公开(公告)号：US20100112790A1

公开(公告)日：2010-05-06

申请号：US12596453

申请日：2007-12-05

申请人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

发明人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

IPC分类号： H01L21/20 ,  H01L21/268

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/0657

摘要： On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.

摘要翻译： 在半透明基板上，依次沉积具有折射率n的绝缘膜和非晶硅膜。 通过从具有波长λ方向的波长形状的波束形状的激光束照射非晶硅膜，从非晶硅膜的与绝缘膜相对的侧面多次， 激光束在带状的宽度方向上多次移动距离小于带状的宽度尺寸的距离，由非晶硅膜形成多晶硅膜。 形成多晶硅膜形成在宽度方向上延伸的晶粒边界，并且以沿长度方向测量的平均间隔设置，范围为（λ/ n）×0.95〜（λ/ n）×1.05， 在彼此相邻并且在宽度方向上延伸的晶粒边界之间的区域中，在长度方向上延伸并沿宽度方向测量的平均间隔设置在（λ/ n）×0.95〜（ λ/ n）×1.05（含）。

公开(公告)号：US08080450B2

公开(公告)日：2011-12-20

申请号：US12596453

申请日：2007-12-05

申请人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

发明人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L21/205

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/0657

摘要： On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.

摘要翻译： 在半透明基板上，依次沉积具有折射率n的绝缘膜和非晶硅膜。 通过从具有波长λ方向的波长形状的波束形状的激光束照射非晶硅膜，从非晶硅膜的与绝缘膜相对的侧面多次， 激光束在带状的宽度方向上多次移动距离小于带状的宽度尺寸的距离，由非晶硅膜形成多晶硅膜。 形成多晶硅膜形成在宽度方向上延伸的晶粒边界，并且以沿长度方向测量的平均间隔设置，范围为（λ/ n）×0.95〜（λ/ n）×1.05， 在彼此相邻并且在宽度方向上延伸的晶粒边界之间的区域中，在长度方向上延伸并沿宽度方向测量的平均间隔设置在（λ/ n）×0.95〜（ λ/ n）×1.05（含）。

公开(公告)号：US07553778B2

公开(公告)日：2009-06-30

申请号：US11356288

申请日：2006-02-17

申请人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Atsuhiro Sono ,  Shinsuke Yura ,  Kazushi Yamayoshi

发明人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Atsuhiro Sono ,  Shinsuke Yura ,  Kazushi Yamayoshi

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  H01L21/02422 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296

摘要： A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm.

摘要翻译： 一种制造半导体器件的方法包括：在具有矩形照射区域的脉冲激光束的绝缘材料上照射非晶半导体膜，同时沿与照射区域的纵向相交的方向扫描，从而形成第一多晶半导体膜， 以及在与所述照射区域交叉的纵向方向上扫描所述非晶半导体膜的一部分，所述半导体膜与所述第一多晶半导体膜重叠，并且与所述第一多晶半导体膜相邻，从而形成第二多晶半导体膜 。 激光束的波长为390nm〜640nm，非晶半导体膜的厚度为60nm〜100nm。

公开(公告)号：US20060183304A1

公开(公告)日：2006-08-17

申请号：US11356288

申请日：2006-02-17

申请人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Atsuhiro Sono ,  Shinsuke Yura ,  Kazushi Yamayoshi

发明人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Atsuhiro Sono ,  Shinsuke Yura ,  Kazushi Yamayoshi

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02686 ,  H01L21/02422 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296

摘要： A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm.

摘要翻译： 一种制造半导体器件的方法包括：在具有矩形照射区域的脉冲激光束的绝缘材料上照射非晶半导体膜，同时沿与照射区域的纵向相交的方向扫描，从而形成第一多晶半导体膜， 以及在与所述照射区域交叉的纵向方向上扫描所述非晶半导体膜的一部分，所述半导体膜与所述第一多晶半导体膜重叠，并且与所述第一多晶半导体膜相邻，从而形成第二多晶半导体膜 。 激光束的波长为390nm〜640nm，非晶半导体膜的厚度为60nm〜100nm。

公开(公告)号：US08384086B2

公开(公告)日：2013-02-26

申请号：US12888779

申请日：2010-09-23

申请人： Kazushi Yamayoshi ,  Toru Takeguchi ,  Kazutoshi Aoki

发明人： Kazushi Yamayoshi ,  Toru Takeguchi ,  Kazutoshi Aoki

IPC分类号： H01L27/108

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L29/04 ,  H01L29/66765

摘要： A method of crystallizing an amorphous semiconductor film, the method comprising the steps of: forming a gate electrode on a transparent insulating substrate; forming a gate insulating film on the transparent insulating substrate and on an upper part of the gate electrode; forming an amorphous semiconductor film on the gate insulating film; forming a light-transmissive insulating film on the amorphous semiconductor film; forming a metal film having an opening on the light-transmissive insulating film; irradiating laser light onto both a region of the light-transmissive insulating film exposed by the opening and the metal film, which is used as a mask for shielding the laser light; and performing laser annealing to make the laser light to be absorbed through the light-transmissive insulating film into a region of the amorphous semiconductor film exposed by the opening, so that the amorphous semiconductor film is heated and converted to a crystalline semiconductor film.

