公开(公告)号：US10438771B2

公开(公告)日：2019-10-08

申请号：US15273523

申请日：2016-09-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Michio Hatano ,  Yoshinori Nakayama ,  Masaru Matsuzaki ,  Hiroki Kawada ,  Yoshinori Momonoi ,  Zhigang Wang

IPC: H01J37/26 ,  H01J37/28

Abstract: Provided is a measurement device including: an irradiation optical system which emits a primary charged quantum beam to a sample for scanning; a detector which detects secondary charged particles generated from the sample; and a signal processing unit which processes an output signal from the secondary charged particle detector which has detected the secondary charged particles, in which the signal processing unit includes a measurement unit which measures widths of a first pattern group calibrated with a well-known first dimension and a second pattern group calibrated with a well-known second dimension, and an operation unit which defines a relationship between the well-known dimensions of the first and second pattern groups and length measurement values of the first and second pattern groups as a function. Accordingly, it is possible to control device performance with high accuracy, by controlling a device state so that the measured value described above is within an acceptable range by comparing to a predetermined value provided in advance.

公开(公告)号：US10665424B2

公开(公告)日：2020-05-26

申请号：US16046461

申请日：2018-07-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroki Kawada ,  Takahiro Kawasaki ,  Junichi Kakuta

IPC: H01J37/28 ,  H01L21/67 ,  H01L21/66 ,  G06T7/00 ,  G03F7/20 ,  G06T7/13

Abstract: A pattern measuring method and a pattern measuring apparatus that efficiently prevent a measurement error inherent to a device that performs beam scanning in a specific direction such as a scanning electron microscope are provided. The invention is directed to a pattern measuring method and a pattern measuring apparatus in which a first curve with respect to an edge of one side and a second curve with respect to an edge of the other side are obtained by calculating a first power spectral density with respect to the edge of one side of a pattern and a second power spectral density with respect to the edge of the other side of the pattern based upon a signal that is obtained when a charged particle beam is scanned in a direction intersecting the edge of the pattern; a difference value between the first curve and the second curve is calculated; and one of the first curve and the second curve is corrected by using the difference value.

公开(公告)号：US10002743B2

公开(公告)日：2018-06-19

申请号：US15305740

申请日：2015-04-21

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Shoji Hotta ,  Hiroki Kawada ,  Osamu Inoue

IPC: H01J37/28 ,  G03F9/00 ,  G01B15/04 ,  H01J37/22 ,  G03F7/20

CPC classification number: H01J37/28 ,  G01B15/04 ,  G03F7/70633 ,  G03F9/7061 ,  H01J37/22 ,  H01J2237/2803

Abstract: For scanning electron beams and measuring overlay misalignment between an upper layer pattern and a lower layer pattern with high precision, electron beams are scanned over a region including a first pattern and a second pattern of a sample, the sample having the lower layer pattern (the first pattern) and the upper layer pattern (the second pattern) formed in a step after a step of forming the first pattern. The electron beams are scanned such that scan directions and scan sequences of the electron beams become axial symmetrical or point-symmetrical in a plurality of pattern position measurement regions defined within the scan region for the electron beams, thereby reducing measurement errors resulting from the asymmetry of electric charge.

公开(公告)号：US20170138725A1

公开(公告)日：2017-05-18

申请号：US15322338

申请日：2015-05-11

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroki Kawada ,  Hideo Sakai ,  Katsuhiro Sasada

IPC: G01B15/00 ,  H01J37/22 ,  H01J37/28

CPC classification number: G01B15/00 ,  G01B15/04 ,  H01J37/222 ,  H01J37/28 ,  H01J37/317 ,  H01J2237/2817 ,  H01L22/12

Abstract: The presently disclosed subject matter provides a pattern measurement method and device for achieving highly accurate measurement in the depth direction of a pattern. The method involves a focused ion beam irradiated to form an inclined surface in a sample area; a field of view of a SEM set to include the boundary between the inclined surface and a sample surface; and an image of the field of view obtained on the basis of a detection signal. Such an acquired image is used to specify a first position, the boundary between inclined surface and non-inclined surface, and a second position, the position of a desired deep hole or deep groove positioned within the inclined surface. The pattern dimension in a height direction is determined on the basis of the distance in the sample surface direction between the first position and second position and the angle of the inclined surface.

