公开(公告)号：US20160203947A1

公开(公告)日：2016-07-14

申请号：US15023456

申请日：2014-10-07

申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION

发明人： Kenji AOKI ,  Tsutomu SAITOU ,  Kotaro HOSOYA ,  Mitsuhiro NAKAMURA ,  Kunji SHIGETO

IPC分类号： H01J37/29 ,  H01J37/073 ,  H01J37/244

CPC分类号： H01J37/292 ,  H01J37/073 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/18 ,  H01J2237/24465 ,  H01J2237/24475 ,  H01J2237/24495 ,  H01J2237/248 ,  H01J2237/2809

摘要： The objective of the present invention is to provide a charged particle beam device, wherein the positional relationship between reflected electron detection elements and a sample and the vacuum state of the sample surroundings are evaluated to select automatically a reflected electron detection element appropriate for acquiring an intended image. In this charged particle beam device, all the reflected electron detection elements are selected when the degree of vacuum inside the sample chamber is high and the sample is distant from the reflected electron detectors, while a reflected electron detection element appropriate for acquiring a compositional image or a height map image is selected when the degree of vacuum inside the sample chamber is high and the sample is close to the reflected electron detectors. When the degree of vacuum inside the sample chamber is low, all the reflected electron detection elements are selected.

摘要翻译： 本发明的目的是提供一种带电粒子束装置，其中评估反射电子检测元件与样品之间的位置关系和样品周围的真空状态，以自动选择适于获得预期的反射电子检测元件 图片。 在该带电粒子束装置中，当样品室内的真空度高且样品远离反射的电子检测器时，选择所有的反射电子检测元件，而反射的电子检测元件适于获得组成图像或 当样品室内的真空度高且样品接近反射的电子检测器时，选择高度图图像。 当样品室内的真空度低时，选择所有的反射电子检测元件。

公开(公告)号：US20210020422A1

公开(公告)日：2021-01-21

申请号：US16306911

申请日：2016-06-23

申请人： Hitachi High-Technologies Corporation

发明人： Mitsuhiro NAKAMURA ,  Hironori ITABASHI ,  Hirofumi SATOU ,  Tsutomu SAITO ,  Masahiro SASAJIMA ,  Natsuki TSUNO ,  Yohei NAKAMURA

IPC分类号： H01J49/08 ,  H01J37/147 ,  H01J49/10 ,  H01J3/36 ,  H01J3/26

摘要： In order to provide a charged particle beam apparatus capable of stably detecting secondary particles and electromagnetic waves even for a non-conductive sample under high vacuum environment and enabling excellent observation and analysis, the charged particle beam apparatus includes a charged particle gun (12), scanning deflectors (17 and 18) configured to scan a charged particle beam (20) emitted from the charged particle gun (12) onto a sample (21), detectors (40 and 41) configured to detect a scanning control voltage input from an outside into the scanning deflectors, an arithmetic unit (42) configured to calculate, based on the detected scanning control voltage, irradiation pixel coordinates for the charged particle beam; and an irradiation controller (45) configured to control irradiation of the sample with the charged particle beam according to the irradiation pixel coordinates.