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公开(公告)号：US11715491B2
公开(公告)日：2023-08-01
申请号：US17364300
申请日：2021-06-30
Applicant: Headway Technologies, Inc.
Inventor： Tom Zhong , Hiroshi Omine , Jianing Zhou , Kunliang Zhang , Ruhang Ding , Min Li
CPC classification number: G11B5/484 , G11B5/3163
Abstract: Methods of critical dimension (CD) uniformity control for magnetic head devices are disclosed. In some embodiments, a method can include providing a film stack, the film stack including a substrate, a magnetoresistive (MR) sensor layer, and a hard mask layer, patterning the hard mask layer using a first mask that defines critical shape patterns other than the CD, forming a mandrel pattern using a second mask that defines the CD, and forming a sidewall spacer pattern on sidewalls of the mandrel pattern, and removing the mandrel pattern.
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公开(公告)号：US20230005500A1
公开(公告)日：2023-01-05
申请号：US17364300
申请日：2021-06-30
Applicant: Headway Technologies, Inc.
Inventor： Tom Zhong , Hiroshi Omine , Jianing Zhou , Kunliang Zhang , Ruhang Ding , Min Li
Abstract: Methods of critical dimension (CD) uniformity control for magnetic head devices are disclosed. In some embodiments, a method can include providing a film stack, the film stack including a substrate, a magnetoresistive (MR) sensor layer, and a hard mask layer, patterning the hard mask layer using a first mask that defines critical shape patterns other than the CD, forming a mandrel pattern using a second mask that defines the CD, and forming a sidewall spacer pattern on sidewalls of the mandrel pattern, and removing the mandrel pattern.
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公开(公告)号：US11380355B2
公开(公告)日：2022-07-05
申请号：US17081235
申请日：2020-10-27
Applicant: Headway Technologies, Inc.
Inventor： Glen Garfunkel , Yan Wu , Wenyu Chen , Kunliang Zhang , Min Li , Shohei Kawasaki
Abstract: A read head includes a permanent magnet (PM) layer formed up to 100 nm behind a free layer where PM layer magnetization may be initialized in a direction that adjusts free layer (FL) bias point, and shifts sensor asymmetry (Asym) closer to 0% for individual heads at slider or Head Gimbal Assembly level to provide a significant improvement in device yield. Asym is adjusted using different initialization schemes and initialization directions. With individual heads, initialization direction is selected based on a prior measurement of asymmetry. The PM layer is CoPt or CoCrPt and has coercivity from 500 Oersted to 1000 Oersted. The PM layer may have a width equal to the FL, or a width equal to the cross-track distance between outer sides of the longitudinal bias layers. In another embodiment, the PM layer adjoins a backside of the top shield.
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公开(公告)号：US10950257B2
公开(公告)日：2021-03-16
申请号：US16190790
申请日：2018-11-14
Applicant: Headway Technologies, Inc.
Inventor： Yuhui Tang , Ying Liu , Min Li
Abstract: A method of forming a spin torque assisted magnetic recording writer is disclosed wherein a spin flipping (STO) device is recessed from an air bearing surface. The STO device has a middle flux guiding layer with a magnetization that flips to a direction anti-parallel to the write gap field when a current of sufficient magnitude is applied from the trailing shield towards the main pole (MP) thereby increasing reluctance in the write gap to enhance writability. A STO stack is deposited and patterned to define a cross-track width on the MP tapered trailing side. Thereafter, the STO stack is patterned to define a STO device with a front side recessed from the air bearing surface, and a backside. A write gap is deposited surrounding the STO device, and has a thickness greater than or ≤ to STO thickness to enable design flexibility. Then, first and second trailing shields are formed.
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公开(公告)号：US09484049B2
公开(公告)日：2016-11-01
申请号：US14297698
申请日：2014-06-06
Applicant: Headway Technologies, Inc.
