公开(公告)号：US06605839B2

公开(公告)日：2003-08-12

申请号：US10303726

申请日：2002-11-26

申请人： Hirotomo Miura ,  Yasuo Sato

发明人： Hirotomo Miura ,  Yasuo Sato

IPC分类号： H01L2976

CPC分类号： H01L27/11568 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/5657 ,  G11C11/5671 ,  G11C16/0466 ,  H01L27/115 ,  H01L29/7923

摘要： A nonvolatile semiconductor memory device having nonvolatile memory cells, each of said memory cells including a semiconductor substrate of one type of electric conduction, a pair of source and drain regions of the opposite type of electric conduction formed in the semiconductor substrate, an electric charge-capturing film formed on a channel region between the pair of source and drain regions, and a gate electrode formed on the charge-capturing film and working as a control electrode. The electric charge-capturing film has a multi-layer structure in which at least four insulating films and at least three dielectric films each working as an electric charge accumulation layer are alternatingly laminated one upon the other, the lowermost insulating film among the at least four insulating films is formed as a gate-insulating film, a plurality of different threshold voltages are set to the at least three dielectric films to correspond to their electric charge-capturing states, and at least four kinds of memory states are specified depending upon the plurality of threshold voltages. This constitution makes it possible to easily and reliably adjust the amount of electric charge to be captured and, hence, to store desired multi-value data while preventing the occurrence of an inconvenience such as data corruption.

公开(公告)号：US06469343B1

公开(公告)日：2002-10-22

申请号：US09679650

申请日：2000-10-05

申请人： Hirotomo Miura ,  Yasuo Sato

发明人： Hirotomo Miura ,  Yasuo Sato

IPC分类号： H01L29792

CPC分类号： H01L27/11568 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/5657 ,  G11C11/5671 ,  G11C16/0466 ,  H01L27/115 ,  H01L29/7923

摘要： A nonvolatile semiconductor memory device having nonvolatile memory cells, each of said memory cells including a semiconductor substrate of one type of electric conduction, a pair of source and drain regions of the opposite type of electric conduction formed in the semiconductor substrate, an electric charge-capturing film formed on a channel region between the pair of source and drain regions, and a gate electrode formed on the charge-capturing film and working as a control electrode. The electric charge-capturing film has a multi-layer structure in which at least four insulating films and at least three dielectric films each working as an electric charge accumulation layer are alternatingly laminated one upon the other, the lowermost insulating film among the at least four insulating films is formed as a gate-insulating film, a plurality of different threshold voltages are set to the at least three dielectric films to correspond to their electric charge-capturing states, and at least four kinds of memory states are specified depending upon the plurality of threshold voltages. This constitution makes it possible to easily and reliably adjust the amount of electric charge to be captured and, hence, to store desired multi-value data while preventing the occurrence of an inconvenience such as data corruption.

摘要翻译： 一种具有非易失性存储单元的非易失性半导体存储器件，每个所述存储单元包括一种类型的导电的半导体衬底，形成在所述半导体衬底中的相对电导体的一对源区和漏区， 在一对源区和漏区之间的沟道区上形成的捕获膜，以及形成在电荷捕获膜上并用作控制电极的栅电极。 电荷捕获膜具有多层结构，其中至少四个绝缘膜和每个用作电荷蓄积层的至少三个电介质膜彼此交替层叠，所述至少四个绝缘膜 形成绝缘膜作为栅极绝缘膜，对至少三个电介质膜设置多个不同的阈值电压以对应于其电荷捕获状态，并且根据多个不同的阈值电压指定至少四种存储状态 的阈值电压。 这种结构使得可以容易且可靠地调整要捕获的电荷量，并因此存储期望的多值数据，同时防止诸如数据损坏的不便的发生。

公开(公告)号：US06596590B1

公开(公告)日：2003-07-22

申请号：US09679649

申请日：2000-10-05

申请人： Hirotomo Miura ,  Yasuo Sato

发明人： Hirotomo Miura ,  Yasuo Sato

IPC分类号： H01L218247

CPC分类号： G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/5657 ,  G11C11/5671 ,  G11C16/0466 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/7923