摘要翻译： 一种使非晶半导体膜结晶的方法，所述方法包括以下步骤：在透明绝缘基板上形成栅电极; 在透明绝缘基板上和栅电极的上部形成栅极绝缘膜; 在栅极绝缘膜上形成非晶半导体膜; 在所述非晶半导体膜上形成透光绝缘膜; 在所述透光绝缘膜上形成具有开口的金属膜; 将激光照射到由开口曝光的透光绝缘膜的区域和用作屏蔽激光的掩模的金属膜; 并且进行激光退火以使激光通过透光绝缘膜吸收到由开口暴露的非晶半导体膜的区域中，使得非晶半导体膜被加热并转换成结晶半导体膜。

公开(公告)号：US20080135909A1

公开(公告)日：2008-06-12

申请号：US11948377

申请日：2007-11-30

申请人： Toru Takeguchi ,  Takuji Imamura ,  Kazushi Yamayoshi ,  Tomoyuki Irizumi ,  Atsunori Nishiura ,  Kaoru Motonami

发明人： Toru Takeguchi ,  Takuji Imamura ,  Kazushi Yamayoshi ,  Tomoyuki Irizumi ,  Atsunori Nishiura ,  Kaoru Motonami

IPC分类号： H01L27/108 ,  H01L21/02

CPC分类号： H01L28/60 ,  G02F1/136213 ,  G02F1/136227 ,  H01L27/1255 ,  H01L27/1288

摘要： In a thin film transistor using a polycrystalline semiconductor film, when a storage capacitor is formed, it is often that a polycrystalline semiconductor film is used also in one electrode of the capacity. In a display device having a storage capacitor and thin film transistor which have a polycrystalline semiconductor film, the storage capacitor exhibits a voltage dependency due to the semiconductor film, and hence a display failure is caused. In the display device of the invention, a metal conductive film 5 is stacked above a semiconductor layer 4d made of a polycrystalline semiconductor film which is used as a lower electrode of a storage capacitor 130.

摘要翻译： 在使用多晶半导体膜的薄膜晶体管中，当形成存储电容时，通常多晶半导体膜也用于一个容量的电极中。 在具有具有多晶半导体膜的存储电容器和薄膜晶体管的显示装置中，存储电容器由于半导体膜而呈现电压依赖性，因此导致显示不良。 在本发明的显示装置中，金属导电膜5层叠在用作保持电容器130的下电极的多晶半导体膜的半导体层4d的上方。

公开(公告)号：US20080135849A1

公开(公告)日：2008-06-12

申请号：US11946309

申请日：2007-11-28

申请人： Kazushi Yamayoshi

发明人： Kazushi Yamayoshi

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66757 ,  H01L29/41733 ,  H01L29/458

摘要： A thin film transistor includes a polysilicon layer formed over a substrate having a channel region, a source region and a drain region, a conductive layer formed in an upper layer of the polysilicon layer for covering at least a part of the source region and the drain region, an interlayer insulating film formed in a region to cover at least a region including the polysilicon layer, a contact hole formed to penetrate the interlayer insulating film with a depth to expose the conductive layer and a wiring layer formed along a sidewall of the contact hole.

摘要翻译： 薄膜晶体管包括在具有沟道区，源极区和漏极区的衬底上形成的多晶硅层，形成在多晶硅层的上层中的导电层，用于覆盖源极区和漏极的至少一部分 区域，形成在覆盖至少包括多晶硅层的区域的区域中的层间绝缘膜，形成为穿透层间绝缘膜的接触孔，具有暴露导电层的深度和沿着接触的侧壁形成的布线层 孔。

公开(公告)号：US07754541B2

公开(公告)日：2010-07-13

申请号：US11948377

申请日：2007-11-30

申请人： Toru Takeguchi ,  Takuji Imamura ,  Kazushi Yamayoshi ,  Tomoyuki Irizumi ,  Atsunori Nishiura ,  Kaoru Motonami