公开(公告)号：US20170040230A1

公开(公告)日：2017-02-09

申请号：US15303813

申请日：2015-03-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Atsuko Yamaguchi ,  Osamu Inoue ,  Hiroki Kawada

IPC: H01L21/66 ,  H01J37/285 ,  H01J37/244 ,  H01L21/033

CPC classification number: H01L22/12 ,  H01J37/244 ,  H01J37/28 ,  H01J37/285 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2809 ,  H01J2237/2814 ,  H01J2237/2817 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L22/00

Abstract: Provided is a charged particle beam device which can specify a position of an initial core with high accuracy even when fine line and space patterns are formed by an SADP in plural times. The charged particle beam device includes a detector (810) which detects secondary charged particles discharged from a sample (807) when a charged particle beam is emitted to the sample having a plurality of patterns of line shape, a display unit (817) which displays image data of a surface of the sample on the basis of a signal of the secondary charged particles, a calculation unit (812) which calculates an LER value with respect to the plurality of the patterns of line shape from the image data, and a determination unit (816) which compares the values to determine a position of the initial core.

Abstract translation: 提供一种带电粒子束装置，即使在多次由SADP形成细线和空间图案时，也能够高精度地指定初始芯的位置。 带电粒子束装置包括：检测器（810），当检测器（810）将带电粒子束发射到具有多个线状图案的样品时，检测从样品（807）排出的二次带电粒子;显示单元（817），其显示 基于所述二次带电粒子的信号的所述样本的表面的图像数据，计算单元（812），其根据所述图像数据计算相对于所述多个线状图案的LER值，以及判定 单元（816），其比较该值以确定初始核心的位置。

公开(公告)号：US20150110406A1

公开(公告)日：2015-04-23

申请号：US14404499

申请日：2013-05-27

Applicant: Hitachi High-Technologies Corporation

Inventor： Takeyoshi Ohashi ,  Junichi Tanaka ,  Yutaka Hojo ,  Hiroyuki Shindo ,  Hiroki Kawada

IPC: G06K9/46

CPC classification number: G06K9/4604 ,  G06K9/4638 ,  G06K2209/19 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/24592 ,  H01J2237/2817

Abstract: An error of an outline point due to a brightness fluctuation cannot be corrected by a simple method such as a method of adding a certain amount of offset. However, in recent years as the miniaturization of the pattern represented by a resist pattern has progressed, it has been difficult to appropriately determine a region that serves as a reference. An outline of the resist pattern is extracted from an image of the resist pattern obtained by a charged particle beam apparatus in consideration of influence of the brightness fluctuation. That is, a plurality of brightness profiles in the vicinity of edge points configuring the outline are obtained and an evaluation value of a shape of the brightness profile in the vicinity of a specific edge is obtained based on the plurality of brightness profiles, and the outline of a specific edge point is corrected, based on the evaluation value.

Abstract translation: 由于亮度波动导致的轮廓点的误差不能通过添加一定量的偏移量的方法等简单的方法来校正。 然而，近年来，随着抗蚀剂图案表示的图案的小型化进行，难以适当地确定作为基准的区域。 考虑到亮度波动的影响，从由带电粒子束装置得到的抗蚀剂图案的图像中提取抗蚀剂图案的轮廓。 也就是说，获得构成轮廓的边缘点附近的多个亮度轮廓，并且基于多个亮度轮廓获得特定边缘附近的亮度轮廓的形状的评估值，并且轮廓 基于评估值来校正特定边缘点。

公开(公告)号：US10393509B2

公开(公告)日：2019-08-27

申请号：US15329504

申请日：2014-07-30

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroki Kawada ,  Katsuhiro Sasada ,  Takenori Hirose ,  Shou Takami

IPC: G01B15/00 ,  G01B11/06 ,  G01B15/02

Abstract: A pattern height measurement device capable of high-precision measurement of the dimensions of a fine pattern, and a charged particle beam device are provided. The pattern height measurement device includes a calculation device that determines dimensions of a sample, in the height direction, based on first reflected light information obtained by dispersing light reflected from a sample. The calculation device determines second reflected light information based on a formula for the relationship between the value for the dimension in the sample surface direction of a pattern formed upon the sample, obtained by irradiation of a charged particle beam on the sample, the value for the dimension in the height direction of the sample, and reflected light information; compares a second reflected light intensity and the first reflected light information; and outputs the value for the dimension in the height direction of the sample in the second reflected light information.

