公开(公告)号：US08049212B2

公开(公告)日：2011-11-01

申请号：US12318212

申请日：2008-12-23

申请人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo ,  Jong-Han Jeong

发明人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo ,  Jong-Han Jeong

IPC分类号： H01L33/00 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A TFT includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a surface roughness of about 1.3 nm or less, a gate electrode on the transparent semiconductor layer, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.

摘要翻译： TFT包括基板，在基板上的透明半导体层，包含氧化锌的表面粗糙度为1.3nm以下的透明半导体层，透明半导体层上的栅极电极，栅电极之间的栅极绝缘层 并且所述透明半导体层，所述栅极绝缘层将所述栅电极与所述透明半导体层绝缘，以及所述基板上的源极和漏极，所述源极和漏极与所述透明半导体层接触。

公开(公告)号：US08003450B2

公开(公告)日：2011-08-23

申请号：US12318244

申请日：2008-12-23

申请人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo ,  Hyung-Jun Kim ,  Seong-Joon Lim

发明人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo ,  Hyung-Jun Kim ,  Seong-Joon Lim

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A thin film transistor (TFT) includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1×1014 atom/cm3 to about 1×1017 atom/cm3, a gate electrode on the substrate, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.

摘要翻译： 薄膜晶体管（TFT）包括基板，在基板上的透明半导体层，包含氧化锌的透明半导体层，其电荷浓度为约1×1014原子/ cm3至约1×1017原子/ cm3，栅极 电极，栅电极和透明半导体层之间的栅极绝缘层，栅极绝缘层与透明半导体层绝缘，源极和漏极在基板上，源电极和漏电极接触 与透明半导体层。

公开(公告)号：US07847292B2

公开(公告)日：2010-12-07

申请号：US12591548

申请日：2009-11-23

申请人： Jae-Bon Koo ,  Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

IPC分类号： H01L27/14

CPC分类号： H01L27/3276 ,  H01L27/3265

摘要： A flat panel display that can prevent a voltage drop of a driving power and, at the same time, minimizes the characteristic reduction of electronic devices located in a circuit region where various circuit devices are located includes: a substrate; an insulating film arranged on the substrate; a pixel region including at least one light emitting diode, the pixel region arranged on the insulating film and adapted to display an image; a circuit region arranged on the insulating film and including electronic devices adapted to control signals supplied to the pixel region; and a conductive film interposed between the substrate and the insulating film in a region corresponding to the pixel region and electrically connected to one electrode of the light emitting diode.

公开(公告)号：US07816666B2

公开(公告)日：2010-10-19

申请号：US11271867

申请日：2005-11-14

申请人： Jae-Bon Koo ,  Hyun-Soo Shin ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Jae-Bon Koo ,  Hyun-Soo Shin ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L21/02532 ,  C23C16/0272 ,  H01L21/02425 ,  H01L21/02488 ,  H01L29/78603

摘要： A substrate prevented from being deformed due to thermal stress or deposition stress includes a deformation preventing layer arranged on one surface of the substrate. The substrate can include a thin film transistor arranged on one surface of the substrate and the deformation preventing layer, arranged on the another surface of the substrate, and including at least one layer.

摘要翻译： 防止由于热应力或沉积应力而变形的基板包括布置在基板的一个表面上的变形防止层。 衬底可以包括布置在衬底的一个表面上的薄膜晶体管和设置在衬底的另一个表面上并且包括至少一个层的变形防止层。

公开(公告)号：US07741179B2

公开(公告)日：2010-06-22

申请号：US11781591

申请日：2007-07-23

申请人： Hyun-Soo Shin

发明人： Hyun-Soo Shin

IPC分类号： H01L21/336 ,  H01L29/788

CPC分类号： H01L27/115 ,  H01L27/11521

摘要： A method of manufacturing a flash semiconductor device minimizes a loss of dopant caused by dopant out-diffusion. A trench is formed in a semiconductor substrate. At least one poly gate is formed in the semiconductor substrate including the trench. An RCS (Recess Common Source) region is formed in the trench. Dopant ions are implanted into the RCS region, and an annealing process is applied to the RCS region.

摘要翻译： 制造闪光半导体器件的方法使由掺杂剂扩散引起的掺杂剂的损失最小化。 在半导体衬底中形成沟槽。 在包括沟槽的半导体衬底中形成至少一个多晶硅栅极。 在沟槽中形成RCS（凹入公共源极）区域。 掺杂离子注入到RCS区域中，退火过程被应用于RCS区域。

公开(公告)号：US20090159879A1

公开(公告)日：2009-06-25

申请号：US12318212

申请日：2008-12-23

申请人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo ,  Jong-Han Jeong

发明人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo ,  Jong-Han Jeong

IPC分类号： H01L33/00 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A TFT includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a surface roughness of about 1.3 nm or less, a gate electrode on the transparent semiconductor layer, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.

