THERMALLY TUNABLE OPTOELECTRONIC MODULES
    5.
    发明申请

    公开(公告)号:US20180129013A1

    公开(公告)日:2018-05-10

    申请号:US15805213

    申请日:2017-11-07

    Abstract: A thermally tunable optoelectronic module includes a light emitting assembly operable to emit light of a particular wavelength or range of wavelengths. The light emitting assembly is disposed to a temperature-dependent wavelength shift. The thermally tunable optoelectronic module further includes an optical assembly aligned to the light emitting assembly, and separated from the light emitting assembly by an alignment distance. The thermally tunable optoelectronic module further includes a thermally tunable spacer disposed between the optical assembly and the light-emitting assembly, the thermally tunable spacer is operable to counteract the temperature-dependent wavelength shift.

    OPTOELECTRONIC MODULES OPERABLE TO COLLECT SPECTRAL DATA AND DISTANCE DATA

    公开(公告)号:US20180301498A1

    公开(公告)日:2018-10-18

    申请号:US15766103

    申请日:2016-09-22

    Abstract: Optoelectronic modules operable to collect distance data and spectral data include demodulation pixels operable to collect spectral data and distance data via a time-of flight approach. The demodulation pixels include regions with varying charge-carrier mobilities. Multi-wavelength electromagnetic radiation incident on the demodulation pixels are separated into different portions wherein the respective portions are used to determine the composition of the incident multi-wavelength electromagnetic radiation. Accordingly, the optoelectronic module is used, for example, to collect colour images and 3D images, and/or ambient light levels and distance data. The demodulation pixels comprise contact nodes that generate potential regions that vary in magnitude with the lateral dimension of the semiconductor substrate. The potential regions conduct the photo-generated charges from the photo-sensitive detection region to a charge-collection region. The photo-generated charges are conducted to the charge-collection region with respective drift velocities that vary in magnitude with the thickness of the semiconductor substrate.

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