公开(公告)号：US10184790B2

公开(公告)日：2019-01-22

申请号：US15322338

申请日：2015-05-11

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroki Kawada ,  Hideo Sakai ,  Katsuhiro Sasada

IPC: G01B15/00 ,  H01J37/28 ,  H01J37/317 ,  H01J37/22 ,  G01B15/04 ,  H01L21/66

Abstract: The presently disclosed subject matter provides a pattern measurement method and device for achieving highly accurate measurement in the depth direction of a pattern. The method involves a focused ion beam irradiated to form an inclined surface in a sample area; a field of view of a SEM set to include the boundary between the inclined surface and a sample surface; and an image of the field of view obtained on the basis of a detection signal. Such an acquired image is used to specify a first position, the boundary between inclined surface and non-inclined surface, and a second position, the position of a desired deep hole or deep groove positioned within the inclined surface. The pattern dimension in a height direction is determined on the basis of the distance in the sample surface direction between the first position and second position and the angle of the inclined surface.

公开(公告)号：US20140246585A1

公开(公告)日：2014-09-04

申请号：US14349375

申请日：2012-09-27

Applicant: Hitachi High-Technologies Corporation

Inventor： Takeyoshi Ohashi ,  Junichi Tanaka ,  Tomoko Sekiguchi ,  Hiroki Kawada

IPC: H01J37/28

CPC classification number: H01J37/28 ,  G01B15/04 ,  G01B2210/56 ,  G01N23/22 ,  H01J2237/24578 ,  H01J2237/2817

Abstract: The objective of the invention is to provide a measuring method that can determine pattern contours and dimensions with high precision even if an object to be measured shrinks due to electron beam radiations. In order to achieve this objective, a method, which performs measurements by irradiating an electron beam onto a sample having a pattern formed on a primary coating thereof, prepares an SEM image and contour of the pattern (S201, S202), material parameters of the pattern part and primary coating part of the sample (S203, S204), and a beam condition in irradiating the electron beam onto the sample (S205), and uses these prepared things to calculate a pattern shape or dimensions before the irradiation of the electron beam (S206).

Abstract translation: 本发明的目的是提供一种能够以高精度确定图形轮廓和尺寸的测量方法，即使被测量物体由于电子束辐射而收缩。 为了实现该目的，通过将电子束照射到形成在其一次涂层上的图案的样品上进行测量的方法准备SEM图像和图案的轮廓（S201，S202），材料参数 样品的图案部分和初次涂布部分（S203，S204），以及将电子束照射到样品上的光束条件（S205），并且使用这些制备的物体来计算电子束照射之前的图案形状或尺寸 （S206）。

公开(公告)号：US10101150B2

公开(公告)日：2018-10-16

申请号：US15533489

申请日：2014-12-10

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroki Kawada ,  Muneyuki Fukuda ,  Yoshinori Momonoi ,  Shou Takami

IPC: H01J37/00 ,  G01B15/02 ,  H01J37/317

Abstract: The objective of the present invention is to provide a height measurement device capable of highly accurate measurement in the depth direction of a structure on a sample. To achieve this objective, proposed are a charged particle beam device and a height measurement device that is provided with a calculation device for determining the size of a structure on a sample on the basis of a detection signal obtained by irradiating the sample with a charged particle beam, wherein the calculation device calculates the distance from a first charged particle beam irradiation mark formed at a first height on the sample and a second charged particle beam irradiation mark formed at a second height on the sample and on the basis of this distance and the charged particle beam irradiation angle when the first charged particle beam irradiation mark and second charged particle beam irradiation mark were formed, calculates the distance between the first height and the second height.