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    Apparatus and method for inspecting light-emitting diode dies
    1.
    发明授权
    Apparatus and method for inspecting light-emitting diode dies 有权

    公开(公告)号：US12203971B2

    公开(公告)日：2025-01-21

    申请号：US18075431

    申请日：2022-12-06

    Applicant: Industrial Technology Research Institute

    Inventor： Yan-Rung Lin ,  Chih-Hsiang Liu ,  Chung-Lun Kuo

    IPC: G01R31/26 ,  G06T7/00

    Abstract: A method for inspecting LED dies includes the following steps. First electrodes and second electrodes of LED dies to be inspected are short-circuited via a conductive layer on an inspection substrate, or an inspection bias voltage is applied between the first electrodes and the second electrodes of the LED dies. An excitation light is irradiated on the LED dies to be inspected on the inspection substrate such that the LED dies to be inspected emit a secondary light. When the first electrodes and the second electrodes of the LED dies to be inspected are open, short-circuited, and/or subjected to the inspection bias voltage, the secondary light is captured via an optical sensor. An output of the optical sensor is received via a computer and a spectrum difference of the secondary light is calculated to determine whether the LED dies are abnormal or to classify the LED dies to be inspected.

    Method for inspecting light-emitting diodes and inspection apparatus
    2.
    发明授权
    Method for inspecting light-emitting diodes and inspection apparatus 有权

    公开(公告)号：US11474144B2

    公开(公告)日：2022-10-18

    申请号：US16907120

    申请日：2020-06-19

    Applicant: Industrial Technology Research Institute

    Inventor： Yan-Rung Lin ,  Chung-Lun Kuo ,  Chih-Hsiang Liu ,  Shie-Chang Jeng

    IPC: G01R31/26 ,  G01R31/27 ,  G01N21/64 ,  G01N21/17

    Abstract: An inspection apparatus including an illumination light source, a sensing probe and a processing device is provided. The illumination light source emits an illumination beam to simultaneously irradiate the plurality of light-emitting diode. The sensing probe is configured to measure a charge distribution, an electric field distribution, or a voltage distribution on the plurality of light-emitting diodes simultaneously irradiated by the illumination beam. The processing device determines a plurality of electro-optical characteristics of the plurality of light-emitting diodes through the charge distribution, the electric field distribution, or the voltage distribution on the plurality of light-emitting diodes simultaneously irradiated by the illumination beam. Moreover, a method of for inspecting light-emitting diodes is also provided.

    Image sensor and manufacturing method thereof
    4.
    发明授权
    Image sensor and manufacturing method thereof 有权

    公开(公告)号：US10483326B2

    公开(公告)日：2019-11-19

    申请号：US15850809

    申请日：2017-12-21

    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

    Inventor： Sheng-Min Yu ,  Wen-Ching Sun ,  Pei-Wen Yen ,  Yan-Rung Lin

    IPC: H01L27/30 ,  H01L51/42 ,  H01L51/00

    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate, a patterned electrode layer, a pixel isolation structure and a patterned photo-electric conversion layer. The patterned electrode layer is disposed on the substrate and includes a plurality of electrode blocks separated from one another. The pixel isolation structure is disposed on the substrate and includes a metal halide. The patterned photo-electric conversion layer is disposed on the electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the electrode blocks. The photo-electric conversion blocks include a perovskite material. The photo-electric conversion blocks are separated from one another by the pixel isolation structure.

    Image sensor and image sensing method
    5.
    发明授权
    Image sensor and image sensing method 有权

    公开(公告)号：US10477122B2

    公开(公告)日：2019-11-12

    申请号：US15394826

    申请日：2016-12-30

    Applicant: Industrial Technology Research Institute

    Inventor： Yan-Rung Lin ,  Pei-Wen Yen ,  Siou-Cheng Lou ,  Kai-Ping Chuang

    IPC: H04N5/347 ,  H04N5/353 ,  H04N5/374 ,  H04N5/355

    Abstract: An image sensor including a plurality of pixels and a plurality of pixel sensing circuits is provided. The pixels are arranged in a pixel array. The pixels are configured to sense an image to obtain a plurality of reference pictures. The pixels include a plurality of pixel types. The pixel sensing circuits are respectively and electrically connected to the pixels. The pixel sensing circuits are configured to respectively receive a photo current generated by each of the pixels. The pixels have different characteristic curves based on the pixel types, and at least one of an electrode structure parameter and an electrode bias of each of the pixels is determined according to a correspondingly characteristic curve. In addition, an image sensing method is also provided.

