公开(公告)号：US11823895B2

公开(公告)日：2023-11-21

申请号：US17500854

申请日：2021-10-13

申请人： CALIFORNIA INSTITUTE OF TECHNOLOGY ,  Industrial Technology Research Institute

发明人： Chen-Hsuan Lu ,  Chyi-Ming Leu ,  Nai-Chang Yeh ,  Chih-Cheng Lin ,  Chi-Fu Tseng

IPC分类号： C30B25/02 ,  H01L21/02 ,  H01L29/16

CPC分类号： H01L21/02274 ,  C30B25/02 ,  H01L21/02425 ,  H01L21/02527 ,  H01L29/1606

摘要： A method of forming graphene on a flexible substrate includes providing a polymer substrate including a metal structure and providing a carbon source and a carrier gas. The method also includes subjecting the polymer substrate to a plasma enhanced chemical vapor deposition (PECVD) process and growing a graphene layer on the copper structure.

公开(公告)号：US20220115230A1

公开(公告)日：2022-04-14

申请号：US17500854

申请日：2021-10-13

申请人： CALIFORNIA INSTITUTE OF TECHNOLOGY ,  Industrial Technology Research Institute

发明人： Chen-Hsuan Lu ,  Chyi-Ming Leu ,  Nai-Chang Yeh ,  Chih-Cheng Lin ,  Chi-Fu Tseng

IPC分类号： H01L21/02 ,  H01L29/16

摘要： A method of forming graphene on a flexible substrate includes providing a polymer substrate including a metal structure and providing a carbon source and a carrier gas. The method also includes subjecting the polymer substrate to a plasma enhanced chemical vapor deposition (PECVD) process and growing a graphene layer on the copper structure.

公开(公告)号：US09982108B2

公开(公告)日：2018-05-29

申请号：US13900324

申请日：2013-05-22

申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

发明人： Chih-Cheng Lin ,  Chyi-Ming Leu

IPC分类号： C08L79/08 ,  C08K3/36 ,  C08J7/12 ,  C08K3/20 ,  C08K3/22 ,  H05K1/03

CPC分类号： C08K3/20 ,  C08J7/12 ,  C08J2379/08 ,  C08K3/22 ,  C08K3/36 ,  C08K2003/2227 ,  H05K1/0346 ,  H05K2201/0154 ,  H05K2201/0209 ,  H05K2203/0769 ,  H05K2203/0793 ,  Y10T428/259 ,  Y10T428/31721 ,  C08L79/08

摘要： The disclosure provides a polyimide-containing layer suitable for being etched by an alkaline solution and a method for etching a polyimide-containing layer. The polyimide-containing layer suitable for being etched by an alkaline solution includes 20-50 parts by weight of a silica dioxide, and 50-80 parts by weight of a polyimide.

公开(公告)号：US09388278B2

公开(公告)日：2016-07-12

申请号：US14264742

申请日：2014-04-29

申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

发明人： Chih-Cheng Lin ,  Chyi-Ming Leu ,  Yu-Ju Kuo

IPC分类号： C08G73/10 ,  C09D179/08 ,  B32B43/00 ,  B32B37/16 ,  B32B38/00

CPC分类号： C08G73/1067 ,  B32B37/16 ,  B32B38/105 ,  B32B43/006 ,  B32B2379/08 ,  B32B2457/00 ,  B32B2457/14 ,  C09D179/08

摘要： Disclosed is a substrate structure for manufacturing a flexible electronic device, including a supporting layer, a release layer covering the supporting layer with a first area, wherein the release layer is an aromatic polyimide, and a flexible layer covering the supporting layer and the release layer with a second area. The second area is greater than the first area. The adhesion force between the flexible layer and the supporting layer is stronger than the adhesion force between the release layer and the supporting layer.

摘要翻译： 公开了一种用于制造柔性电子器件的衬底结构，包括支撑层，覆盖支撑层的第一区域的剥离层，其中剥离层是芳族聚酰亚胺，以及覆盖支撑层和剥离层的柔性层 第二个区域。 第二个区域大于第一个区域。 柔性层和支撑层之间的粘附力比剥离层和支撑层之间的粘合力更强。