公开(公告)号：US08299566B2

公开(公告)日：2012-10-30

申请号：US12188236

申请日：2008-08-08

申请人： Hanyi Ding ,  Alvin Jose Joseph ,  Anthony Kendall Stamper

发明人： Hanyi Ding ,  Alvin Jose Joseph ,  Anthony Kendall Stamper

IPC分类号： H01L23/48 ,  H01L21/763

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/481 ,  H01L23/66 ,  H01L24/05 ,  H01L24/10 ,  H01L24/12 ,  H01L24/13 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2223/6616 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/2518 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of forming and structure for through wafer vias and signal transmission lines formed of through wafer vias. The method of forming through wafer vias includes forming an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via through a semiconductor substrate having a top surface and an opposite bottom surface, each through wafer via of the array of through wafer vias extending from the top surface of the substrate to the bottom surface of the substrate.

摘要翻译： 用于通过晶片通孔形成和结构的方法，所述晶片通孔和通过晶片通孔形成的信号传输线。 通过晶片通孔形成的方法包括通过半导体衬底形成贯穿晶片通孔的阵列，其包括至少一个导电晶片通孔和至少一个不导电的晶片通孔，该半导体衬底具有顶表面和相对的底表面 通过晶片通孔从衬底的顶表面延伸到衬底的底表面的通过晶片通孔的阵列。

公开(公告)号：US20100032811A1

公开(公告)日：2010-02-11

申请号：US12188241

申请日：2008-08-08

申请人： Hanyi Ding ,  Alvin Jose Joseph ,  Anthony Kendall Stamper

发明人： Hanyi Ding ,  Alvin Jose Joseph ,  Anthony Kendall Stamper

IPC分类号： H01L21/768 ,  H01L23/538

CPC分类号： H01L21/76802 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/481 ,  H01L24/05 ,  H01L24/10 ,  H01L24/12 ,  H01L24/13 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/2518 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of forming and structure for through wafer vias and signal transmission lines formed of through wafer vias. The structure includes, a semiconductor substrate having a top surface and an opposite bottom surface; and an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via, each through wafer via of the array of through wafer vias extending from the top surface of to the bottom surface of the substrate, the at least one electrically conductive via electrically isolated from the substrate.

摘要翻译： 用于通过晶片通孔形成和结构的方法，所述晶片通孔和通过晶片通孔形成的信号传输线。 该结构包括：具有顶表面和相对底表面的半导体衬底; 以及贯穿晶片通孔的阵列，其包括至少一个导电的通过晶片通孔和至少一个非导电的通过晶片通孔，每个通过晶片通孔的通过晶片通孔的阵列从顶表面延伸到底表面 所述衬底，所述至少一个导电通孔与所述衬底电隔离。

公开(公告)号：US08384224B2

公开(公告)日：2013-02-26

申请号：US12188241

申请日：2008-08-08

申请人： Hanyi Ding ,  Alvin Jose Joseph ,  Anthony Kendall Stamper

发明人： Hanyi Ding ,  Alvin Jose Joseph ,  Anthony Kendall Stamper

IPC分类号： H01L29/40

CPC分类号： H01L21/76802 ,  H01L21/6835 ,  H01L21/76898 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/481 ,  H01L24/05 ,  H01L24/10 ,  H01L24/12 ,  H01L24/13 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/2518 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of forming and structure for through wafer vias and signal transmission lines formed of through wafer vias. The structure includes, a semiconductor substrate having a top surface and an opposite bottom surface; and an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via, each through wafer via of the array of through wafer vias extending from the top surface of to the bottom surface of the substrate, the at least one electrically conductive via electrically isolated from the substrate.

摘要翻译： 用于通过晶片通孔形成和结构的方法，所述晶片通孔和通过晶片通孔形成的信号传输线。 该结构包括：具有顶表面和相对底表面的半导体衬底; 以及贯穿晶片通孔的阵列，其包括至少一个导电的通过晶片通孔和至少一个非导电的通过晶片通孔，每个通过晶片通孔的通过晶片通孔的阵列从顶表面延伸到底表面 所述衬底，所述至少一个导电通孔与所述衬底电隔离。

公开(公告)号：US20100032808A1

公开(公告)日：2010-02-11

申请号：US12188229

申请日：2008-08-08

申请人： Hanyi Ding ,  Alvin Jose Joseph ,  Anthony Kendall Stamper

发明人： Hanyi Ding ,  Alvin Jose Joseph ,  Anthony Kendall Stamper

IPC分类号： H01L21/768 ,  H01L23/538

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/481 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/0405 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/11002 ,  H01L2224/11003 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01068 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00

摘要： A through wafer via structure. The structure includes: a semiconductor substrate having a top surface and an opposite bottom surface; and an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via, each through wafer via of the array of through wafer vias extending from the top surface of the substrate to between greater than halfway to and all the way to the bottom surface of the substrate. Also methods for fabricating the though wafer via structure.

