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公开(公告)号：US12068128B2
公开(公告)日：2024-08-20
申请号：US17702343
申请日：2022-03-23
Applicant: Hitachi High-Tech Corporation
Inventor： Yusuke Nakamura , Yusuke Abe , Kenji Tanimoto , Takeyoshi Ohashi
IPC: H01J37/28 , H01J37/244 , H01J37/26
CPC classification number: H01J37/28 , H01J37/244 , H01J37/265 , H01J2237/24475 , H01J2237/2448
Abstract: An object of the invention is to acquire a high-quality image while maintaining an improvement in throughput of image acquisition (measurement (length measurement)). The present disclosure provides a charged particle beam system including a charged particle beam device and a computer system configured to control the charged particle beam device. The charged particle beam device includes an objective lens, a sample stage, and a backscattered electron detector that is disposed between the objective lens and the sample stage and that adjusts a focus of a charged particle beam with which a sample is irradiated. The computer system adjusts a value of an electric field on the sample in accordance with a change in a voltage applied to the backscattered electron detector.
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公开(公告)号：US10943762B2
公开(公告)日：2021-03-09
申请号：US16261784
申请日：2019-01-30
Applicant: HITACHI HIGH-TECH CORPORATION
Inventor： Takeyoshi Ohashi , Masami Ikota
Abstract: An inspection system is provided that includes a microscope that scans a sample with a beam that is an incident electron beam, and an image processing device that controls the microscope. The image processing device performs: an acquisition process of acquiring a plurality of images relating to brightness based on an amount of a signal electron detected from the sample a result of controlling the microscope according to a s and irradiating the sample with the beam, the plurality of image acquisition condition being multiple combinations of different irradiation amounts of the beam per unit length; a first generation process of generating a plurality of actually measured profiles that show a relationship between an irradiation position of the beam in the sample and the brightness of the sample, based on the plurality of images acquired in the acquisition process; and an output process of outputting an electrical contact characteristic of the sample based on the plurality of actually measured profiles generated in the first generation process.
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Patent Agency Ranking
公开(公告)号：US11670479B2
公开(公告)日：2023-06-06
申请号：US17338353
申请日：2021-06-03
Applicant: Hitachi High-Tech Corporation
Inventor： Takeyoshi Ohashi , Hyejin Kim , Yusuke Abe , Kenji Tanimoto
CPC classification number: H01J37/21 , G06T1/0007 , G06T7/73 , H01J37/145 , H01J37/222 , G06T2200/24 , G06T2207/10056 , G06T2207/30148
Abstract: When focus adjustment is performed according to the height of the surface of a sample at each inspection point in order to continuously inspect a plurality of inspection points on a wafer by using an electron microscope, even when the focus adjustment by an electrostatic lens in which a variation of heights of inspection points is greater than a predetermined range, and that can perform adjustment at a high speed and adjustment by an electromagnetic lens with a low speed are required to be used together, a flow of focus adjustment in which the number of times of the adjustment by the electromagnetic lens is reduced by using a relation of changes of heights at inspection points, an inspection order, and a range in which an electrostatic focus can be performed is realized, so that inspection with high throughput is made possible.
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公开(公告)号：US20210043420A1
公开(公告)日：2021-02-11
申请号：US16941806
申请日：2020-07-29
Applicant: Hitachi High-Tech Corporation
Inventor： Takeyoshi Ohashi , Yusuke Abe , Kenji Tanimoto , Kaori Bizen , Hyejin Kim
IPC: H01J37/28 , H01J37/244 , H01J37/12
Abstract: A scanning electron microscope includes an electron-optical system including an electron source and an objective lens, a stage on which a sample is placed, a secondary electron detector disposed adjacent to the electron source relative to the objective lens and configured to detect secondary electrons, a backscattered electron detector disposed between the objective lens and the stage and configured to detect backscattered electrons, a backscattered electron detection system controller configured to apply a voltage to the backscattered electron detector, and a device-control computer configured to detect a state of an electrical charge carried by the backscattered electron detector based on signal intensity at the secondary electron detector when the primary electrons are applied to the sample with a predetermined voltage applied to the backscattered electron detector.
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公开(公告)号：US11430106B2
公开(公告)日：2022-08-30
申请号：US16638033
申请日：2017-08-23
Applicant: HITACHI HIGH-TECH CORPORATION
Inventor： Takeyoshi Ohashi , Atsuko Shintani , Masami Ikota , Kazuhisa Hasumi
Abstract: An object of the invention is to quantitatively evaluate crystal growth amount in a wide range from an undergrowth state to an overgrowth state with nondestructive inspection. By using a plenty of image feature values such as pattern brightness, a pattern area and a pattern shape which are extracted from an SEM image, and depending on whether brightness inside a pattern is lower than brightness outside the pattern (401), undergrowth and overgrowth is determined (402, 405). Based on a brightness difference or the pattern area, a growth amount index or a normality index of crystal growth in a concave pattern such as a hole pattern or a trench pattern is calculated (404, 407).
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公开(公告)号：US11276554B2
公开(公告)日：2022-03-15
申请号：US16941806
申请日：2020-07-29
Applicant: Hitachi High-Tech Corporation
Inventor： Takeyoshi Ohashi , Yusuke Abe , Kenji Tanimoto , Kaori Bizen , Hyejin Kim
IPC: H01J37/28 , H01J37/244 , H01J37/12
Abstract: A scanning electron microscope includes an electron-optical system including an electron source and an objective lens, a stage on which a sample is placed, a secondary electron detector disposed adjacent to the electron source relative to the objective lens and configured to detect secondary electrons, a backscattered electron detector disposed between the objective lens and the stage and configured to detect backscattered electrons, a backscattered electron detection system controller configured to apply a voltage to the backscattered electron detector, and a device-control computer configured to detect a state of an electrical charge carried by the backscattered electron detector based on signal intensity at the secondary electron detector when the primary electrons are applied to the sample with a predetermined voltage applied to the backscattered electron detector.
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公开(公告)号：US20210384006A1
公开(公告)日：2021-12-09
申请号：US17338353
申请日：2021-06-03
Applicant: Hitachi High-Tech Corporation
Inventor： Takeyoshi Ohashi , Hyejin Kim , Yusuke Abe , Kenji Tanimoto
IPC: H01J37/21 , G06T1/00 , G06T7/73 , H01J37/22 , H01J37/145
Abstract: When focus adjustment is performed according to the height of the surface of a sample at each inspection point in order to continuously inspect a plurality of inspection points on a wafer by using an electron microscope, even when the focus adjustment by an electrostatic lens in which a variation of heights of inspection points is greater than a predetermined range, and that can perform adjustment at a high speed and adjustment by an electromagnetic lens with a low speed are required to be used together, a flow of focus adjustment in which the number of times of the adjustment by the electromagnetic lens is reduced by using a relation of changes of heights at inspection points, an inspection order, and a range in which an electrostatic focus can be performed is realized, so that inspection with high throughput is made possible.
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