摘要翻译： TFT包括基板，在基板上的透明半导体层，包含氧化锌的表面粗糙度为1.3nm以下的透明半导体层，透明半导体层上的栅极电极，栅电极之间的栅极绝缘层 并且所述透明半导体层，所述栅极绝缘层将所述栅电极与所述透明半导体层绝缘，以及所述基板上的源极和漏极，所述源极和漏极与所述透明半导体层接触。

公开(公告)号：US08030844B2

公开(公告)日：2011-10-04

申请号：US11407018

申请日：2006-04-19

申请人： Hyun-Soo Shin ,  Jae-Bon Koo ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong

发明人： Hyun-Soo Shin ,  Jae-Bon Koo ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong

IPC分类号： H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56 ,  H01J9/26 ,  H01J9/32

CPC分类号： H01L51/0097 ,  H01L51/5243 ,  H01L51/5246 ,  H01L51/5253 ,  H01L2251/5315 ,  H01L2251/5338 ,  H01L2251/566 ,  Y02E10/549 ,  Y02P70/521

摘要： Provided is a flat panel display which has improved flexibility by using a metal substrate or a conductive substrate, wherein the substrate is protected from external exposure. Also provided is a method of manufacturing the flat panel display. The flat panel display includes a substrate, a first insulator with which one surface of the substrate is covered, a display unit disposed on the other surface of the substrate, and a second insulator with which edges of the substrate are covered to prevent exposure.

摘要翻译： 提供一种平板显示器，其通过使用金属基板或导电基板具有改进的柔性，其中基板被保护免受外部曝光。 还提供了一种制造平板显示器的方法。 平板显示器包括基板，覆盖基板的一个表面的第一绝缘体，设置在基板的另一个表面上的显示单元和覆盖基板的边缘以防止曝光的第二绝缘体。

公开(公告)号：US08016513B2

公开(公告)日：2011-09-13

申请号：US12593761

申请日：2008-01-17

申请人： Hyun-Soo Shin

发明人： Hyun-Soo Shin

IPC分类号： E01F15/00

CPC分类号： E01F15/146

摘要： An apparatus for absorbing the impact of a vehicle collision is disclosed. The apparatus includes a partition moving speed control member (10), which is provided in the frontmost partition, and a guide rod (20), which is inserted into a hole (10a) in the member (10), such that the front end of the guide rod is fastened to rails, and the rear end of the guide rod does not reach the rearmost partition. The apparatus further includes a locking rod (120), which is coupled to the guide rod (20) such that the rear end of the locking rod (120) is placed through the rearmost partition, and a locker, which is provided on the rearmost partition so that, when the vehicle collision occurs, the locking rod freely passes over the locker, but, after the vehicle collision is finished, the locking rod is prevented from being returned to the original position thereof.

摘要翻译： 公开了一种用于吸收车辆碰撞冲击的装置。 该装置包括设置在最前面的隔板中的分隔移动速度控制构件（10）和插入到构件（10）中的孔（10a）中的导向杆（20），使得前端 导杆固定在导轨上，导杆后端未到达最后面的分隔。 该装置还包括锁定杆（120），该锁定杆联接到导杆（20），使得锁定杆（120）的后端通过最后面的分隔件放置，并且储物柜设置在最后面 使得当发生车辆碰撞时，锁定杆自由地通过储物柜，但是在车辆碰撞完成之后，防止锁定杆返回到其初始位置。

公开(公告)号：US07593086B2

公开(公告)日：2009-09-22

申请号：US11523607

申请日：2006-09-20

申请人： Jae-Kyeong Jeong ,  Jae-Bon Koo ,  Hyun-Soo Shin ,  Se-Yeoul Kwon ,  Yeon-Gon Mo

发明人： Jae-Kyeong Jeong ,  Jae-Bon Koo ,  Hyun-Soo Shin ,  Se-Yeoul Kwon ,  Yeon-Gon Mo

IPC分类号： G02F1/1345

CPC分类号： H01L27/3276 ,  H01L2251/5338

摘要： A flexible flat panel display prevents electronic units, such as a flexible printed circuit board and a driving IC, from being separated from the flexible flat panel display even when the display unit is bent. The flexible flat panel display includes: a flexible display unit including a display area adapted to display an image, a first side and a second side parallel to edges of the display area, and a third side and a fourth side perpendicular to the first and second sides, the third side and the fourth being adapted to being bent; and electronic units arranged solely on at least one of the first and second sides and absent the third and fourth sides.

摘要翻译： 即使显示单元弯曲，柔性平板显示器也可防止电子单元，例如柔性印刷电路板和驱动IC与柔性平板显示器分离。 柔性平板显示器包括：柔性显示单元，包括适于显示图像的显示区域，平行于显示区域边缘的第一侧面和第二侧面，以及垂直于第一和第二侧面的第三侧面和第四侧面 侧面，第三面和第四面适于弯曲; 以及仅在第一和第二侧中的至少一个上排列并且不存在第三和第四侧的电子单元。

公开(公告)号：US20080017910A1

公开(公告)日：2008-01-24

申请号：US11781591

申请日：2007-07-23

申请人： Hyun-Soo Shin

发明人： Hyun-Soo Shin

IPC分类号： H01L21/336 ,  H01L29/76

CPC分类号： H01L27/115 ,  H01L27/11521

摘要： A method of manufacturing a flash semiconductor device minimizes a loss of dopant caused by dopant out-diffusion. A trench is formed in a semiconductor substrate. At least one poly gate is formed in the semiconductor substrate including the trench. An RCS (Recess Common Source) region is formed in the trench. Dopant ions are implanted into the RCS region, and an annealing process is applied to the RCS region.

摘要翻译： 制造闪光半导体器件的方法使由掺杂剂扩散引起的掺杂剂的损失最小化。 在半导体衬底中形成沟槽。 在包括沟槽的半导体衬底中形成至少一个多晶硅栅极。 在沟槽中形成RCS（凹入公共源极）区域。 掺杂离子注入到RCS区域中，退火过程被应用于RCS区域。