摘要翻译： 通过晶片通孔结构。 该结构包括：具有顶表面和相对底表面的半导体衬底; 以及贯穿晶片通孔的阵列，其包括至少一个导电的通过晶片通孔和至少一个非导电的通过晶片通孔，每个通过晶片通孔的通过晶片通孔的阵列从基板的顶表面延伸到更大的 比一半到一路到底层的底面。 也是用于制造晶片通孔结构的方法。

公开(公告)号：US20120329219A1

公开(公告)日：2012-12-27

申请号：US13604731

申请日：2012-09-06

申请人： Hanyi Ding ,  Alvin Jose Joseph ,  Anthony Kendall Stamper

发明人： Hanyi Ding ,  Alvin Jose Joseph ,  Anthony Kendall Stamper

IPC分类号： H01L21/768 ,  H01L21/336 ,  H01L21/02 ,  H01L21/762

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/481 ,  H01L23/66 ,  H01L24/05 ,  H01L24/10 ,  H01L24/12 ,  H01L24/13 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2223/6616 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/2518 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of forming and structure for through wafer vias and signal transmission lines formed of through wafer vias. The method of forming through wafer vias includes forming an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via through a semiconductor substrate having a top surface and an opposite bottom surface, each through wafer via of the array of through wafer vias extending from the top surface of the substrate to the bottom surface of the substrate.

摘要翻译： 用于通过晶片通孔形成和结构的方法，所述晶片通孔和通过晶片通孔形成的信号传输线。 通过晶片通孔形成的方法包括通过半导体衬底形成贯穿晶片通孔的阵列，其包括至少一个导电晶片通孔和至少一个不导电的晶片通孔，该半导体衬底具有顶表面和相对的底表面 通过晶片通孔从衬底的顶表面延伸到衬底的底表面的通过晶片通孔的阵列。

公开(公告)号：US08035198B2

公开(公告)日：2011-10-11

申请号：US12188229

申请日：2008-08-08

申请人： Hanyi Ding ,  Alvin Jose Joseph ,  Anthony Kendall Stamper

发明人： Hanyi Ding ,  Alvin Jose Joseph ,  Anthony Kendall Stamper

IPC分类号： H01L21/768 ,  H01L23/538

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/481 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/0405 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/11002 ,  H01L2224/11003 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01068 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00

摘要： A through wafer via structure. The structure includes: a semiconductor substrate having a top surface and an opposite bottom surface; and an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via, each through wafer via of the array of through wafer vias extending from the top surface of the substrate to between greater than halfway to and all the way to the bottom surface of the substrate. Also methods for fabricating the though wafer via structure.

摘要翻译： 通过晶片通孔结构。 该结构包括：具有顶表面和相对底表面的半导体衬底; 以及贯穿晶片通孔的阵列，其包括至少一个导电的通过晶片通孔和至少一个非导电的通过晶片通孔，每个通过晶片通孔的通过晶片通孔的阵列从基板的顶表面延伸到更大的 比一半到一路到底层的底面。 也是用于制造晶片通孔结构的方法。

公开(公告)号：US20100032810A1

公开(公告)日：2010-02-11

申请号：US12188236

申请日：2008-08-08

申请人： Hanyi Ding ,  Alvin Jose Joseph ,  Anthony Kendall Stamper

发明人： Hanyi Ding ,  Alvin Jose Joseph ,  Anthony Kendall Stamper

IPC分类号： H01L23/538 ,  H01L21/768

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/481 ,  H01L23/66 ,  H01L24/05 ,  H01L24/10 ,  H01L24/12 ,  H01L24/13 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2223/6616 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/2518 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of forming and structure for through wafer vias and signal transmission lines formed of through wafer vias. The method of forming through wafer vias includes forming an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via through a semiconductor substrate having a top surface and an opposite bottom surface, each through wafer via of the array of through wafer vias extending from the top surface of the substrate to the bottom surface of the substrate.

