公开(公告)号：US12013383B2

公开(公告)日：2024-06-18

申请号：US17645627

申请日：2021-12-22

Applicant: Infineon Technologies AG

Inventor： Laurent Beaurenaut ,  Alexandra Marina Roth ,  Caterina Travan ,  Alexander Zoepfl

IPC: G01N33/00 ,  G01N27/30

CPC classification number: G01N33/0036 ,  G01N27/308

Abstract: A gas sensing device comprises a sensing unit for sensing a target gas, the sensing unit comprising a carbon-based sensing layer which is sensitive to the target gas. The gas sensing device further comprises a controller unit for monitoring an exposure of the sensing layer to the target gas. The controller unit further initializes a recovery sequence for the sensing unit depending on an exposure of the sensing unit to the target gas. Further, the gas sensing device comprises a heating electrode for heating the sensing layer during the recovery sequence.

公开(公告)号：US10580753B2

公开(公告)日：2020-03-03

申请号：US15656388

申请日：2017-07-21

Applicant: Infineon Technologies AG

Inventor： Martin Mischitz ,  Harald Huber ,  Michael Knabl ,  Claudia Sgiarovello ,  Caterina Travan ,  Andrew Wood

IPC: H01L23/00 ,  H01L23/525 ,  H01L23/31 ,  H01L25/065 ,  H01L25/00

Abstract: According to an embodiment of a method of manufacturing a plurality of semiconductor devices on a wafer, the method includes forming a structure layer comprising a plurality of same semiconductor device structures and providing a protective layer on the structure layer. The protective layer on a first one of the plurality of semiconductor device structures differs from the protective layer on a second one of the plurality of semiconductor device structures.

公开(公告)号：US11908763B2

公开(公告)日：2024-02-20

申请号：US17483312

申请日：2021-09-23

Applicant: Infineon Technologies AG

Inventor： Prashanth Makaram ,  John Cooper ,  Joerg Ortner ,  Stephan Pindl ,  Caterina Travan ,  Alexander Zoepfl

IPC: H01L23/31 ,  H01L21/02

CPC classification number: H01L23/3171 ,  H01L21/02282 ,  H01L23/3178

Abstract: An apparatus includes a semiconductor-based substrate with a functional structure that is formed in or on the semiconductor-based substrate. The apparatus includes a frame structure surrounding the functional structure and includes a coating that covers the functional structure and is delimited by the frame structure.

公开(公告)号：US20220013424A1

公开(公告)日：2022-01-13

申请号：US17483312

申请日：2021-09-23

Applicant: Infineon Technologies AG

Inventor： Prashanth Makaram ,  John Cooper ,  Joerg Ortner ,  Stephan Pindl ,  Caterina Travan ,  Alexander Zoepfl

IPC: H01L23/31 ,  H01L21/02

Abstract: An apparatus includes a semiconductor-based substrate with a functional structure that is formed in or on the semiconductor-based substrate. The apparatus includes a frame structure surrounding the functional structure and includes a coating that covers the functional structure and is delimited by the frame structure.

公开(公告)号：US11953481B2

公开(公告)日：2024-04-09

申请号：US17647651

申请日：2022-01-11

Applicant: Infineon Technologies AG

Inventor： Caterina Travan ,  Cecilia Carbonelli ,  Ulrich Krumbein

IPC: G01N33/00 ,  G01N27/12 ,  G01N27/02 ,  G01N27/22

CPC classification number: G01N33/0006 ,  G01N27/12 ,  G01N33/0008 ,  G01N33/0027 ,  G01N33/0034 ,  G01N27/028 ,  G01N2027/222

Abstract: A method for determining a calibrated measurement value for a concentration of the target gas comprises obtaining a measurement signal based on the concentration of the target gas. The method further comprises determining the calibrated measurement value based on the measurement signal and based on a calibration model. The calibration model is based on calibration data of a plurality of test sensor units having the same type as the sensor unit.