Inventor： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
CPC classification number: G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/33 , G11B5/3929 , G11B2005/3996 , Y10T428/1114
Abstract: A TMR sensor with a free layer having a FL1/FL2/FL3 configuration is disclosed in which FL1 is FeCo or a FeCo alloy with a thickness between 2 and 15 Angstroms. The FL2 layer is made of CoFeB or a CoFeB alloy having a thickness from 2 to 10 Angstroms. The FL3 layer is from 10 to 100 Angstroms thick and has a negative λ to offset the positive λ from FL1 and FL2 layers and is comprised of CoB or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, and Si. Alternatively, the FL3 layer may be a composite such as CoB/CoFe, (CoB/CoFe)n where n is ≧2 or (CoB/CoFe)m/CoB where m is ≧1. The free layer described herein affords a high TMR ratio above 60% while achieving low values for λ (
Abstract translation: 公开了具有FL1 / FL2 / FL3结构的自由层的TMR传感器，其中FL1是FeCo或厚度在2和15埃之间的FeCo合金。 FL2层由厚度为2〜10埃的CoFeB或CoFeB合金制成。 FL3层的厚度为10〜100埃，并且具有负λ以从FL1和FL2层偏移正的λ，由CoB或CoBQ合金组成，其中Q是Ni，Mn，Tb，W，Hf，Zr ，Nb和Si。 或者，FL3层可以是其中n为≥2的CoB / CoFe（CoB / CoFe）n或（CoB / CoFe）m / CoB（其中m为≥1）的复合物。 此处描述的自由层提供高于60％的高TMR比，同时实现λ（<5×10-6），RA（1.5欧姆/μm2）和Hc（<6Oe）的低值。
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Patent Agency Ranking
公开(公告)号：US09437225B2
公开(公告)日：2016-09-06
申请号：US14445167
申请日：2014-07-29
Applicant: Headway Technologies, Inc.
Inventor： Junjie Quan , Kunliang Zhang , Min Li , Ruhang Ding , Yewhee Chye , Glen Garfunkel , Wenyu Chen
CPC classification number: G11B5/3912 , G11B5/127 , G11B5/3909 , G11B5/3929 , G11B2005/3996
Abstract: A MR sensor is disclosed with an antiferromagnetic (AFM) layer recessed behind a first stack of layers including a free layer and non-magnetic spacer to reduce reader shield spacing and enable increased areal density. The AFM layer may be formed on a first pinned layer in the first stack that is partially embedded in a second pinned layer having a front portion at an air bearing surface (ABS) to improve pinning strength and avoid a morphology effect. In another embodiment, the AFM layer is embedded in a bottom shield and surrounds the sidewalls and back side of an overlying free layer in the sensor stack to reduce reader shield spacing. Pinning strength is improved because of increased contact between the AFM layer and a pinned layer. The free layer is aligned above a bottom shield center section.
Abstract translation: 公开了一种MR传感器，其具有在包括自由层和非磁性间隔物的第一层叠层之后凹入的反铁磁（AFM）层，以减少读取器屏蔽间隔并且实现增加的面密度。 AFM层可以形成在第一堆叠中的第一被钉扎层上，其部分地嵌入在空气轴承表面（ABS）处具有前部的第二钉扎层中，以改善钉扎强度并避免形态效应。 在另一个实施例中，AFM层被嵌入底部屏蔽并且围绕传感器堆叠中的上覆自由层的侧壁和背面，以减少读取器屏蔽间隔。 由于AFM层和被钉扎层之间的接触增加，固定强度得到改善。 自由层在底部屏蔽中心部分上方对准。
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公开(公告)号：US09336799B2
公开(公告)日：2016-05-10
申请号：US14048080
申请日：2013-10-08
Applicant: Headway Technologies, Inc.
Inventor： Tai Min , Yuhui Tang , Lijie Guan , Min Li
CPC classification number: G11B5/232 , G11B5/1278 , G11B5/235 , G11B5/3116 , H01F10/3272 , Y10T428/1186
Abstract: A perpendicular magnetic recording (PMR) head is fabricated with main pole and a trailing edge shield antiferromagnetically coupled across a write gap by either having the write gap layer formed as a synthetic antiferromagnetic tri-layer (SAF) or formed as a monolithic layer of antiferromagnetic material. The coupling improves the write performance of the writer by enhancing the perpendicular component of the write field and its gradient. Methods of fabricating the writer are provided.
Abstract translation: 制造垂直磁记录（PMR）头，其主磁极和后沿屏蔽通过将写间隙层形成为合成反铁磁三层（SAF）或形成为反铁磁性的单片层，反写磁耦合跨写写间隙 材料。 耦合通过增强写入场的垂直分量及其梯度来提高写入器的写入性能。 提供了作者的制作方法。
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公开(公告)号：US20150248902A1
公开(公告)日：2015-09-03
申请号：US14712942
申请日：2015-05-15
Applicant: Headway Technologies, Inc.