发明人： Toru Takeguchi ,  Takuji Imamura ,  Kazushi Yamayoshi ,  Tomoyuki Irizumi ,  Atsunori Nishiura ,  Kaoru Motonami

IPC分类号： H01L21/00

CPC分类号： H01L28/60 ,  G02F1/136213 ,  G02F1/136227 ,  H01L27/1255 ,  H01L27/1288

摘要： In a thin film transistor using a polycrystalline semiconductor film, when a storage capacitor is formed, it is often that a polycrystalline semiconductor film is used also in one electrode of the capacity. In a display device having a storage capacitor and thin film transistor which have a polycrystalline semiconductor film, the storage capacitor exhibits a voltage dependency due to the semiconductor film, and hence a display failure is caused. In the display device of the invention, a metal conductive film 5 is stacked above a semiconductor layer 4d made of a polycrystalline semiconductor film which is used as a lower electrode of a storage capacitor 130.

摘要翻译： 在使用多晶半导体膜的薄膜晶体管中，当形成存储电容时，通常多晶半导体膜也用于一个容量的电极中。 在具有具有多晶半导体膜的存储电容器和薄膜晶体管的显示装置中，存储电容器由于半导体膜而呈现电压依赖性，因此导致显示不良。 在本发明的显示装置中，金属导电膜5堆叠在用作存储电容器130的下电极的多晶半导体膜制成的半导体层4d的上方。

公开(公告)号：US07091659B2

公开(公告)日：2006-08-15

申请号：US10832452

申请日：2004-04-27

申请人： Hiroyuki Fuchigami ,  Kazushi Yamayoshi ,  Tomoyuki Irizumi ,  Koji Oda

发明人： Hiroyuki Fuchigami ,  Kazushi Yamayoshi ,  Tomoyuki Irizumi ,  Koji Oda

IPC分类号： H05B33/26

CPC分类号： H01L27/3246 ,  H01L27/3283 ,  H01L51/0021 ,  H01L51/5218 ,  H01L2251/5315

摘要： An organic electro luminescence element includes a substrate, an anode isolating film formed of an insulator on the substrate, an anode conductive layer formed on an upper surface of the substrate in an area partitioned by the anode isolating film, and an element isolating film formed of an insulator to enclose the anode isolating film and to be wider downward. Further, on the upper surface of the anode isolating film, a conductive film of the same type as the anode conductive layer is formed, which conductive layer is also covered by the element isolating film. Preferably, the anode isolating film has its upper surface made larger than the lower surface.

摘要翻译： 有机电致发光元件包括基板，由基板上的绝缘体形成的阳极隔离膜，在由阳极隔离膜分隔的区域中形成在基板的上表面上的阳极导电层，以及由阳极隔离膜形成的元件隔离膜， 绝缘体，以封闭阳极隔离膜并向下较宽。 此外，在阳极隔离膜的上表面上，形成与阳极导电层相同类型的导电膜，该导电层也被元件隔离膜覆盖。 优选地，阳极隔离膜的上表面大于下表面。

公开(公告)号：US08310613B2

公开(公告)日：2012-11-13

申请号：US12987347

申请日：2011-01-10

申请人： Kazushi Yamayoshi

发明人： Kazushi Yamayoshi

IPC分类号： G02F1/136

CPC分类号： H01L29/78633 ,  G09G3/3648 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0443 ,  G09G2320/0214 ,  H01L27/12 ,  H01L27/124 ,  H01L29/78678

摘要： An active matrix substrate includes a plurality of pairs of a TFT including a gate electrode and a gate insulating film formed on an insulating substrate, a channel layer made of at least one of a crystalline semiconductor film and an amorphous semiconductor film, and a source electrode and a drain electrode, and a pixel electrode arranged in an array. The channel layer is formed within a formation area of the gate electrode, the source electrode and the drain electrode are formed within a formation area of the channel layer, a source line is formed above the gate insulating film in a position spaced from the gate electrode, and the source line is connected to the source electrode through a connection line made of an oxide conductive film formed on top of the source electrode and extending from the top of the source electrode.

摘要翻译： 有源矩阵基板包括多个TFT，其包括形成在绝缘基板上的栅电极和栅绝缘膜，由晶体半导体膜和非晶半导体膜中的至少一个制成的沟道层，以及源电极 漏电极和排列成阵列的像素电极。 沟道层形成在栅电极的形成区域内，源电极和漏电极形成在沟道层的形成区域内，源极线形成在栅极绝缘膜上方与栅电极间隔开的位置 并且源极线通过由形成在源电极的顶部并从源电极的顶部延伸的由氧化物导电膜形成的连接线连接到源电极。