摘要:
On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.
摘要:
On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.
摘要:
A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm.
摘要:
A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm.
摘要:
A method of crystallizing an amorphous semiconductor film, the method comprising the steps of: forming a gate electrode on a transparent insulating substrate; forming a gate insulating film on the transparent insulating substrate and on an upper part of the gate electrode; forming an amorphous semiconductor film on the gate insulating film; forming a light-transmissive insulating film on the amorphous semiconductor film; forming a metal film having an opening on the light-transmissive insulating film; irradiating laser light onto both a region of the light-transmissive insulating film exposed by the opening and the metal film, which is used as a mask for shielding the laser light; and performing laser annealing to make the laser light to be absorbed through the light-transmissive insulating film into a region of the amorphous semiconductor film exposed by the opening, so that the amorphous semiconductor film is heated and converted to a crystalline semiconductor film.
摘要:
In a thin film transistor using a polycrystalline semiconductor film, when a storage capacitor is formed, it is often that a polycrystalline semiconductor film is used also in one electrode of the capacity. In a display device having a storage capacitor and thin film transistor which have a polycrystalline semiconductor film, the storage capacitor exhibits a voltage dependency due to the semiconductor film, and hence a display failure is caused. In the display device of the invention, a metal conductive film 5 is stacked above a semiconductor layer 4d made of a polycrystalline semiconductor film which is used as a lower electrode of a storage capacitor 130.
摘要:
A thin film transistor includes a polysilicon layer formed over a substrate having a channel region, a source region and a drain region, a conductive layer formed in an upper layer of the polysilicon layer for covering at least a part of the source region and the drain region, an interlayer insulating film formed in a region to cover at least a region including the polysilicon layer, a contact hole formed to penetrate the interlayer insulating film with a depth to expose the conductive layer and a wiring layer formed along a sidewall of the contact hole.
摘要:
In a thin film transistor using a polycrystalline semiconductor film, when a storage capacitor is formed, it is often that a polycrystalline semiconductor film is used also in one electrode of the capacity. In a display device having a storage capacitor and thin film transistor which have a polycrystalline semiconductor film, the storage capacitor exhibits a voltage dependency due to the semiconductor film, and hence a display failure is caused. In the display device of the invention, a metal conductive film 5 is stacked above a semiconductor layer 4d made of a polycrystalline semiconductor film which is used as a lower electrode of a storage capacitor 130.
摘要:
An organic electro luminescence element includes a substrate, an anode isolating film formed of an insulator on the substrate, an anode conductive layer formed on an upper surface of the substrate in an area partitioned by the anode isolating film, and an element isolating film formed of an insulator to enclose the anode isolating film and to be wider downward. Further, on the upper surface of the anode isolating film, a conductive film of the same type as the anode conductive layer is formed, which conductive layer is also covered by the element isolating film. Preferably, the anode isolating film has its upper surface made larger than the lower surface.
摘要:
An active matrix substrate includes a plurality of pairs of a TFT including a gate electrode and a gate insulating film formed on an insulating substrate, a channel layer made of at least one of a crystalline semiconductor film and an amorphous semiconductor film, and a source electrode and a drain electrode, and a pixel electrode arranged in an array. The channel layer is formed within a formation area of the gate electrode, the source electrode and the drain electrode are formed within a formation area of the channel layer, a source line is formed above the gate insulating film in a position spaced from the gate electrode, and the source line is connected to the source electrode through a connection line made of an oxide conductive film formed on top of the source electrode and extending from the top of the source electrode.