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    Image displaying apparatus for displaying an image according to light reflected by an optical spatial modulator element
    2.
    发明授权
    Image displaying apparatus for displaying an image according to light reflected by an optical spatial modulator element 失效
    用于根据由光学空间调制器元件反射的光显示图像的图像显示装置

    公开(公告)号：US06698902B2

    公开(公告)日：2004-03-02

    申请号：US10267031

    申请日：2002-10-09

    申请人： Hiroyuki Kawano ,  Junichi Nishimae ,  Tatsuki Okamoto ,  Yukio Satou ,  Atsuhiro Sono

    发明人： Hiroyuki Kawano ,  Junichi Nishimae ,  Tatsuki Okamoto ,  Yukio Satou ,  Atsuhiro Sono

    IPC分类号： G03B2114

    CPC分类号： G02B5/04 ,  G02B26/0841 ,  H04N5/7458

    摘要： A digital mirror dence chip has a substrate, micro-mirrors disposed on the substrate, and a glass cover plate disposed over the micro-mirrors. Each micro-mirror is inclined by +10 degrees or −10 degrees with respect to the substrate to be set to an on-state or an off-state. Incident light produced in a lighting source system is totally reflected in a total internal reflection prism and is incident on the micro-mirrors through the glass cover plate. Outgoing light reflected by micro-minors in the on-state passes through a projection lens and is projected onto a screen to form an image on the screen. Also, outgoing light reflected by micro-mirrors in the off-state passes out of the projection lens. The glass cover plate is not parallel to the substrate. Therefore, light specularly reflected by a surface of the glass cover plate passes out of the projection lens.

    摘要翻译： 数字反射镜芯片具有基板，设置在基板上的微反射镜和设置在微反射镜上的玻璃盖板。 每个微镜相对于衬底倾斜±10度或-10度，以被设置为导通状态或截止状态。 在光源系统中产生的入射光全反射在全内反射棱镜中，并通过玻璃盖板入射到微镜上。 在导通状态下由微型未成年人反射的出射光通过投影透镜并投影到屏幕上以在屏幕上形成图像。 此外，在关闭状态下由微反射镜反射的出射光通过投影透镜。 玻璃盖板不平行于基板。 因此，由玻璃盖板的表面镜面反射的光从投影透镜出来。

    METHOD OF MANUFACTURING SEMICONDUCTOR THIN FILM AND SEMICONDUCTOR DEVICE
    6.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR THIN FILM AND SEMICONDUCTOR DEVICE 有权
    制造半导体薄膜和半导体器件的方法

    公开(公告)号：US20100112790A1

    公开(公告)日：2010-05-06

    申请号：US12596453

    申请日：2007-12-05

    申请人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

    发明人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

    IPC分类号： H01L21/20 ,  H01L21/268

    CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/0657

    摘要： On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.

    摘要翻译： 在半透明基板上，依次沉积具有折射率n的绝缘膜和非晶硅膜。 通过从具有波长λ方向的波长形状的波束形状的激光束照射非晶硅膜，从非晶硅膜的与绝缘膜相对的侧面多次， 激光束在带状的宽度方向上多次移动距离小于带状的宽度尺寸的距离，由非晶硅膜形成多晶硅膜。 形成多晶硅膜形成在宽度方向上延伸的晶粒边界，并且以沿长度方向测量的平均间隔设置，范围为（λ/ n）×0.95〜（λ/ n）×1.05， 在彼此相邻并且在宽度方向上延伸的晶粒边界之间的区域中，在长度方向上延伸并沿宽度方向测量的平均间隔设置在（λ/ n）×0.95〜（ λ/ n）×1.05（含）。

    Method of manufacturing semiconductor thin film
    7.
    发明授权
    Method of manufacturing semiconductor thin film 有权
    制造半导体薄膜的方法

    公开(公告)号：US08080450B2

    公开(公告)日：2011-12-20

    申请号：US12596453

    申请日：2007-12-05

    申请人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

    发明人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

    IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L21/205

    CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/0657

    摘要： On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.

    摘要翻译： 在半透明基板上，依次沉积具有折射率n的绝缘膜和非晶硅膜。 通过从具有波长λ方向的波长形状的波束形状的激光束照射非晶硅膜，从非晶硅膜的与绝缘膜相对的侧面多次， 激光束在带状的宽度方向上多次移动距离小于带状的宽度尺寸的距离，由非晶硅膜形成多晶硅膜。 形成多晶硅膜形成在宽度方向上延伸的晶粒边界，并且以沿长度方向测量的平均间隔设置，范围为（λ/ n）×0.95〜（λ/ n）×1.05， 在彼此相邻并且在宽度方向上延伸的晶粒边界之间的区域中，在长度方向上延伸并沿宽度方向测量的平均间隔设置在（λ/ n）×0.95〜（ λ/ n）×1.05（含）。

    Method for producing a semiconductor device including crystallizing an amphorous semiconductor film
    8.
    发明授权
    Method for producing a semiconductor device including crystallizing an amphorous semiconductor film 失效
    一种半导体器件的制造方法，包括使两相半导体膜结晶化

    公开(公告)号：US07553778B2

    公开(公告)日：2009-06-30

    申请号：US11356288

    申请日：2006-02-17

    申请人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Atsuhiro Sono ,  Shinsuke Yura ,  Kazushi Yamayoshi

    发明人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Atsuhiro Sono ,  Shinsuke Yura ,  Kazushi Yamayoshi

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02686 ,  H01L21/02422 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296

    摘要： A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm.

    摘要翻译： 一种制造半导体器件的方法包括：在具有矩形照射区域的脉冲激光束的绝缘材料上照射非晶半导体膜，同时沿与照射区域的纵向相交的方向扫描，从而形成第一多晶半导体膜， 以及在与所述照射区域交叉的纵向方向上扫描所述非晶半导体膜的一部分，所述半导体膜与所述第一多晶半导体膜重叠，并且与所述第一多晶半导体膜相邻，从而形成第二多晶半导体膜 。 激光束的波长为390nm〜640nm，非晶半导体膜的厚度为60nm〜100nm。

    Semiconductor device and method for producing the same
    9.
    发明申请
    Semiconductor device and method for producing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US20060183304A1

    公开(公告)日：2006-08-17

    申请号：US11356288

    申请日：2006-02-17

    申请人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Atsuhiro Sono ,  Shinsuke Yura ,  Kazushi Yamayoshi

    发明人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Atsuhiro Sono ,  Shinsuke Yura ,  Kazushi Yamayoshi

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： H01L21/02686 ,  H01L21/02422 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296

    摘要： A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm.

    摘要翻译： 一种制造半导体器件的方法包括：在具有矩形照射区域的脉冲激光束的绝缘材料上照射非晶半导体膜，同时沿与照射区域的纵向相交的方向扫描，从而形成第一多晶半导体膜， 以及在与所述照射区域交叉的纵向方向上扫描所述非晶半导体膜的一部分，所述半导体膜与所述第一多晶半导体膜重叠，并且与所述第一多晶半导体膜相邻，从而形成第二多晶半导体膜 。 激光束的波长为390nm〜640nm，非晶半导体膜的厚度为60nm〜100nm。