Inventor： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
IPC: G11B5/39
CPC classification number: H01L43/12 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
Abstract: A TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, CoBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. One embodiment is represented by (NBC/BC)n where n≧2. A second embodiment is represented by (NBC/BC)n/NBC where n≧1. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is
Abstract translation: 一种TMR传感器，其包括具有由CoFeB，CoFeBM，CoB，CoBM或CoBLM制成的至少一个含B（BC）层和由CoFe，CoFeM制成的多个非B含（NBC）层的自由层， 或CoFeLM，其中L和M是Ni，Ta，Ti，W，Zr，Hf，Tb或Nb之一。 一个实施例由（NBC / BC）n表示，其中n≥2。 第二实施例由（NBC / BC）n / NBC表示，其中n≥1。 在每个实施例中，NBC层接触隧道势垒，并且各自具有2至8埃厚度的NBC层以与10至80埃厚的BC层交替地形成。 总自由层厚度<100埃。 这里描述的自由层配置能够在实现高TMR比，低磁致伸缩，低RA和低Hc值的同时实现显着的降噪（SNR增强）。
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公开(公告)号：US09123886B2
公开(公告)日：2015-09-01
申请号：US13785255
申请日：2013-03-05
Applicant: Headway Technologies, Inc.
Inventor： Kunliang Zhang , Min Li , Junjie Quan , Yewhee Chye
CPC classification number: H01L43/12 , G01R33/0076 , G01R33/025 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/3932
Abstract: A wrap around shield structure is disclosed for biasing a free layer in a sensor and includes a bottom shield, side shields, and top shield in which each shield element comprises a high moment layer with a magnetization saturation greater than that of Ni70Fe30. The high moment layers provide a better micro read width performance. Side shield structure includes a stack of antiferromagnetically (AFM) coupled magnetic layers on a second high moment layer. A first (lower) magnetic layer in each side shield is ferromagnetically coupled to the second high moment layer, and to a first high moment layer in the bottom shield. A third (upper) magnetic layer in each side shield is ferromagnetically coupled to a third high moment layer in the top shield for improved stabilization. Sensor sidewalls may terminate at a top surface of a reference layer to decrease reader shield spacing.
Abstract translation: 公开了一种用于偏置传感器中的自由层的环绕屏蔽结构，并且包括底部屏蔽，侧面屏蔽和顶部屏蔽，其中每个屏蔽元件包括磁化饱和度大于Ni70Fe30的高磁矩层。 高矩阵层提供更好的微读宽度性能。 侧屏蔽结构包括在第二高力矩层上的反铁磁（AFM）耦合磁层的堆叠。 每个侧屏蔽件中的第一（下）磁性层被铁磁耦合到第二高力矩层，并且与底部屏蔽件中的第一高力矩层结合。 每个侧屏中的第三（上）磁性层被铁磁耦合到顶部屏蔽中的第三高力矩层，以改善稳定性。 传感器侧壁可以终止于参考层的顶表面，以降低阅读器屏蔽间隔。
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公开(公告)号：US20140252518A1
公开(公告)日：2014-09-11
申请号：US13785255
申请日：2013-03-05
Applicant: HEADWAY TECHNOLOGIES, INC.
Inventor： Kunliang Zhang , Min Li , Junjie Quan , Yewhee Chye
CPC classification number: H01L43/12 , G01R33/0076 , G01R33/025 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/3932
Abstract: A wrap around shield structure is disclosed for biasing a free layer in a sensor and includes a bottom shield, side shields, and top shield in which each shield element comprises a high moment layer with a magnetization saturation greater than that of Ni70Fe30. The high moment layers provide a better micro read width performance. Side shield structure includes a stack of antiferromagnetically (AFM) coupled magnetic layers on a second high moment layer. A first (lower) magnetic layer in each side shield is ferromagnetically coupled to the second high moment layer, and to a first high moment layer in the bottom shield. A third (upper) magnetic layer in each side shield is ferromagnetically coupled to a third high moment layer in the top shield for improved stabilization. Sensor sidewalls may terminate at a top surface of a reference layer to decrease reader shield spacing.
Abstract translation: 公开了一种用于偏置传感器中的自由层的环绕屏蔽结构，并且包括底部屏蔽，侧面屏蔽和顶部屏蔽，其中每个屏蔽元件包括磁化饱和度大于Ni70Fe30的高磁矩层。 高矩阵层提供更好的微读宽度性能。 侧屏蔽结构包括在第二高力矩层上的反铁磁（AFM）耦合磁层的堆叠。 每个侧屏蔽件中的第一（下）磁性层被铁磁耦合到第二高力矩层，并且与底部屏蔽件中的第一高力矩层结合。 每个侧屏中的第三（上）磁性层被铁磁耦合到顶部屏蔽中的第三高力矩层，以改善稳定性。 传感器侧壁可以终止于参考层的顶表面，以降低阅读器屏蔽间隔。
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