公开(公告)号：US20220236245A1

公开(公告)日：2022-07-28

申请号：US17645627

申请日：2021-12-22

Applicant: Infineon Technologies AG

Inventor： Laurent Beaurenaut ,  Alexandra Marina Roth ,  Caterina Travan ,  Alexander Zoepfl

IPC: G01N33/00 ,  G01N27/30

Abstract: A gas sensing device comprises a sensing unit for sensing a target gas, the sensing unit comprising a carbon-based sensing layer which is sensitive to the target gas. The gas sensing device further comprises a controller unit for monitoring an exposure of the sensing layer to the target gas. The controller unit further initializes a recovery sequence for the sensing unit depending on an exposure of the sensing unit to the target gas. Further, the gas sensing device comprises a heating electrode for heating the sensing layer during the recovery sequence.

公开(公告)号：US20220236207A1

公开(公告)日：2022-07-28

申请号：US17643653

申请日：2021-12-10

Applicant: Infineon Technologies AG

Inventor： Caterina Travan ,  Alexandra Marina Roth

IPC: G01N27/12 ,  G01N33/00

Abstract: A gas sensing device includes chemoresistive gas sensing elements, wherein a material composition of a first chemoresistive gas sensing element is similar to a material composition of a second chemoresistive gas sensing element, wherein the first chemoresistive gas sensing element is exposed to an ambient mixture of gases so that first sensing signals depend on a concentration of a first gas and on a concentration of a second gas, wherein the gas sensing device includes a gas filter so that the second sensing signals depend on the concentration of the first gas to a lesser degree than the first sensor signals and so that the second sensing signals depend on the concentration of the second gas, and wherein the gas sensing device estimates the concentration of the first gas and/or the concentration of the second gas based on the first sensing signals and the second sensing signals.

公开(公告)号：US20230358699A1

公开(公告)日：2023-11-09

申请号：US18355043

申请日：2023-07-19

Applicant: Infineon Technologies AG

Inventor： Caterina Travan ,  Alexandra Marina Roth

IPC: G01N27/12 ,  G01N33/00

CPC classification number: G01N27/128 ,  G01N33/0014

Abstract: A gas sensing device includes chemoresistive gas sensing elements, wherein a material composition of a first chemoresistive gas sensing element is similar to a material composition of a second chemoresistive gas sensing element, wherein the first chemoresistive gas sensing element is exposed to an ambient mixture of gases so that first sensing signals depend on a concentration of a first gas and on a concentration of a second gas, wherein the gas sensing device includes a gas filter so that the second sensing signals depend on the concentration of the first gas to a lesser degree than the first sensor signals and so that the second sensing signals depend on the concentration of the second gas, and wherein the gas sensing device estimates the concentration of the first gas and/or the concentration of the second gas based on the first sensing signals and the second sensing signals.

公开(公告)号：US20220236244A1

公开(公告)日：2022-07-28

申请号：US17647651

申请日：2022-01-11

Applicant: Infineon Technologies AG

Inventor： Caterina Travan ,  Cecilia Carbonelli ,  Ulrich Krumbein

IPC: G01N33/00

Abstract: A method for determining a calibrated measurement value for a concentration of the target gas comprises obtaining a measurement signal based on the concentration of the target gas. The method further comprises determining the calibrated measurement value based on the measurement signal and based on a calibration model. The calibration model is based on calibration data of a plurality of test sensor units having the same type as the sensor unit.

公开(公告)号：US11189539B2

公开(公告)日：2021-11-30

申请号：US16433278

申请日：2019-06-06

Applicant: Infineon Technologies AG

Inventor： Prashanth Makaram ,  John Cooper ,  Joerg Ortner ,  Stephan Pindl ,  Caterina Travan ,  Alexander Zoepfl

IPC: H01L23/31 ,  H01L21/02

Abstract: An apparatus includes a semiconductor-based substrate with a functional structure that is formed in or on the semiconductor-based substrate. The apparatus includes a frame structure surrounding the functional structure and includes a coating that covers the functional structure and is delimited by the frame structure.