摘要： A nonvolatile semiconductor memory device having nonvolatile memory cells, each of said memory cells including a semiconductor substrate of one type of electric conduction, a pair of source and drain regions of the opposite type of electric conduction formed in the semiconductor substrate, an electric charge-capturing film formed on a channel region between the pair of source and drain regions, and a gate electrode formed on the charge-capturing film and working as a control electrode. The electric charge-capturing film has a multi-layer structure in which at least four insulating films and at least three dielectric films each working as an electric charge accumulation layer are alternatingly laminated one upon the other, the lowermost insulating film among the at least four insulating films is formed as a gate-insulating film, a plurality of different threshold voltages are set to the at least three dielectric films to correspond to their electric charge-capturing states, and at least four kinds of memory states are specified depending upon the plurality of threshold voltages. This constitution makes it possible to easily and reliably adjust the amount of electric charge to be captured and, hence, to store desired multi-value data while preventing the occurrence of an inconvenience such as data corruption.

摘要翻译： 一种具有非易失性存储单元的非易失性半导体存储器件，每个所述存储单元包括一种类型的导电的半导体衬底，形成在所述半导体衬底中的相对电导体的一对源区和漏区， 在一对源区和漏区之间的沟道区上形成的捕获膜，以及形成在电荷捕获膜上并用作控制电极的栅电极。 电荷捕获膜具有多层结构，其中至少四个绝缘膜和每个用作电荷蓄积层的至少三个电介质膜彼此交替层叠，所述至少四个绝缘膜 形成绝缘膜作为栅极绝缘膜，对至少三个电介质膜设置多个不同的阈值电压以对应于其电荷捕获状态，并且根据多个不同的阈值电压指定至少四种存储状态 的阈值电压。 这种结构使得可以容易且可靠地调整要捕获的电荷量，并因此存储期望的多值数据，同时防止诸如数据损坏的不便的发生。

公开(公告)号：US06649542B2

公开(公告)日：2003-11-18

申请号：US10146949

申请日：2002-05-17

申请人： Hirotomo Miura ,  Yasuo Sato

发明人： Hirotomo Miura ,  Yasuo Sato

IPC分类号： H01L21469

CPC分类号： H01L27/11568 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/5657 ,  G11C11/5671 ,  G11C16/0466 ,  H01L27/115 ,  H01L29/7923

摘要： A method of writing data into a memory cell of a non-volatile semiconductor memory device includes setting a write voltage applied to portions of the memory cells depending upon a value of write data, and applying, to a gate electrode, a voltage by which an electric charge is allowed to tunnel through an insulating film on a lower side of a dialectric film that captures the electric charge corresponding to a data value. The amount of electric charge captured is easily and reliably adjusted in order to store desired multi-value digital data, while preventing occurrence of data corruption.

摘要翻译： 将数据写入到非易失性半导体存储器件的存储单元中的方法包括根据写入数据的值来设置施加到存储器单元的部分的写入电压，以及向栅极施加电压， 允许电荷通过捕获对应于数据值的电荷的方位膜的下侧的绝缘膜隧穿。 捕获的电荷量容易且可靠地调整以便存储所需的多值数字数据，同时防止数据损坏的发生。

公开(公告)号：US06285596B1

公开(公告)日：2001-09-04

申请号：US09679651

申请日：2000-10-05

申请人： Hirotomo Miura ,  Yasuo Sato

发明人： Hirotomo Miura ,  Yasuo Sato

IPC分类号： G11C1604

CPC分类号： G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/5657 ,  G11C11/5671 ,  G11C16/0466 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/7923

摘要： A nonvolatile semiconductor memory device having nonvolatile memory cells, each of said memory cells including a semiconductor substrate of one type of electric conduction, a pair of source and drain regions of the opposite type of electric conduction formed in the semiconductor substrate, an electric charge-capturing film formed on a channel region between the pair of source and drain regions, and a gate electrode formed on the charge-capturing film and working as a control electrode. The electric charge-capturing film has a multi-layer structure in which at least four insulating films and at least three dielectric films each working as an electric charge accumulation layer are alternatingly laminated one upon the other, the lowermost insulating film among the at least four insulating films is formed as a gate-insulating film, a plurality of different threshold voltages are set to the at least three dielectric films to correspond to their electric charge-capturing states, and at least four kinds of memory states are specified depending upon the plurality of threshold voltages. This constitution makes it possible to easily and reliably adjust the amount of electric charge to be captured and, hence, to store desired multi-value data while preventing the occurrence of an inconvenience such as data corruption.