    IMAGE SENSOR AND IMAGE SENSING METHOD
    6.
    发明申请
    IMAGE SENSOR AND IMAGE SENSING METHOD 审中-公开

    公开(公告)号：US20180152645A1

    公开(公告)日：2018-05-31

    申请号：US15394826

    申请日：2016-12-30

    Applicant: Industrial Technology Research Institute

    Inventor： Yan-Rung Lin ,  Pei-Wen Yen ,  Siou-Cheng Lou ,  Kai-Ping Chuang

    IPC: H04N5/347 ,  H04N5/374 ,  H04N5/353

    Abstract: An image sensor including a plurality of pixels and a plurality of pixel sensing circuits is provided. The pixels are arranged in a pixel array. The pixels are configured to sense an image to obtain a plurality of reference pictures. The pixels include a plurality of pixel types. The pixel sensing circuits are respectively and electrically connected to the pixels. The pixel sensing circuits are configured to respectively receive a photo current generated by each of the pixels. The pixels have different characteristic curves based on the pixel types, and at least one of an electrode structure parameter and an electrode bias of each of the pixels is determined according to a correspondingly characteristic curve. In addition, an image sensing method is also provided.

    PRESSURE MEASUREMENT STRUCTURE
    8.
    发明申请
    PRESSURE MEASUREMENT STRUCTURE 审中-公开
    压力测量结构

    公开(公告)号：US20140130593A1

    公开(公告)日：2014-05-15

    申请号：US13849376

    申请日：2013-03-22

    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

    Inventor： Jyun-Kai Ciou ,  Yan-Rung Lin ,  Chang-Ho Liou ,  Chang-Yi Chen

    IPC: A61B5/103

    CPC classification number: A61B5/1036 ,  A61B5/1038 ,  A61B2562/046 ,  A61B2562/166

    Abstract: A pressure measurement structure includes a first substrate, a second substrate, a first electrode layer, a second electrode layer, at least a piezoresistive layer and a wiring layer. The second substrate faces towards the first substrate. The first electrode layer is disposed on the first substrate and faces towards the second substrate. The second electrode layer is disposed on the second substrate and faces towards the first electrode layer. At least a piezoresistive layer is located between the first electrode layer and the second electrode layer. A wiring layer is disposed on the second substrate and back to the first substrate. The wiring layer includes multiple wires. Part of the wires are electrically connected to the first electrode layer. The other part of the wires are electrically connected to the second electrode layer.

    Abstract translation: 压力测量结构包括第一基板，第二基板，第一电极层，第二电极层，至少压阻层和布线层。 第二基板朝向第一基板。 第一电极层设置在第一基板上并朝向第二基板。 第二电极层设置在第二基板上并朝向第一电极层。 至少压电层位于第一电极层和第二电极层之间。 布线层设置在第二基板上并返回到第一基板。 布线层包括多根线。 电线的一部分电连接到第一电极层。 电线的另一部分电连接到第二电极层。

    METHOD FOR INSPECTING LIGHT-EMITTING DIODES AND INSPECTION APPARATUS
    10.
    发明申请
    METHOD FOR INSPECTING LIGHT-EMITTING DIODES AND INSPECTION APPARATUS 审中-公开

    公开(公告)号：US20200371152A1

    公开(公告)日：2020-11-26

    申请号：US16907120

    申请日：2020-06-19

    Applicant: Industrial Technology Research Institute

    Inventor： Yan-Rung Lin ,  Chung-Lun Kuo ,  Chih-Hsiang Liu ,  Shie-Chang Jeng

    IPC: G01R31/26 ,  G01R31/27 ,  G01N21/64 ,  G01N21/17

    Abstract: An inspection apparatus including an illumination light source, a sensing probe and a processing device is provided. The illumination light source emits an illumination beam to simultaneously irradiate the plurality of light-emitting diode. The sensing probe is configured to measure a charge distribution, an electric field distribution, or a voltage distribution on the plurality of light-emitting diodes simultaneously irradiated by the illumination beam. The processing device determines a plurality of electro-optical characteristics of the plurality of light-emitting diodes through the charge distribution, the electric field distribution, or the voltage distribution on the plurality of light-emitting diodes simultaneously irradiated by the illumination beam. Moreover, a method of for inspecting light-emitting diodes is also provided.

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