告)号：US11329021B2
公开(公告)日：2022-05-10
申请号：US16685318
申请日：2019-11-15
发明人： Francisco Javier Santos Rodriguez , Fabian Craes , Barbara Eichinger , Martin Mischitz , Frederik Otto , Fabien Thion
IPC分类号： H01L23/00 , H01L21/48 , H01L21/428 , H01L21/782
摘要： A semiconductor device and method for fabricating a semiconductor device, comprising a paste layer is disclosed. In one example the method comprises attaching a substrate to a carrier, wherein the substrate comprises a plurality of semiconductor dies. A layer of a paste is applied to the substrate. The layer above cutting regions of the substrate is structured. The substrate is cut along the cutting regions.
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