摘要翻译： 一种具有非易失性存储单元的非易失性半导体存储器件，每个所述存储单元包括一种类型的导电的半导体衬底，形成在所述半导体衬底中的相对电导体的一对源区和漏区， 在一对源区和漏区之间的沟道区上形成的捕获膜，以及形成在电荷捕获膜上并用作控制电极的栅电极。 电荷捕获膜具有多层结构，其中至少四个绝缘膜和每个用作电荷蓄积层的至少三个电介质膜彼此交替层叠，所述至少四个绝缘膜 形成绝缘膜作为栅极绝缘膜，对至少三个电介质膜设置多个不同的阈值电压以对应于其电荷捕获状态，并且根据多个不同的阈值电压指定至少四种存储状态 的阈值电压。 这种结构使得可以容易且可靠地调整要捕获的电荷量，并因此存储期望的多值数据，同时防止诸如数据损坏的不便的发生。

公开(公告)号：US20110282505A1

公开(公告)日：2011-11-17

申请号：US13061202

申请日：2010-01-08

申请人： Yasushi Tomita ,  Yasuo Sato ,  Masahiro Watanabe ,  Rena Tachihara ,  Yuichi Otake ,  Tatsuya Yamada

发明人： Yasushi Tomita ,  Yasuo Sato ,  Masahiro Watanabe ,  Rena Tachihara ,  Yuichi Otake ,  Tatsuya Yamada

IPC分类号： G06F1/32

CPC分类号： H02J3/14 ,  H02J13/0079 ,  H02J2003/143 ,  H02J2003/146 ,  Y02B70/3225 ,  Y02B70/3266 ,  Y04S20/222 ,  Y04S20/224 ,  Y04S20/242

摘要： A power demand/supply management server (10) obtains information defining restraint contents to a comfort and an electricity bill from a consumer power operating device (2). An individual-consumer control optimizing unit of the power demand/supply management server (10) calculates control contents to an electrical equipment having a minimum cost evaluation value based on a simulation result of cost evaluation values which are barometers for evaluating a comfort and an electricity bill excessiveness, and transmits the calculated control contents to the consumer power operating device (2). Also, a whole-consumer optimizing unit of the power demand/supply management server (10) calculates the most appropriate electricity unit meter-charge that ensures a necessary demand suppression plan level throughout the whole power system based on an electricity daily load curve for each consumer.

摘要翻译： 电力需求/供应管理服务器（10）从消费电力操作装置（2）获得定义约束内容到舒适性和电费单的信息。 电力需求/供应管理服务器（10）的个人消费者控制优化单元基于作为用于评估舒适度和电力的气压计的成本评估值的模拟结果来计算具有最低成本评估值的电气设备的控制内容 票据过多，并将计算出的控制内容发送给消费者电力操作装置（2）。 此外，电力需求/供应管理服务器（10）的整体消费者优化单元计算最适合的电力单位计费，其基于每个电力日负荷曲线确保整个电力系统中的必要的需求抑制计划水平 消费者。

公开(公告)号：US08030109B2

公开(公告)日：2011-10-04

申请号：US12540609

申请日：2009-08-13

申请人： Yasuo Sato ,  Jugo Mitomo ,  Mikihiro Yokozeki ,  Tomonori Hino ,  Hironobu Narui

发明人： Yasuo Sato ,  Jugo Mitomo ,  Mikihiro Yokozeki ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/3235 ,  H01S5/343

摘要： A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×1019 cm−3 or less, and the impurity concentration of aluminum in the active layer is 1×1018 cm−3 or less. Thereby, the operating current is inhibited from increasing, and a long life can be realized.

