Invention Grant
- Patent Title: Method of manufacturing an integrated circuit substrate
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Application No.: US15048614Application Date: 2016-02-19
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Publication No.: US09786568B2Publication Date: 2017-10-10
- Inventor: Claudia Sgiarovello , Martin Mischitz , Andrew Wood
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/768 ; H01L23/528 ; H01L23/522 ; H01L23/525 ; H01L21/67
Abstract:
A method of manufacturing a wafer. The method includes providing a wafer that includes a plurality of semiconductor device structures, and testing at least one of the plurality of semiconductor device structures. Based on a test result, a substance is provided on a selected portion of the wafer to selectively configure a circuit element within the at least one of the plurality of semiconductor device structures.
Public/Granted literature
- US20170243794A1 METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT SUBSTRATE Public/Granted day:2017-08-24
Information query
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