摘要翻译： 用于通过晶片通孔形成和结构的方法，所述晶片通孔和通过晶片通孔形成的信号传输线。 通过晶片通孔形成的方法包括通过半导体衬底形成贯穿晶片通孔的阵列，其包括至少一个导电晶片通孔和至少一个不导电的晶片通孔，该半导体衬底具有顶表面和相对的底表面 通过晶片通孔从衬底的顶表面延伸到衬底的底表面的通过晶片通孔的阵列。

公开(公告)号：US08518787B2

公开(公告)日：2013-08-27

申请号：US13604731

申请日：2012-09-06

申请人： Hanyi Ding ,  Alvin Jose Joseph ,  Anthony Kendall Stamper

发明人： Hanyi Ding ,  Alvin Jose Joseph ,  Anthony Kendall Stamper

IPC分类号： H01L21/763

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/481 ,  H01L23/66 ,  H01L24/05 ,  H01L24/10 ,  H01L24/12 ,  H01L24/13 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2223/6616 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/2518 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of forming and structure for through wafer vias and signal transmission lines formed of through wafer vias. The method of forming through wafer vias includes forming an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via through a semiconductor substrate having a top surface and an opposite bottom surface, each through wafer via of the array of through wafer vias extending from the top surface of the substrate to the bottom surface of the substrate.

摘要翻译： 用于通过晶片通孔形成和结构的方法，所述晶片通孔和通过晶片通孔形成的信号传输线。 通过晶片通孔形成的方法包括通过半导体衬底形成贯穿晶片通孔的阵列，其包括至少一个导电晶片通孔和至少一个不导电的晶片通孔，该半导体衬底具有顶表面和相对的底表面 通过晶片通孔从衬底的顶表面延伸到衬底的底表面的通过晶片通孔的阵列。

公开(公告)号：US08592876B2

公开(公告)日：2013-11-26

申请号：US13342689

申请日：2012-01-03

申请人： Hanyi Ding ,  Qizhi Liu ,  Anthony K. Stamper

发明人： Hanyi Ding ,  Qizhi Liu ,  Anthony K. Stamper

IPC分类号： H01L29/80

CPC分类号： H01H1/0036 ,  B81B7/0006 ,  B81B2201/016 ,  G06F17/5063 ,  G06F17/5068 ,  H01P1/127

摘要： A micro-electro-mechanical system (MEMS), methods of forming the MEMS and design structures are provided. The method comprises forming a coplanar waveguide (CPW) comprising a signal electrode and a pair of electrodes on a substrate. The method comprises forming a first sacrificial material over the CPW, and a wiring layer over the first sacrificial material and above the CPW. The method comprises forming a second sacrificial material layer over the wiring layer, and forming insulator material about the first sacrificial material and the second sacrificial material. The method comprises forming at least one vent hole in the insulator material to expose portions of the second sacrificial material, and removing the first and second sacrificial material through the vent hole to form a cavity structure about the wiring layer and which exposes the signal line and pair of electrodes below the wiring layer. The vent hole is sealed with sealing material.

摘要翻译： 提供了微机电系统（MEMS），形成MEMS和设计结构的方法。 该方法包括在衬底上形成包括信号电极和一对电极的共面波导（CPW）。 该方法包括在CPW上形成第一牺牲材料，以及在第一牺牲材料上方和CPW上方的布线层。 该方法包括在布线层上形成第二牺牲材料层，以及围绕第一牺牲材料和第二牺牲材料形成绝缘体材料。 该方法包括在绝缘体材料中形成至少一个通气孔以暴露第二牺牲材料的部分，以及通过通气孔去除第一和第二牺牲材料，以形成围绕布线层的空腔结构，并使信号线和 一对电极在布线层下方。 通气孔用密封材料密封。

公开(公告)号：US08436446B2

公开(公告)日：2013-05-07

申请号：US13455725

申请日：2012-04-25

申请人： Hanyi Ding ,  Alvin J. Joseph ,  Wayne H. Woods, Jr.

发明人： Hanyi Ding ,  Alvin J. Joseph ,  Wayne H. Woods, Jr.

IPC分类号： H01L27/08

CPC分类号： G06F17/5077 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01P5/16 ,  H01P11/007 ,  H01L2924/00

摘要： A method, structure, and design structure for a through-silicon-via Wilkinson power divider. A method includes: forming an input on a first side of a substrate; forming a first leg comprising a first through-silicon-via formed in the substrate, wherein the first leg electrically connects the input and a first output; forming a second leg comprising a second through-silicon-via formed in the substrate, wherein the second leg electrically connects the input and a second output, and forming a resistor electrically connected between the first output and the second output.