摘要翻译： 能够实现长寿命的半导体发光元件及其制造方法。 活性层中的氢的杂质浓度为3×10 19 cm -3以下，活性层中的铝的杂质浓度为1×1018cm -3以下。 由此，能够抑制工作电流的增加，能够实现长寿命化。

公开(公告)号：US07222102B2

公开(公告)日：2007-05-22

申请号：US10101445

申请日：2002-03-20

申请人： Yasuo Sato ,  Chihiro Fukui ,  Hideaki Suzuki

发明人： Yasuo Sato ,  Chihiro Fukui ,  Hideaki Suzuki

IPC分类号： G06Q90/00

CPC分类号： G06Q30/02 ,  G06Q20/382 ,  H04L29/06 ,  H04L67/12 ,  H04L67/22 ,  H04L67/306 ,  H04L69/329

摘要： A portal site for serving data monitored and observed, which can not only act for monitoring and observing services, instead of a facility owner, but also process the data into economically valuable data with the use of the result of monitoring and observation, is connected to a computer network so as to gather sequential data which is observed in time series by a not less than one sensor as to an operation running condition of a facility belonging the facility owner, and event data monitored invariantly, and incorporates a function of obtaining a data disclosure profile for designating a degree of disclosure of the data, from the facility owner, and a function of onerously serving an item of secondary data obtained by processing the data in a range satisfying the data disclosure profile, to a data user different from the facility owner.

公开(公告)号：US07199496B2

公开(公告)日：2007-04-03

申请号：US11037858

申请日：2005-01-18

申请人： Seiki Suzuki ,  Yasuo Sato ,  Akihiko Hoda ,  Chikara Sugawara ,  Yoshinari Araki ,  Eiji Oi ,  Hung D. Vu

发明人： Seiki Suzuki ,  Yasuo Sato ,  Akihiko Hoda ,  Chikara Sugawara ,  Yoshinari Araki ,  Eiji Oi ,  Hung D. Vu

IPC分类号： H02K11/00 ,  H02K1/23 ,  H02K9/00 ,  H02K3/24 ,  H02K5/00

CPC分类号： H02K11/33

摘要： The heat-generating components of an integrated motor system are disposed proximate the motor body, for efficient heat dissipation, and the heat-sensitive components are segregated therefrom, physically and thermally.

摘要翻译： 集成电动机系统的发热部件设置在电动机主体附近，用于有效散热，并且热敏部件在物理和热学上与其分离。

公开(公告)号：US07197378B2

公开(公告)日：2007-03-27

申请号：US10645483

申请日：2003-08-22

申请人： Yasuo Sato ,  Masahiro Watanabe ,  Kenji Ogawa

发明人： Yasuo Sato ,  Masahiro Watanabe ,  Kenji Ogawa

IPC分类号： G05D17/00 ,  G01R21/133

CPC分类号： H02J3/38 ,  G06Q50/06 ,  H02J3/008 ,  H02J13/0013 ,  Y02E40/72 ,  Y02E60/7807 ,  Y04S10/12 ,  Y04S40/12 ,  Y04S50/10 ,  Y10T307/25

摘要： A coordination controller prevents the deterioration of electric power quality in an electric power system, such as in terms of voltage values, that can be caused when distributed power resources connected in parallel to the electric power system are operated without restrictions. A distributed power resource 103 includes means 112 for communicating with the outside of an electric power facility, means 116 for monitoring the current time, means 115 for synchronizing with the outside time, means 112 for receiving a control schedule for an electric power-consuming apparatus or electric power generating apparatus, and a coordination controller 101 for implementing the control schedule according to the time obtained by the time monitoring means 116.

摘要翻译： 协调控制器防止电力系统中的电力质量的劣化，例如在电力系统并联连接的分布式电力资源无限制地运行时可能导致的电压值的变化。 分布式电力资源103包括用于与电力设施的外部通信的装置112，用于监视当前时间的装置116，用于与外部时间同步的装置115，用于接收电力消耗装置的控制计划的装置112 或发电装置，以及用于根据由时间监视装置116获得的时间来实现控制进度的协调控制器101。